The GaN thin film on the 8 periods InGaN/GaN multi-quantum well structure was grown on the sapphire substrate using metal-organic chemical vapor deposition. The nano-scaled triangular-lattice holes with the diameter of 150 nm were patterned on a polymethylmethacrylate blocking film using an electron beam nano-lithography system. The thin slab and two-dimensional photonic crystals with the thickness of 28 nm were fabricated on the GaN layer for the blue light diffraction sources. The photonic crystal with the lattice parameter of 460 nm enhances spectral intensity of photoluminescence indicating that the photonic crystals provides the source of nano-diffraction for the blue light of the 450-nm wavelength.

The detailed studies regarding to the front and rear panel geometries of plasma display were needed to improve the luminance and efficiency. In plasma displays, 3-dimensional optical code can be used to analyze the variation of geometries and the changing of optical properties. The visible light distributions and illuminance were simulated depending on bus electrode position, ITO geometries, and alteration of dielectric layer's properties. This paper is concerned with development of a cell having high luminance and high efficiency for optical simulation. And the result of values could be expected to the application of real POP cell.

A new reset waveform with negative ramp pulse is proposed. Conventional reset waveform applied to the commercial PDP uses a positive ramp pulse. The reset waveforms, especially focused on ramp area, were examined with 2 dimensional fluid code. The proposed negative reset waveform showed much lower ignition voltage ($\sim$70V) as compared with the conventional reset waveform. When the negative ramp pulse was applied, all of the positive-charged ions are collected on the scan electrode. It is found that the ignition voltage of reset discharge due to the negative ramp pulse became lower than that of positive ramp discharge.

This paper presents a optimizing algorithm getting through analyzing a image improvement algorithm using retinex theory. Improving a existing retinex theory's slow process speed, our proposal is that it controls a small filter size of surrounding function by comparing with original algorithm. So slow process speed decreased drastically. For filling a short of lighting information by small filter, we also selected gray image as a forth channel. Using the color constancy, we got fast process time like linear color correction and could do comfortable auto color rectification according to other images.

This paper focuses on lossy medical image compression methods for medical images that operate on three-dimensional(3-D) irreversible integer wavelet transform. We offer an application of unbalanced tree structure algorithm to medical images, using a 3-D unbalanced wavelet decomposition and a 3-D unbalanced spatial dependence tree. The wavelet decomposition is accomplished with integer wavelet filters implemented with the lifting method. We have tested our encoder on volumetric medical images using different integer filters and coding unit sizes. The coding unit sizes of 16 slices save considerable dynamic memory(RAM) and coding delay from full sequence coding units used in previous works. If we allow the formation of trees of different lengths, then we can accomodate more transaxial scales than three. The encoder and decoder can then keep track of the length of the tree in which each pixel resides through the sequence of decompositions. Results show that, even with these small coding units, our algorithm with certain filters performs as well and better in lossy coding than previous coding systems using 3-D integer unbalanced wavelet transforms on volumetric medical images.

As more and more digital images are made by various applications, image retrieval becomes a primary concern in technology of multimedia. This paper presents color based descriptor that uses information of color distribution in color images which is the most basic element for image search and performance of proposed visual feature is evaluated through the simulation. In designing the image search descriptor used color histogram, HSV, Daubechies 9/7 and 2 level wavelet decomposition provide better results than other parameters in terms of computational time and performances. Also histogram quadratic matrix outperforms the sum of absolute difference in similarity measurements, but spends more than 60 computational times.

Many issues arose to use the Pb-free solder as adhesive materials in MEMS ICs and packaging. Then this study for easy and simple sealing method using adhesive materials was carried out to maintain hermetic characteristic in MEMS Package. In this study, Hermetic characteristic using negative PR (XP SU-8 3050 NO-2) as adhesive at the interface of Si test coupon/glass substrate and Si test coupon/LTCC substrate was examined. For experiment, the dispenser pressure was 4 MPa and the $200\;{\mu}m{\Phi}$ syringe nozzle was used. 3.0 mm/sec as speed of dispensing and 0.13 mm as the gap between Si test coupon and nozzle was selected to machine condition. 1 min at $65^{\circ}C$ and 15 min at $95^{\circ}C$ as Soft bake, $200\;mj/cm^2$ expose in 365 nm wavelength as UV expose, 1 min at $65^{\circ}C$ and 6 min at $95^{\circ}C$ as Post expose bake, 60 min at $150^{\circ}C$ as hard bake were selected to activation condition of negative PR. Hermetic sealing was achieved at the Si test coupon/ glass substrate and Si test coupon/LTCC substrate. The leak rate of Si test coupon/glass substrate was $5.9{\times}10^{-8}mbar-l/sec$, and there was no effect by adhesive method. The leak rate of Si test coupon/LTCC substrate was $4.9{\times}10^{-8}mbar-l/sec$, and there was no effect by dispensing cycle. Better leak rate value could be achieved to use modified substrate which prevent PR flow, to increase UV expose energy and to use system that controls gap automatically with vision.

We employed in-situ spectroscopic ellipsometry(SE) and imaging ellipsometry(IE) to study the interaction of water and photoresist(PR) in 193 immersion lithography. Real time measurement of SE showed thickness increase when PR was immerged in water indicating swelling effect. From the temporal evolution we could observe its reaction-limited behavior. Meanwhile, IE could identify the modification of PR surface by contact of water even for a short period of a second.

Wet etching process in recent semiconductor manufacturing is devided into batch and single wafer type. Batch type wet etching process provides more throughput with poor etching uniformity compared to single wafer type process. Single wafer process achieves better etching uniformity by boom-swing injected chemical on rotating wafer. In this study, etching characteristics of $SiO_2$ layer at room and elevated temperature is evaluated and compared. The difference in etching rate and uniformity of each condition is identified, and the temperature profile of injected chemical is theoretically calculated and compared to that of experimental result. Better etching uniformity is observed with single wafer tool with boom-swing injection compared to single wafer process without boom-swing or batch type tool.

Various methods of making thin film is being used in semiconductor manufacturing process. The most common method in this field includes CVD(Chemical Vapor Deposition) and PVD(Physical Vapor Deposition). Thin film is deposited on both the backside and the frontside of wafers. The thin film deposited on the backside has poor thickness profile, and can contaminate wafers in the following processes. If wafers with the thin film remaining on the backside are immersed in batch type process tank, the thin film fall apart from the backside and contaminate the nearest wafer. Thus, it is necessary to etch the backside of the wafer selectively without etching the frontside, and chemical injection nozzle positioned under the wafer can perform the backside etching. In this study, the backside chemical injection nozzle with optimized chemical injection profile is built for single wafer tool. The evaluation of this nozzle, performed on $Si_3N_4$ layer deposited on the backside of the wafer, shows the etching rate uniformity of less than 5% at the etching rate of more than $1000{\AA}$.