반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

InP 식각정지층을 갖는 MHEMT 소자의 InGaAs/InP 복합 채널 항복 특성 시뮬레이션

Simulation Study on the Breakdown Characteristics of InGaAs/InP Composite Channel MHEMTs with an InP-Etchstop Layer

  • Son, Myung Sik (Department of Electronic Engineering, Sunchon National University)
  • 투고 : 2013.11.12
  • 심사 : 2013.12.16
  • 발행 : 2013.12.31
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초록

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to 4 V in the previous work. This is because the surface effect at the drain side decreases the channel current and the impact ionization in the channel at high drain voltage. In order to increase the breakdown voltage at the same asymmetric gate-recess structure, the InGaAs channel structure is replaced with the InGaAs/InP composite channel in the simulation. The simulation results with InGaAs/InP channel show that the breakdown voltage increases to 6V in the MHEMT as the current decreases. In this paper, the simulation results for the InGaAs/InP channel are shown and analyzed for the InGaAs/InP composite channel in the MHEMT.

키워드

참고문헌

  1. Sung-Chan Kim, Dan An, Byeong-Ok Lim, Tae-Jong Beak, Dong-Hoon Shin, and Jin-Koo Rhee, "Highperformance 94 GHz Single Balanced Mixer Based On 70 nm MHEMT And DAML Technology, " Journal of The Institute of Electronic Engineers of Korea-SD, vol. 43, no. 4, pp.254-261, Apr. 2006.
  2. Seong-Jin Yeon, Myunghwan Park, JeHyunk Choi, and Kwangseok Seo, " 610 GHz InAlAs/In0.75GaAs Metamorphic HEMT with an Ultra-Short 15-nm-Gate, " Proc. of IEDM 2007, pp.613-616, 2007.
  3. Myung Sik Son, "Optimization Study on the Epitaxial Structure for 100nm-Gate MHEMTs with InAlAs/InGaAs/GaAs Heterostructure," Journal of the Semiconductor & Display Technology, vol. 10, no. 4, pp.107-112, Dec. 2011.
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  7. Seok Gyu Choi, Yong-Hyun Baek, Min Han, Seok Ho Bang, Jin Seob Yoon, and Jin Koo Rhee,"Study of Composite channel Structure of Metamorphic HEMT for the Improved Device Characteristics," Journal of The Institute of Electronic Engineers of Korea-SD, vol. 44, no. 12, pp.1-6, Dec. 2007.
  8. Myung Sik Son, "Study on the Breakdown Simulation for InAlAs/InGaAs/GaAs MHEMTs with an InPetchstop Layer," Journal of the Semiconductor & Display Technology, vol. 11, no. 2, pp.53-57, Jun. 2012.
  9. Myung Sik Son, "Simulation Study on the Breakdown Enhancement for InAlAs/InGaAs/GaAs MHEMTs with an InP-Etchstop Layer," Journal of the Semiconductor & Display Technology, vol. 12, no. 3, pp.23-27, Sep. 2013.