In this study, we have shown the power conversion efficiency of organic thin film photovoltaic devices utilizing a conjugated polymer/fullerene bulk-hetero junction structure. We use MDMO-PPV(Poly[2-methoxy-5-(3,7-dimethyloctyloxy -1,4-phenylenevinylene) as an electron donor, PCBM([6,6]-Phenyl C61 butyric acid methyl ester) as an electron accepter, and PEDOT:PSS used as a HTL(Hole Transport Layer). We have fabricated OPV(Organic Photovoltaic) devices as a function of the MDMO-PPV/PCBM concentration from 1:1 to 1:5. The electrical characteristics of the fabricated devices were investigated by means of I-V, P-V, F·F(Fill Factor) and PCE(power conversion efficiency). The power conversion efficiency was gradually increased until 1:4 ratio, also the highest efficiency of 0.4996% was obtained at the ratio.

In this paper, we developed and presented a design result for optimizing the geometry of Ag circular SPP waveguide for subwavelength waveguide applications. We investigated the effect of the design parameters on the light propagation and find the optimum design for small modal size, high coupling coefficient, and low sensitivity. The results show that the globally optimal design locates optimal waveguide geometries more efficiently than individual optimal points for multivalued objective function.

we have studied characterization of microbolometer based on the co-sputtered silicon-antimony ($Si_{1-x}Sb_x$) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at $200^{\circ}C$ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited $Si_{1-x}Sb_x$ films have been measured the range of -2.3~-2.8%/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over $250^{\circ}C$. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

In this study, we synthesized novel UV-curable binders and applied for negative photoresist of display device. First, we synthesized UV-curable binders by radical polymerization with a mixture of Styrene/Methyl methacrylate/Methacrylic acid/Glycidyl methacrylate/N-Cyclohexylmaleimide at a fixed composition. Following the first step, we prepared a negative photoresist mixture optimized with photo sensitive initiator and others for the litho test. And then, we studied resolution and film retention with molecular weight of each binders and numerical value of Alkaline Desolution Rate(ADR). As a result of the litho test, we found that if the novel polymers have same numerical value of ADR, the resolution decreased and the film retention increased with the increasing of molecular weight of photoresist binder.

This paper presents one and two dimensional simulation results with discontinuous features (shocks) of capacitively coupled rf plasmas. The model consists of the first two and three moments of the Boltzmann equation for the ion and electron fluids respectively, coupled to Poisson's equation for the self-consistent electric field. The local field and drift-diffusion approximations are not employed, and as a result the charged species conservation equations are hyperbolic in nature. Hyperbolic equations may develop discontinuous solutions even if their initial conditions are smooth. Indeed, in this work, secondary electron emission is shown to produce transient electron shock waves. These shocks form at the boundary between the cathodic sheath (CS) and the quasi-neutral (QN) bulk region. In the CS, the electrons emitted from the electrode are accelerated to supersonic velocities due to the large electric field. On the other hand, in the QN the electric field is not significant and electrons have small directed velocities. Therefore, at the transition between these regions, the electron fluid decelerates from a supersonic to a subsonic velocity in the direction of flow and a jump in the electron velocity develops. The presented numerical results are consistent with both experimental observations and kinetic simulations.

Local Binary Pattern (LBP) is becoming a popular tool for various machine vision applications such as face recognition, classification and background subtraction. In this paper, we propose a new extension of LBP, called the Diagonal LBP (DLBP), to handle the image-based gender classification problem arise in interactive display systems. Instead of comparing neighbor pixels with the center pixel, DLBP generates codes by comparing a neighbor pixel with the diagonal pixel (the neighbor pixel in the opposite side). It can reduce by half the code length of LBP and consequently, can improve the computation complexity. The Support Vector Machine is utilized as the gender classifier, and the texture profile based on DLBP is adopted as the feature vector. Experimental results revealed that our approach based on the diagonal LPB is very efficient and can be utilized in various real-time pattern classification applications.

Recently, block-based transforms, like discrete cosine transform (DCT), have been widely used in image and video coding standards, but block-based transforms have a weak point with blocking effect. However, the integer lapped orthogonal transform (ILOT) is a tool for block-based coding with bases functions that overlap near blocks, so it has a strong point against blocking effect. Although it has slightly higher arithmetic complexity than the DCT, the coding gain is significantly higher with much less blocking artifacts. This paper introduces the integer lapped orthogonal transforms and discrete cosine transform. And we compare the performance of DCT with ILOT which is proposed a new efficient method for image coding applications.

We investigated that electrical and optical the properties of IZO thin film for OLED anode application. The IZO thin film was the deposited on the glass substrate by facing targets system as a function of substrate temperature. As a result, the electrical and optical property of IZO thin film prepared with $150^{\circ}C$ was most excellent. To confirm the suitability of the IZO thin film for OLED anode, we evaluated the performance of OLED with IZO/TPD/Alq3/LiF/Al fabricated on IZO anode. Also, the performance of OLED fabricated on IZO anode showed the most excellent at $150^{\circ}C$ substrate temperature.

Transparent electrode ZnO:Al(AZO)films were deposited on a PES (polyethersulfone) polymer substrate for thin film solar cells applications. A PES substrate with a thickness of 0.2mm and transmittance > 90% in the visible range was used because it is light weight and can deform easily. AZO thin films were prepared at a fixed DC power, $PO_2\;=\;P(O_2)/[P(O_2)\;+\;P(Ar)]$, and various substrate temperatures. The properties of AZO thin films were examined by X-ray diffraction, UV/VIS spectroscopy, four-point probe, Hall measurements, and field emission scanning electron microscopy. The lowest resistivity of all the films was $4.493\;{\times}\;10^{-4}\;[\Omega-cm]$ and the transmittance was > 80% in the visible range.