Fast analysis method for calculating the radiation pattern of offset dual reflector antenna are presented. The validity of proposed method was verified by comparing with results of PO/PO, GO/PO, and the equivalent paraboloid method. Proposed method is the series expansion method using the Zernike polynomials. The calculated results by using the Zernike polynomials are in good agreement with obtained results by GO/PO and equivalent paraboloid method except PO/PO.

In adaptive antenna, several models are known according to a prior knowledge about jammer signal. Among those, Frost model with contraint is generally used however it has the problem that convergence speed is slow and that stability is not good. To improve such problems, this paper proposes constrained NLMS algorithm using LS method. In addition, the result obtained by applying this algorithm to Duvall antenna model is compared with that of Frost model.

The scattering problem of a transverse electric (TE) plane wave by strip grating with a dielectric slab over a ground plane is analyzed by the method of moments. By use of equivalence principle, surface magnetic current density on the shorted slot is expanded in a series of Chebyshev polynomial a satisfying the appropriate edge condition. Numerical results for reflection coefficient are obtained and compared with other available results. Our numerical results obtained from the present method are in good agreement with other result available in the literature.

A broad-band 3-dB directional coupler is implemented by using cascaded exponential transmission line as branch lines. Compared with that of the uniform transmission line, the bandwidth of the proposed 3-dB branch-line directional cpoupler increases 2.96 times.

In this paper, graphical representations of parameter variations affected by series or parallel feedback in the load plane were studied. As a result of transformations, all parameters of 2-port was converted to circles, and the step of noise circles and gain circles was 0.1 dB and 1dB, respectively. Compared with conventional commercial CAD softwares, the circuit design procedures could be verified much more systemically. This CAD was programmed in C-language and executed in IBM-PC with VGA graphic adaptor.

Transmission line crosstalk of a printed circuit baord terminated with the linear resistive and nonlinear terminal network is analyzed. Based on a quasi-static approximation, crosstalk voltage is computed in frequency domain by applying the modal analysis. A scheme to calculate the maximum crosstalk voltage for a line terminated with the nonlinear digital gate is proposed. And also, crosstalk quantities are numerically obtained for the microstrip and strip line, and compared with the experimental data to validate relevance of this method.

In this paper, the noise contribution to the permit tivity profile reconstructed by the spectral inverse scattering scheme is investigated and a low-pass filter is proposed to reduce such the noise effects. Numerical simulations showed that the reconstructed profiles are affected by extremely large error. The suggested low-pass filter made it possible to reconstruct the permittivity profile nearly similar to the original. Furthermore, the optimal condition to the low-pass filter agreed well with the physical meaning even if several variables involved in the inverse scattering scheme were changed.

The electromagnetic fields radiated from an aperture on a conducting plance covered with a moving uniaxial plasma layer are analyzed. From wave equations in moving plasma and free space region, their solutions are obtained and radiation fields are determined by applying proper boundary conditions in each region. For a particular case of isotropic plasma layer, our results correspond to well-known results.

In this paper, a magneto-optic modulator has been designed by using single crystal BSO and polycrystal ZnSe as Faraday cells. And practical core-type optical current sensors using pure iron and permalloy have been prepared and experimented. In order to obtain efficient magnetic field detection, LED(NEC OD08358, 0.87 $\mu$m) was used as optical source, PIN-PD(OD-8454)as optical receiver and multi-mode optical fiber (100/140$\mu$m) as transmission line. The characteristics matrix of the optical element was calculated by Stokes parameter, and optic modulation characteristics equations were derived by Muller matrix. Electromagnetic analysis program (FLUX 2D, micro VAX 3600) by finite element method was used to find the magnetic flux density around the core. The measuring error of the output voltage to input current has been masured below 5% in the range of 50A to 1000A. As the temperature was changed from -20$^{\circ}C$ to 60$^{\circ}C$, the maximum measurement error of the optical output has been found to be 0.5% at 60$^{\circ}C$. These experimental results show good temperature and linearity characteristics. The SNR of the overall system was 47dB in case of 600A (250.2 Oe) conductor current and the system has good noise immunity.

To form shallow $p^+$ -n junctions, Ge and As ions were employed for preamorphization, and B or BF2 was implanted for doping. Same B and BF$_2$ implantations were performed into single crystalline silicon to compare the material and electrical characteristics with the preamorphized samples. SIMS measurements for 10KeV B implanted samples revealed the somilar boron distribution for two preamophized cases, but the ASR profiles indicated that the shallower junctions could be formed by Ge preamorphzation. Sheet resostance of Ge preamorphized sample was lower than the As preamorphized sample, and the diode leakage current characteristics were similar for the preamorphized and non-preamorphized samples. Among the samples implanted with BF ions into the substrates preamorphized with 25keV Ge or As ions, high sheet resistance and leaky diode characteristics were observed for the As preamorphized samples. It was found that Ge preamorphization is more useful than As preamorphization for the purpose of forming shallow $p^+$ -n junctions using low energy BF$_2$ implantation.

N$^{+}$poly gate NMOSFETs and p$^{+}$ poly gate (surface type) PMOSFETs with three different gate oxides(SiO2, NO, and ONO) were fabricated. The rapid thermal nitridation and reoxidation techniques have been applied to gate oxide formation. The current drivability of the ONO NMOSFET shows larger values than that of the SiO2 NMOSFET. The snap-back occurs at a lower drain voltage for SiO$_2$ cases for ONO NMOSFET. Under the maximum substrate current bias conditions, hot-carrier effects inducting threshold voltage shift and transconductance degradation were investigated. The results indicate that ONO films exhibit less degradation in terms of threshold voltage shift. It was confirmed that the ONO samples achieve good improvement of hot-carrier immunity. In a SiO$_2$ SC-PMOSFET, with significant boron penetration, it becomes a depletion type (normally-on). But ONO films show excellent impurity barrier properties to boron penetration from the gate.

This paper presents the 1.5\ulcorner PSA bipolar device which establishes the performance improvement such as the reduction of emitter resistance and substrate junction capacitance. To achieve the above electrical characteristics, RTA process and trench isolation technology were adapted. The emitter resistance and substrate capacitance of npn transistor having 1.5$[\times}6{\mu}m^{2}$emitter area was measured with 63$\Omega$and 28fF, respectively. The minimum propagation delay time shows 121ps at 0.7mW from the measurement of 31 stage ring oscillator.

The computer aided analysis is performed to investigate the influence of physical parameters (thickness and doping concentration, etc.) in the window, emitter, base on the efficiency characteristics of a uniformly doped hetroface cell. A field aided heteroface cell is newly designed on a basis of optimum data obtained from the theoretical analysis. The field aided heteroface cell fabricated using MOCVD exhibits a total/active area conversion efficiency of EFF. (tot) = 18.9% /EFF. (act.) = 21.4% under the natural incident light of 56.2 mW/cm\ulcorner having a low series resistance of Rs = 0.94 \ulcornercm\ulcornerand a high spectral response of S.R. (ext) > 90% in a range of $7700{\AA}$ < $8500{\AA}$.

In this paper, an algorithm for automatic schematic generation which creates schematic diagram from netlist are proposed. The important objectives on schematic generation are readability and clarity of resulting schematics. Each stage of generation should aim at enhancing these objectives. For this reason, schematic generation problem is divided into 5 subproblems` preprocessing, logical placement, pin assignment and improvement of placement, global routing, and detailed routing. The algorithm is implemented in C language, and it generates schematics from the results of logic synthesis in order to make it east for designers to understand the design and reflect their knowledge into design.