Silicon oxynitride films were deposited using ammonia as a nitrogen source via PECVD (plasma enhanced chemical vapor deposition) to study the physical properties of the films. Silane and nitrous oxide were used as silicon and oxygen sources, respectively. The composition of the silicon oxynitride films was well controlled by changing the ratios of the sources and confirmed by XPS. The silicon oxynitride films with high oxygen content showed bigger compressive stress and less refractive index, while the values of surface roughness were around 1 nm, irrespective of the variation of the source ratios.

The bonding structure of organic materials such as fluorinated amorphous carbon films was classified into two types due to the chemical shifts. The electrical properties of fluorinated amorphous carbon films also showed very different effect of two types notwithstanding a very little difference. Fluorinated amorphous carbon films with the cross-link break-age structure existed large leakage current resulting from effect of the electron tunneling. Increasing the cation due to the electron-deficient group increased the barrier height of the films with the cross-link amorphous structure, therefore the electric characteristic of the final materials with low dielectric constant was also improved. The lowest dielectric constant is 2.3 at the sample with the cross-link amorphous structure.

This paper shows that carbon nanotubes can be applied to a nanopipette. Nano space in atomic force microscope multi wall carbon nanotube tips is filled with molecules and atoms with charges and then, the tips can be applied to nanopipette when the encapsulated media flow off under applying electrostatic farces. Since the nano space inside the tips can be refilled, the tips can be permanently used in ideal conditions of no chemical reaction and no mechanical deformation. Molecular dynamics simulations for nanopipette applications demonstrated the possibility of nano-lithography or single-metallofullerene-transistor array fabrication.

LED lamp was designed by the serial-parallel integration of LED chips in metal-interconnection. The 7 $4.5{\times}4.5\;in^{2}$ masks were designed with the contact type of chrome-no mirror?dark. The white epitaxial thin film was grown by metal-organic chemical vapor deposition. The active layers were consisted with the serial order of multi-quantum wells for blue, green and red lights. The fabricated LED chip showed the electroluminescence peaked at 450, 560 and 600 nm. For the current injection of 20 mA, the operating voltage was measured to 4.25 V and the optical emission power was obtained to 0.7 $\mu$W.

The effects of the base vacuum level on a plasma display panel (PDP) produced by the vacuum in-line sealing technology were investigated. The main equipment of the vacuum in-line sealing process consists of the sealing chamber, pumping systems for evacuating, mass flow controller for introducing the plasma gases, and other measuring systems. During the sealing process, the impurity gases were fully evacuated and the panel was prevented from the adsorption of impurity gases. As a result, the brightness increased as the impurity gas density decreased, so we found that the vacuum in-line sealing process was more efficient technology an the conventional sealing process.

As the integrated devices become more and more sophistcated, the diameter of wafers increased up to 300 mm and strict level of cleaning is necessary to remove the particulates on the surface of wafer. Therefore we need a new type of wet-station which can reduce DI water and chemical in the cleaning process. Moreover, it is important to control the temperature and the concentration of chemical in the wet-station. In the conventional chemical supply system, it is difficult not only to fit the mixing rate of chemicals in cleaning process, but also to fit the quantity and temperature. Thus, we propose a new chemicals supply system, which overcomes above problems by the analysis of fluid and thermal transfer on chemical supply system.

Due to high permeability of the ferrite cores, the characteristics of the inductively coupled plasma(ICP) are expected to be greatly improved. We investigated the effect of the ferrite cores on conventional inductively coupled plasma. It was observed that the current and voltage in the ICP antenna are slightly decreased and the power transfer efficiency is increased. However, due to eddy current and hysteresis loss, plasma density in the ICP with the ferrite cores is not increased. It seems that the ICP with the ferrite cores at low frequency ($\∼$100 kHz) will be greatly improved since the losses at the low frequency can be negligible.