반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

GaN, Cool MOS, SiC MOSFET을 이용한 DC-DC 승압 컨버터의 효율 특성

Efficiency Characteristics of DC-DC Boost Converter Using GaN, Cool MOS, and SiC MOSFET

  • 김정규 (청주대학교 반도체공학과) ;
  • 양오 (청주대학교 반도체공학과)
  • Kim, Jeong Gyu (Semiconductor Engineering of CheongJu University) ;
  • Yang, Oh (Semiconductor Engineering of CheongJu University)
  • 투고 : 2017.05.29
  • 심사 : 2017.06.21
  • 발행 : 2017.06.30
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초록

In this paper, recent researches on new and renewable energy have been conducted due to problems such as energy exhaustion and environmental pollution, and new researches on high efficiency and high speed switching are needed. Therefore, we compared the efficiency by using high speed switching devices instead of IGBT which can't be used in high speed switching. The experiment was performed theoretically by applying the same parameters of the high speed switching devices which are the Cool MOS of Infineon Co., SiC C3M of Cree, and GaN FET device of Transform, by implementing the DC-DC boost converter and measuring the actual efficiency for output power and frequency. As a result, the GaN FET showed good efficiency at all switching frequency and output power.

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참고문헌

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