The visual inspection of electronic parts consists of two steps: automatic visual inspection and verification inspection. In the stage of a verification inspection, the human inspector sequentially inspects all the areas which detected in the automatic inspection. In this study, we propose an algorithm to determine the order of verification inspection by Bayes inference well known in the field of machine learning. This is a method of prioritizing a region estimated to have a high probability of defect using experience data of past inspection. This algorithm was applied to the visual inspection of ultraviolet filters to verify its effectiveness. As a result of the comparison experiment, it was confirmed that the verification inspection can be completed 30% of the conventional method by adapting proposed algorithm.

$ISnO_2$ thin films were prepared on p-type and n-type Si substrates to research the interface characteristics between $SnO_2$ and substrate. After the annealing processes, the amorphous structure was formed at the interface to make a Schottky contact. The O 1s spectra showed the bond of 530.4 eV as an amorphous structure, and the Schottky contact. The analysis by the deconvoluted spectra was observed the drastic variation of oxygen vacancies at the amorphous structure because of the depletion layer is directly related to the oxygen vacancy. $SnO_2$ thin film changed the electrical properties depending on the characteristics of substrates. It was confirmed that it is useful to observe the Schottky contact's properties by complementary using the XPS analysis and I-V measurement.

In this study, we have studied the characteristics of the organic photodiode varying due to the blending conditions of the quantum dots (QDs). The active layer of the photodiode was formed with poly (3-hexylthiophene) and phenyl-C61-butyric acid methyl ester, and CdSe QDs with and without ZnS shell were blended in the active layer. The photodiode with CdSe/ZnS QDs showed the highest power conversion efficiency (PCE) and short-circuit current (Jsc). The performance change of the organic photodiode by X-ray irradiation was also measured. Regardless of X-ray irradiation conditions, the photodiode with CdSe/ZnS QDs showed better stability than other cases.

The cure properties of ethoxysilyl bisphenol A type epoxy resin (Ethoxysilyl-DGEBA) systems with different hardeners were investigated, comparing with DGEBA and Diallyl-DGEBA epoxy resin systems. The cure kinetics of these systems were analyzed by differential scanning calorimetry with an isothermal approach, and the kinetic parameters of all systems were reported in generalized kinetic equations with diffusion effects. The Ethoxysilyl-DGEBA epoxy resin system showed lower cure conversion rates than DGEBA and Diallyl-DGEBA epoxy resin systems. The conversion rates of these epoxy resin systems with DDM hardener are lower than those with HF-1M hardener. It can be considered that the optimum hardener for Ethoxysilyl-DGEBA epoxy resin system is Phenol Novolac type. These lower cure conversion rates in the Ethoxysilyl-DGEBA epoxy resin systems could be explained by the retardation of reaction molecule movements according to the formation of organic-inorganic hybrid network structure by epoxy and ethoxysilyl group in Ethoxysilyl- DGEBA epoxy resin system.

AZO/Ag/AZO multi-layer films deposited on glass substrate by RF magnetron sputtering and thermal evaporator have a much better electrical properties than Al-doped ZnO thin films. The multi-layer structure consisted of three layers, AZO/Ag/AZO, the electrical and optical properties of AZO/Ag/AZO were changed mainly by thickness of Ag layers. The optimum thickness of Ag layers was determined to be $90{\AA}$ for high optical transmittance and good electrical conductivity. The Ag layers thickness $90{\AA}$ is an optical transmittance greater than 80% of visible light and the obtained multilayer thin film with the low resistivity of $8.05{\times}10-3{\Omega}cm$ and the low sheet resistance $5.331{\Omega}/sq$. Applying to TCO and Solar electrode will improve efficiency.

This paper is about the analysis on the vibration characteristic of tooling units on the precision bed in high-speed automatic lathe for precision machining. An automatic lathe operating at about 25,000 RPM is a critical factor in the self-weight stress and deformation of the bed. Especially, the resonance frequency should be grasped in advance to prevent abnormal vibration that may occur during processing. If the wrong bed is used, the resonant frequency can have a fatal influence on the precision machining and increase the defective rate of precision machined parts such as semiconductor parts. In this paper, vibration characteristics were evaluated through static load and resonance frequency analysis of automatic lathe bed. As a result, the maximum stress was 0.14MPa, the maximum deformation amount was $17.9{\mu}m$, and the natural frequency was 364.72Hz. The resonance frequency was calculated as 718Hz, and the stability was confirmed by being in the range of 400Hz or more, which is the processing condition.

It was confirmed that the silicon thin films fabricated on the p-Si (100) substrates by using DIPAS (DiIsoPropylAminoSilane) and TDMA-Sb (Tris-DiMethylAminoAntimony) sources by RPCVD method were amorphous and n-type silicon. The fabricated amorphous n-type silicon films had electron carrier concentrations and electron mobilities ranged from $6.83{\times}10^{18}cm^{-3}$ to $1.27{\times}10^{19}cm^{-3}$ and from 62 to $89cm^2/V{\cdot}s$, respectively. The ideality factor of the pn junction diode fabricated on the p-Si (100) substrate was about 1.19 and the efficiency of the fabricated pn solar cell was 10.87%.

We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

In this paper, recent researches on new and renewable energy have been conducted due to problems such as energy exhaustion and environmental pollution, and new researches on high efficiency and high speed switching are needed. Therefore, we compared the efficiency by using high speed switching devices instead of IGBT which can't be used in high speed switching. The experiment was performed theoretically by applying the same parameters of the high speed switching devices which are the Cool MOS of Infineon Co., SiC C3M of Cree, and GaN FET device of Transform, by implementing the DC-DC boost converter and measuring the actual efficiency for output power and frequency. As a result, the GaN FET showed good efficiency at all switching frequency and output power.

The supercritical $CO_2$ (sc-$CO_2$) mixture and the sc-$CO_2$-based Photoresist(PR) stripping(SCPS) process were applied to the removal of the post etch/ash PR residue on aluminum patterned wafers and the results were observed by scanning of electron microscope(SEM). In the case of MDII wafers, the carbonized PR was able to be effectively removed without pre-stripping by oxygen plasma ashing by using sc-$CO_2$ mixture containing the optimum formulated additives at the proper pressure and temperature, and the same result was also able to be obtained in the case of HDII wafer. It was found that the efficiency of SCPS of ion implanted wafer improved as the temperature of SCPS was high, so a very large amount of MEA in the sc-$CO_2$ mixture could be reduced if the temperature could be increased at condition that a process permits, and the ion implanted photoresist(IIP) on the wafer was able to be removed completely without pre-treatment of plasma ashing by using the only 1 step SCPS process. By using SCPS process, PR polymers formed on sidewalls of metal conductive layers such as aluminum films, titanium and titanium nitride films by dry etching and ashing processes were removed effectively with the minimization of the corrosion of the metal conductive layers.

Recently, the interest and research on 360 camera and 360 image production are expanding. In this paper, we describe the feature extraction algorithm, alignment and image blending that make up the feature-based stitching system. And it deals with the theory of representative algorithm at each stage. In addition, the feature-based stitching system was implemented using OPENCV library. As a result of the implementation, the brightness of the two images is different, and it feels a sense of heterogeneity in the resulting image. We will study the proper preprocessing to adjust the brightness value to improve the accuracy and seamlessness of the feature-based stitching system.

In this paper, solution based Indium Zinc Oxide thin film transistors (IZO TFTs) were fabricated with PVP gate dielectric. To enhance the electrical properties, UV-O3 treatment is proposed on solution based IZO TFTs. The gate leakage current and interface trap density is compatible with conventional ZnO-based TFT with inorganic gate insulator. Especially, the UV-treated device shows improved electrical characteristics compared to the untreated device. These results can be explained by X-ray photoelectron spectroscopy (XPS) analysis, which shows that the oxygen vacancy of UV-O3 treatment is higher than that of no treatment.

Given two stereo images of a scene, it is possible to recover a 3D understanding of the scene. This is the primary way that the human visual system estimates depth. This process is useful in applications like robotics, where depth sensors may be expensive but a pair of cameras is relatively cheap. In this work, we combined our interests to implement a graph cut algorithm for stereo correspondence, and performed evaluation against a baseline algorithm using normalized cross correlation across a variety of metrics. Experimental trials revealed that the proposed descriptor exhibited a significant improvement, compared to the other existing methods.

We reports improved monitoring performance of Self plasma-optical emission spectroscopy (SP-OES) by augmenting a by-pass tube to a conventional straight (or single) tube type self plasma reactor. SP-OES has been used as a tool for the monitoring of plasma chemistry indirectly in plasma process system. The benefits of SP-OES are low cost and easy installation, but some semiconductor industries who adopted commercialized SP-OES product experiencing less sensitivity and slow sensor response. OH out-gas chemistry monitoring was performed to have a direct comparison of a conventional single type tube and a by-pass type tube, and fluid dynamic simulation on the improved hardware design was also followed. It is observed faster pumping out of OH from the chamber in the by-pass type SP-OES.

This paper outlines the Taguchi optimization methodology, which is applied to optimize cutting parameters in end milling when machining STS304 with TiAlN coated SKH59 tool under up and down end milling conditions. The end milling parameters evaluated are depth of cut, spindle speed and feed rate. An orthogonal array, signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed to analyze the effect of these end milling parameters. The Taguchi design is an efficient and effective experimental method in which a response variable can be optimized, given various control and noise factors, using fewer resources than a factorial design. An orthogonal array of $L_9(33)$ was used. The most important input parameter for cutting force, however, is the feed rate, and depending on the cutter rotation direction. Finally, confirmation tests verified that the Taguchi design was successful in optimizing end milling parameters for cutting force.

In this paper, we have designed and fabricated a RF-DC voltage multiplier for 5.8GHz microwave wireless power transmission. In order to obtain higher voltage, the RF-DC voltage multiplier with 10 diodes (D-10) and the receiver module with an antenna and BPF (Band Pass Filter) was manufactured. The measured and compared results show that the voltages of the proposed one are lower than those of the previous tripler module up to 40cm. However, the voltage of the proposed one with the voltage multiplier is higher than that of the tripler module at the distances of 45cm and 50cm due to the voltage multiplier with 10 diodes.

For various process pressures, aluminum doped zinc oxide(AZO) films were deposited by in-line pulsed-DC sputtering. The deposited AZO films were optically and electrically investigated and analyzed for the window layers of CIGS solar cell systems. As the pressure was increased from 9 mtorr to 15 mtorr, the thickness of AZO was decreased as a result of scattering and its sheet resistance was rapidly increased. The transmittance of AZO was slightly decreased as the pressure was increased and the calculation of figure of merit(F.O.M) was dependent on the sheet resistance. The structural characteristics of AZO thin films analyzed by X-ray diffraction(XRD) showed no significant dependency according to the pressure.

Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.

In the display industry, the residual vibration of the transfer robot can increase the process time and cause the breakage of the glass substrate, which is critical to productivity of display manufacturing. In this paper, the natural frequencies of transfer robot are analyzed by finite element method. On the basis of the analyzed data, we investigated the response characteristics of input shaping control with or without the glass presence on the hand of the transfer robot using MATLAB program, and compared with the current response characteristics of input shaping control applied to the industry. Based on this, we suggest an optimal residual vibration control method for the practical application in display industry.

Recently, ancient documents are actively studied and discussed. However, ancient documents has a few problems on interpretation. The antique documents are too fragile to hand over. So, some studies have been carried out using terahertz to read ancient documents without damaging them. Three techniques are necessary to read letters using terahertz. First, PPEX algorithm, which distinguishes pages. Second, TGSI technique, which distinguishes text from paper on a page. Third, CCSC algorithm, which transforms signals to letters. In this paper, we will describe the preprocessing process to facilitate the recognition of letters before applying the post processing as we mentioned above. Histogram equalization, Histogram stretching and the Sobel filter were applied to the preprocessing.