초록
In this study, we have studied the characteristics of the organic photodiode varying due to the blending conditions of the quantum dots (QDs). The active layer of the photodiode was formed with poly (3-hexylthiophene) and phenyl-C61-butyric acid methyl ester, and CdSe QDs with and without ZnS shell were blended in the active layer. The photodiode with CdSe/ZnS QDs showed the highest power conversion efficiency (PCE) and short-circuit current (Jsc). The performance change of the organic photodiode by X-ray irradiation was also measured. Regardless of X-ray irradiation conditions, the photodiode with CdSe/ZnS QDs showed better stability than other cases.