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Properties of ITO thin films deposited by RF magnetron sputtering with process pressure  

Jeong, Seong-Jin (Electronic Engineering of Cheongju University)
Kim, Deok-Kyu (School of Electronic Engineering, Chungbuk national University)
Kim, Hong-Bae (school of Electronic and Information Engineering, Cheongju University)
Publication Information
Journal of the Semiconductor & Display Technology / v.9, no.4, 2010 , pp. 83-86 More about this Journal
Abstract
The transparent electrode properties of ITO films deposited by RF magnetron sputtering with process pressure were investigated. The ITO thin films was deposited on a glass substrate using a target with 3in diameter sintered at a ratio of $In_2O_3$ : $SnO_2$ (9 : 1). 200-nm-thick ITO thin films were manufactured by various process pressures ($2.0{\times}10^{-2}$, $7.0{\times}10^{-3}$ and $2.0{\times}10^{-3}$ Torr). The optical transmittance and resistivity of the deposited ITO thin films showed a relatively satisfactory result under $10^{-2}$ Torr. For high process pressure, the optical transmittance was below 80%, while for low process pressure, the optical transmittance was above 85%. As a result of of mobility, resistivity and carrier concentration by Hall measurement, we obtained satisfactory properties to apply into a transparent conducting thin film.
Keywords
ITO; RF magnetron sputtering; RF power; Optical transmittance; Process pressure;
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