This paper presents the AMR (Automatic Meter Reading) system using the binary CDMA (Code Division Multiple Access) radio technology. The binary CDMA is the new radio technology in domestic research. Main implementation topics includes the binary CDMA remote meter reading system, the wireless piconet configuration for the wireless automatic meter reading, and the transmission scheduling for sending and receiving data. Also, the wireless packet data encryption is very important topics for the wireless automatic meter reading. The proposed AMR system is implemented as a pilot project in Jeju and Gangwon. It can be seen that the wireless remote reading using the binary CDMA wireless technology can be applied to the AMR system.

Lapping is a very complicated and random process resulting from the variation of abrasive grains in its sizes and shapes and from the numerous factors having an effect on the process quality. This paper presents a study of a $2^4$ full factorial experimental design and analysis to optimize surface quality in lapping operation. The optimization of the factors to obtain minimum surface roughness was carried out by incorporating effect plots, main effect plots, interaction plots, analysis of variance(ANOVA), surface plots, and contour plots. The statistical design experiments, designed to reduce the total number of experiments required, indicated that, within the selected conditions, all the parameters influenced at a significance level of 5%. In addition, some of the possible interactions between these parameters also influenced the lapping process, especially those that were of third order. A regression model was suggested and fitted the experimental data very well.

Nanoimprint lithography (NIL) is the next generation photolithography process in which the photoresist is dispensed onto the substrate in its liquid form and then imprinted and cured into a desired pattern instead of using traditional optical system. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. In this paper, a pressure vessel type imprinting system was used to imprint patterns with two type pressure values (25 bar, 30 bar) and two type pressure keeping times (5 min, 10 min). The height of transferred pattern and the thickness of residual layer were measured and effects of pressurization conditions - pressure and pressure keeping time - on the pattern transfer in thermal NIL were investigated.

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to 4 V in the previous work. This is because the surface effect at the drain side decreases the channel current and the impact ionization in the channel at high drain voltage. In order to increase the breakdown voltage at the same asymmetric gate-recess structure, the InGaAs channel structure is replaced with the InGaAs/InP composite channel in the simulation. The simulation results with InGaAs/InP channel show that the breakdown voltage increases to 6V in the MHEMT as the current decreases. In this paper, the simulation results for the InGaAs/InP channel are shown and analyzed for the InGaAs/InP composite channel in the MHEMT.

In this paper, the boost converter was implemented by digital control in many applications of the step-up. The PWM(pulse width modulation) control module of boost converter was digitized at power converter using the FPGA device and VHDL. The boost converter was designed to output a fixed voltage through the PI control algorithm of the PWM control module even if input voltage and output load are variable. The boost converter was digitized can be simplified by reducing the size of the module and the external control components. Thus, the digital power IC has advantageous for weight reduction and miniaturization of electronic products because it can be controlled remotely by setting the desired output voltage and PWM control module. The boost converter using the digital power IC was confirmed through experiments and the good performances were showed from experiment results.

Image retrieval is one of the most exciting and fastest growing research fields in the area of multimedia technology. As the amount of digital contents continues to grow users are experiencing increasing difficulty in finding specific images in their image libraries. This paper proposes an efficient image descriptor which uses a local color and texture in the non-overlapped block images. To evaluate the performance of the proposed method, we assessed the retrieval efficiency in terms of ANMRR with common image dataset. The experimental trials revealed that the proposed algorithm exhibited a significant improvement in ANMRR, compared to Dominant Color Descriptor and Edge Histogram Descriptor.

In the semiconductor heat-treatment process, the temperature uniformity determines the film quality of a wafer. This film quality effects on the overall yield rate. The heat transfer of the wafer surface in the heat-treatment process equipment is occurred by convection and radiation complexly. Because of this, there is the nonlinearity between the wafer temperature and reactor. Therefore, the accurate prediction of temperature on the wafer surface is difficult without the direct measurement. The thermal camera and the T/C wafer are general ways to confirm the temperature uniformity on the heat-treatment process. As above ways have limit to measure the temperature in the precise domain under the micro-scale. In this study, we developed the thin film type temperature sensor using the MEMS technology to establish the system which can measure the temperature under the micro-scale. We combined the experiment and numerical analysis to verify and calibrate the system. Finally, we measured the temperature on the wafer surface on the semiconductor process using the developed system, and confirmed the temperature variation by comparison with the commercial T/C wafer.

The electronic device, such as flat panel display (FPD), is very important in our life as a means of communication between humans. Liquid crystal display (LCD), which is categorized as a flat panel display, has been used in many display products, especially in TV industry. An LED TV is composed of several electrical components, such as liquid critical module (LCM), analog to digital convertor (AD), power supplier, and inverter board. These modules are very vulnerable to particulate contamination, and causing malfunction or visibility degradation. In this study, we developed a test method for prediction of LCM's lifetime. The test system consists of carbon particle generation flame, dilution system, test chamber, and particle concentration monitoring instrument. Since the carbon particles are the most abundant in the atmosphere and easily absorb light, soot particles are used as a challenging material for this test. The concentration of generated soot particles is set around 4,000,000 #/cc, which is 400 times higher than that of usual atmospheric particles. Through this experiment, we deduced the relationship between the dust concentration and life time of the test specimen.

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 85% in the visible range. The current density and the luminance of OLED devices with IZO thin films deposited at room temperature in 0.1sccm $O_2$ ambient gas are the highest amongst all other films. The optical band gap energy of IZO thin films plays a major role in OLED device performance, especially the current density and luminance.

Mold die sticking arises from silica filler abrasion to the cavity surface. Ni-P electroplating was examined to substitute conventional hard Cr plating. More than 4% of Phosphorus in the electroplated film produces nano crystal structure and annealing makes $Ni_3P$ precipitated to get hardness values equivalent to hard Cr.