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Electrical Properties of Organic PVA Gate Insulator Film on ITO/Glass Substrates  

Choi, Jin-Eun (Department of Electronics and Eletrical Engineering, Dankook University)
Gong, Su-Cheol (Department of Electronics and Eletrical Engineering, Dankook University)
Jeon, Hyeong-Tag (Division of Materials Science and Engineering, Hanyang University)
Park, Hyung-Ho (Dept. of Ceramics Engineering, Yonsei University)
Chang, Ho-Jung (Department of Electronics and Eletrical Engineering, Dankook University)
Publication Information
Journal of the Semiconductor & Display Technology / v.9, no.4, 2010 , pp. 1-5 More about this Journal
Abstract
The PVA (poly-vinyl alcohol) insulators were spun coated onto ITO coated glass substrates with the capacitors of Glass/ITO/PVA/Al structure. The effects of PVA concentrations (3.0, 4.0 and 5.0 wt%) on the morphology and electrical properties of the films were investigated. As the concentration of PVA increased from 3.0 to 5.0 wt%, the leakage current of device decreased from 17.1 to 0.23 pA. From the AFM measurement, the RMS value decreased with increasing PVA concentration, showing the improvement of insulator film roughness. The capacitances of the films with PVA concentrations of 4.0 and 5.0 wt% were about 28.1 and 24.2 nF, respectively. The lowest leakage current of 1.77 PA was obtained at the film thickness of 117.5 nm for the device with fixed PVA concentration of 5.0 wt%.
Keywords
cross linked PVA; gate insulator; capacitance; leakage current; organic thin film transistor;
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Times Cited By KSCI : 6  (Citation Analysis)
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