반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

RF 마그네트론 스퍼터링법으로 제작된 ITO 박막의 공정압력 변화에 따른 특성

Properties of ITO thin films deposited by RF magnetron sputtering with process pressure

  • 정성진 (청주대학교 전자공학과) ;
  • 김덕규 (충북대학교 전자공학부) ;
  • 김홍배 (청주대학교 전자정보공학부)
  • Jeong, Seong-Jin (Electronic Engineering of Cheongju University) ;
  • Kim, Deok-Kyu (School of Electronic Engineering, Chungbuk national University) ;
  • Kim, Hong-Bae (school of Electronic and Information Engineering, Cheongju University)
  • 투고 : 2010.11.30
  • 심사 : 2010.12.17
  • 발행 : 2010.12.31
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초록

The transparent electrode properties of ITO films deposited by RF magnetron sputtering with process pressure were investigated. The ITO thin films was deposited on a glass substrate using a target with 3in diameter sintered at a ratio of $In_2O_3$ : $SnO_2$ (9 : 1). 200-nm-thick ITO thin films were manufactured by various process pressures ($2.0{\times}10^{-2}$, $7.0{\times}10^{-3}$ and $2.0{\times}10^{-3}$ Torr). The optical transmittance and resistivity of the deposited ITO thin films showed a relatively satisfactory result under $10^{-2}$ Torr. For high process pressure, the optical transmittance was below 80%, while for low process pressure, the optical transmittance was above 85%. As a result of of mobility, resistivity and carrier concentration by Hall measurement, we obtained satisfactory properties to apply into a transparent conducting thin film.

키워드

참고문헌

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