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Electrical properties of the Al doped ZnO thin films fabricated by RF magnetron sputtering system with working pressure and oxygen contents  

Kim, Jong-Wook (Electronic Engineering of Cheongju University)
Kim, Hong-Bae (School of Electronic and Information Engineering, Cheongju University)
Publication Information
Journal of the Semiconductor & Display Technology / v.9, no.4, 2010 , pp. 77-81 More about this Journal
Abstract
The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.
Keywords
Al doped ZnO(AZO); Transparent Thin Film Transistor(TTFT); RF magnetron sputtering; Oxygen content; working pressure;
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Times Cited By KSCI : 2  (Citation Analysis)
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