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Simulation Study on the Breakdown Characteristics of InGaAs/InP Composite Channel MHEMTs with an InP-Etchstop Layer  

Son, Myung Sik (Department of Electronic Engineering, Sunchon National University)
Publication Information
Journal of the Semiconductor & Display Technology / v.12, no.4, 2013 , pp. 21-25 More about this Journal
Abstract
This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to 4 V in the previous work. This is because the surface effect at the drain side decreases the channel current and the impact ionization in the channel at high drain voltage. In order to increase the breakdown voltage at the same asymmetric gate-recess structure, the InGaAs channel structure is replaced with the InGaAs/InP composite channel in the simulation. The simulation results with InGaAs/InP channel show that the breakdown voltage increases to 6V in the MHEMT as the current decreases. In this paper, the simulation results for the InGaAs/InP channel are shown and analyzed for the InGaAs/InP composite channel in the MHEMT.
Keywords
Millimeter wave; HEMT; Metamorphic HEMT (MHEMT); Device simulation; Hydrodynamic transport simulation; Design of Epitaxial layers; Cutoff frequency; Maximum oscillation frequency; Breakdown;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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