Programmable Logic Controller(PLC) is the most widely utilized and plays an important role in industrial control system. Among PLC languages, Sequential Function Chart(SFC) is performed in small scale industrial process. On programming by SFC, a single sequence is utilized to control the simple process. In this paper, we propose the method that describe the improved single sequence and confirm its feasibility through an actual example.

According to the advantageous features of flash memory, its exploitation and application in mobile and ubiquitous related devices as well as voluminous storage devices is being increased rapidly. The inherent properties that are determined by configuration of flash memory unit might restrict the promising expansion in its utilization. In this paper, we study policies based on threshold values, instead of using global search, in order to satisfy our objective that is to decrease the necessary processing cost or penalty for recycling of flash memory space at the same time minimizing the potential degradation of performance. The proposed cleaning methods create partitions of candidate memory regions, to be reclaimed as free, by utilizing global or dynamic threshold values. The impact of the proposed policies is evaluated through a number of experiments, the composition of the optimal configuration featuring the methods is tested through experiments as well.

For the fabrication of blue color organic light emitting diodes(OLED) with a high performance, 2-TNATA [4,4',4"-tris (2-naphthylphenyl-phenylamino)-triphenylamine] as hole injection material and NPB [N,N'-bis (1-naphthyl) -N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as hole transport material were deposited on the ITO (indium tin oxide)/glass substrate by the vacuum thermal evaporation. After then, blue color emission layer was deposited using TPM-BiP[(4'-Benzoylferphenyl-4-yl)phenyl-methanone-Diethyl(biphenyl-4-ymethyl)phosphonate] and GDI602 as a light emitting organic material. Finally, the two kinds of OLEDs with the structure of $ITO/2-TNATA/NPB/TPM-BiP/Alq_3/LiF/Al and ITO/2-TNATA/NPB/GDI602/Alq_3/LiF/Al$ were prepared by in-situ deposition. The maximum current density and luminance were found to be about $588\;mA/cm^2\;and\;5239\;cd/m^2$ at 12V for the OLED sample with the structure of $ITO/2-TNATA/NPB/TPM-BiP/Alq_3/LiF/Al$. Color coordinate of blue OLED was x=0.18, y=0.18 (at llV) and the maximum current efficiency was 2.82 cd/A (at 6V) with the peak emission wavelength of 440 nm.

Effects of $O_2$ flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on $SiO_2$ substrates in a low-pressure chemical vapor deposition chamber using a mixture of $SiH_4$ and $H_2$. In some cases $O_2$ was intentionally introduced during deposition. Growth of poly silicon was observed at the substrate temperature as low as $480^{\circ}C$ when $O_2$ was flowed during deposition implying that crystallization of Si was enhanced by $O_2$ flow. On the other hand, $O_2$ flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by $O_2$ flow was suggested from these results.

The blue emitting OLEDs using TMP-BiP[(4'-Benzoylferphenyl-4-yl)phenyl-methanone-Diethyl(biphenyl-4-ymethyl) phosphonate] host and DJNBD-1 dopant have been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] as a hole injection material and NPB [N,N'-bis(1-naphthyl)N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as a hole transport material were deposited on the ITO(indium tin oxide)/glass substrate by vacuum thermal evaporation method. Followed by the deposition, blue color emission layer was deposited using TMP-BiP as a host material and DJNBD-1 as a dopant. Finally, small molecule OLEDs with structure of $ITO/2-TNATA/NPB/TMP-BiP:DJNBD-l/Alq_3/LiF/Al$ were obtained by in-situ deposition of $Alq_3$, LiF and Al as the electron transport material, electron injection material and cathode, respectively. The effect of dopant into host material of the blue OLEDs was studied. The blue OLEDs with DJNBD-1 dopant showed that the maximum current and luminance were found to be about 34 mA and $8110\;cd/m^2$ at 11 V, respectively. In addition, the color coordinate was x=0.17, y=0.17 in CIE color chart, and the peak emission wavelength was 440 nm. The maximum current efficiency of 2.15 cd/A at 7 V was obtained in this experiment.

Electroless Ni-P coating is widely used for chemical, electronic, and semiconductor equipment parts because of its corrosion resistance. The incorporation of chemically-inert PTFE particles into the Ni-P films improves properties such as, non-stick, anti-adhesive and better corrosion resistance. However, soft PTFE particles degrade the hardness, wear and abrasion resistance. In this study, effects of PTFE and W addition to the Ni-P-coatings were compared by the XRD, SEM, sheet resistance, contact angle, and microhardness measurements. The change in sheet resistance was negligible, but contact angle was doubled by the addition of PTFE and W. The microhardness was lower for Ni-P-PTFE, but higher for Ni-P-PTFE-W coatings, compared to that of Ni-P coatings.

Low frequency (400 kHz) Ferrite ICP has been proposed for large area processing. Because the coupling coefficient is close to 1, the transformer matching can be adapted to Ferrite ICP. The transformer matching system is simple. In this paper the new matching system by controlling the turns of transformer using relays is proposed for impedance matching. We developed a simple matching system and characterized it when the turns were changed. It was observed that the 2-channel relay is available for transformer matching.

An integrated material removal model considering thermal, chemical and contact mechanical effects in CMP process is proposed. These effects are highly coupled together in the current modeling effort. The contact mechanics is employed in the model incorporated with the heat transfer and chemical reaction mechanisms. The mechanical abrasion actions happening due to the mechanical contacts between the wafer and abrasive particles in the slurry and between the wafer and pad asperities cause friction and consequently generate heats, which mainly acts as the heat source accelerating chemical reaction(s) between the wafer and slurry chemical(s). The proposed model may be a help in understanding multi-physical interactions in CMP process occurring among the wafer, pad and various consumables such as slurry.

Optical simulation of the rear and front panel geometries were needed to improve the luminance and efficiency in PDP cells. The 3-dimensional optical code can be used to analyze the variation of geometries and changing of optical properties. In order to improve the accuracy of simulated results, a new UV source, called a multi-cubes UV source, was designed. To design the source, at first UV distribution was calculated with the plasma fluid code and then the UV distribution was transformed to the multi-cube structures in the optical code. Compared to the results from existing UV source, called a planar UV source, could be improved the accuracy of visible light distribution. Simulated results were also compared to the visible distribution measured with the ICCD in a real PDP cell.

The proposed method offers an improved DC/DC converter scheme to increase power density. It is based on half-bridge topology with newly introduced pulse-grouping control method, which helps to reduce the transformer size and the volume of semiconductor devices maintaining high efficiency. Test results with 85W(18.5V/4.6A) design shows that the measured efficiency is 93.5% with power density of $36W/in^3$.

Characteristics of an active pixel switch readout circuit were studied by SPICE simulation. A simple readout circuit consists of an operation amplifier, a diode, and a down-counter was suggested, and its successful operation was verified by showing that the differences in the detected signal intensity are accordingly converted to modulation of the voltage pulses generated by the comparator. A scheme to use these pulses to generate the original image was also put forward.

In this paper, a new content-based color image retrieval method is proposed, in which both the color content and the spatial relationship of image have been taken into account. In order to represent the spatial distribution information of image, a disorder matrix, which has the invariance to the rotation and translation of the image content, has been designed. This is based on multi-resolution color-spatial information. We present our algorithm in the following section, and then verified the search results with comparison to other methods, such as color histogram, wavelet histogram, correlogram and wavelet correlogram. Experimental results with various types of images show that the proposed method not only achieves a high image retrieval performance but also improve the retrieval precision.

Radio Frequency Identification (RFID) is a common term for technologies using micro chips that are able to communicate over short-range radio and that can be used for identifying physical objects. RFID technology already has several application areas and more are being envisioned all the time. While it has the potential of becoming a really ubiquitous part of the information society over time, there are many security and privacy concerns related to RFID that need to be solved. This paper proposes a method which could protect private information and ensure RFID's identification effectively storing face feature information on RFID tag. This method improved linear discriminant analysis has reduced the dimension of feature information which has large size of data. Therefore, face feature information can be stored in small memory field of RFID tag. The proposed algorithm in comparison with other previous methods shows better stability and elevated detection rate and also can be applied to the entrance control management system, digital identification card and others.

High brightness and long persistent luminescence phosphor $CaAl_2O_4:Eu^{2+}$ was prepared with varying $Eu^{2+}$ concentration by solid state reaction technique. Synthesized materials were investigated by powder X-ray diffractometer (XRD), SEM, TEM, photoluminescence excitation and emission spectra. Broad band UV excited luminescence of the $CaAl_2O_4:Eu^{2+}$ was observed in the blue region (${\lambda}_{max}\;=\;440\;nm$) due to transitions from the $4f^65d^1$ to the $4f^7$ configuration of the $Eu^{2+}$ ion. The decay time of the persistence indicated that the persistent luminescence phosphor has bright phosphorescence and maintains a long duration. These materials have great potential for outdoor night time displays.