반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

용액공정으로 제작한 PVP-IZO TFT의 UV-O3 처리를 통한 전기적 특성 향상 연구

Study on Electrical Characteristic Improvement of PVP-IZO TFT Prepared by Solution Process Using UV-O3 Treatment

  • 김유정 (충남대학교 전자전파정보통신공학과) ;
  • 정준교 (충남대학교 전자전파정보통신공학과) ;
  • 박정현 (충남대학교 전자전파정보통신공학과) ;
  • 정병준 (충남대학교 전자전파정보통신공학과) ;
  • 이가원 (충남대학교 전자공학과)
  • Kim, Yu Jung (Dept. of Electronic Radio Information Communication Engineering, Chungnam National Univ.) ;
  • Jeong, Jun Kyo (Dept. of Electronic Radio Information Communication Engineering, Chungnam National Univ.) ;
  • Park, Jung Hyun (Dept. of Electronic Radio Information Communication Engineering, Chungnam National Univ.) ;
  • Jung, Byung Jun (Dept. of Electronic Radio Information Communication Engineering, Chungnam National Univ.) ;
  • Lee, Ga Won (Dept. of Electronics Engineering, Chungnam National Univ.)
  • 투고 : 2017.06.05
  • 심사 : 2017.06.19
  • 발행 : 2017.06.30
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초록

In this paper, solution based Indium Zinc Oxide thin film transistors (IZO TFTs) were fabricated with PVP gate dielectric. To enhance the electrical properties, UV-O3 treatment is proposed on solution based IZO TFTs. The gate leakage current and interface trap density is compatible with conventional ZnO-based TFT with inorganic gate insulator. Especially, the UV-treated device shows improved electrical characteristics compared to the untreated device. These results can be explained by X-ray photoelectron spectroscopy (XPS) analysis, which shows that the oxygen vacancy of UV-O3 treatment is higher than that of no treatment.

키워드

참고문헌

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