In this paper, we analyzed the performances for FH/CPFSK system with limiter-discriminator detection and integrate-and-dump post-detection filtering under thermal noise and partial-band jamming noise. And,we considered intersymbol interference-related SNR and differential phase parameters for all eight of the possible adjacent bit data patterns, FM noise clicks for evaluating FH/CPFSK and CPFSK Systems. In result, the optimum modulation index h was 0.7 and the optimum value of bandwidth-time product D was 1.0 Next, when we considered the thermal noise under the partial-band jamming, the thermal noise significantly influenced the error probability of system below 20dB approximately but could ignore above 20dB.

Two protocols inclouding the receiver collision avoidance function are proposed for high-speed optical fiber LANs with finite users. The basic idea to avoid receiver collision is the grouping of destination nodes by the number of channels and it is accomplished in the architecture with or without one separate control channel. While the protocol with a control channel requires a tunable optical transmitter, a fixed optical transmitter and two fixed optical receiver, the other protocol requires a tunable optical transmitter and one fixed optical receiver. The performance of two receiver collision avoidance protocols is computed and analyzed under various system parameters. The numerical results show that the receiver collision avoidance protocol has better performance for a small load than the protocol without receiver collision avoidance.

We express fundamental second-order and third- order harmonic distortions and intermodulation distortions in terms of the laser parameters. Compared to the Darcie `s result only limited to the high frequency (f >1GHz), these expression are quite valid in the entire modulation frequency region. It is found that the fundamental nonlinear distortions are strongly effected by the spontaneous emission to lasing mode as well as the gain compresion damping in the low frequency region.

An inversion technique, by using an improved Born inversion and an iterativeprocess in cross borehole structure, is suggested to reconstruct relative permittivity rofiles of cylindrical scatterer. The degraded image resulting from the violation of the Born conditionand the restriction of measured structure is an improved by improved Borninversion and an iterative rocess,respectively. The simulation results show that this inversion technique give betterreconstruction of original rofile distribution than a conventional Bornor an improved Born technique.

In this paper, An inversion technique to reconstruct permittivity profiles of 2-D inhomogeneous dielectric objects by iterativeprocess using the moment-methodand improved newton's algoritham is presented. In order to reduce the noise effect in the scattered fieldon the reconstructed permittivity profiles, the cell size of inversescattering is made be larger than that of forward scattering. Performing numerical calculations of dielectric scatterer it is demonstrated that this inversion is able to reconstruct dielectric objectshaving large size and inhomogeneous characteristics, which is insentive tothe noise effect in the scattered field on the reconstructed result.

The analysis of the two-tone intermodulation distortion of multistage two-ports with gain and mismatching losses is presented with simplified two-port analyses and statistical viewpoint. The uncertainty obtained from unknown phase angles of the intermodulation distortion signals to the system designer is reduced using stochastic process, hence improving the accuracy of the solution. Based on the dc power dependance of third-order intercept point of each stage, the new efficient method for improving the total intercept point is also suggested with only the relation of dc power and available power gain criteria. Experimental verification on specific amplifiers used for cellular mobile communication comparing predicted and measured intercept points for various power conditions is presented.

In this paper, It was designed the 2.8GHz local oscillator which convert 14.5 14.8GHz uplink frequency to 11.7 12.0GHz downlink frequency by the receiving mixer on the communication satellite transponder according to the rating of domestic satellite. Mukunghwa 1. To prevent the variation of the communication channel bandwidth, it needs a high stability and low phase noise characteristics. So we designed to get the target frequencey by multipling the output signal from the crystal oscillator. We got the simplicity of the circuit by manufacturing the X4 multiplier with transistor which is ordinarily used as a device of a below X3 multiplier for the efficiency.

A new Predistortor that is designed using Feedforward type is proposed to overcome the nonlinearity of HPA (High Power Amplifier). HPA has the nonlinearity of the gain compression and phase distorton, so digital communication system of multi-carrier TDMA needs the linear RF transmitter. Using IMD (Intermodulation Distortion) of drive amplifier, as Feedforward type, the inverse IMD is coupled to the main loop with variable attenuators, phase shifters, and sub-amplifiers well designed. At the input of main amplifier, the over-coupled IMD surpresses the main amplifier 's IMD. Adjusting the level and phase of IMD at the sub loop, C/I of HPA is better than before correction.

Recently, Optical BJTC as a new approach for real-time multi-target tracking has been intensively studied. But the conventional system has some problems in the practical applications such as the false alarm and target missing and low correlation efficiency, and these poor performances are analyzed to be deeply dependent on the binarization method. So, in this paper, a new BJTC system which has the improved performances in target discrimination and diffraction efficiency is suggested, which is based on the JTPS having the same properties with those of the matched filter and new power spectrum binarization method to use effectively the high frequency components of the JTPS signal. Through the computer simulation and some experiments, the performances of the new BJTC tracking system are analyzed and proved to be superior to those of the conventional system baseds on Median method in multi- target tracking problems.

We have studied the effect of channel and/or spacing chirpings on the near field and near field intensity patterns, modal gains and radiation angles of 6 supermodes in the index-guided laser arrays with 6 channels, on the basis of the coupled mode theory. The spacings between channels can be indenpendent parameters for control of the radiation angle. It is found that an asymmetrically v channel-chirped array has both a smaller radiation angle and better supermode discrimination characteristics than a uniform array. Comparing two approaches for enhancing modal stability in point of supermode discrimination characteristics, approach I which increases the coupling cofficient between the outer-most waveguides at each end of an otherwise uniform array, has superior discrimination characteristics to the approach II which increases the propagation constant for the end elements with the same coupling between neighbor elements. Approach III which has a narrower spacing between the outer-most waveguides at one end and a wider channel width of the outer-most waveguide at another end, gets a narrower radiation angle than the approach I and good supermode discrimination characteristics by applying optimized gain profiles.

The junction failure mechanism of W plugs has not been fully understood while the selective W deposition has been widely used for plugging interconnection lines. In this paper, the thermal stability and junction failure mechanism of sub-micron contacts using selective CVD-W plugs were intensively studied with the metal lines of AISiCu, Ti/AISiCu and TiN/AISiCu. The experimental results showed that the contact chain resistance and leakage current in the AISiCu and Ti/AISiCu metallizations were significantly degraded after annealing. From the SEM analysis, it was found that the junction spiking, due to the Al atoms diffusion along the porous interface between selective CVD-W and contactside wall, caused the junction failure. In constast, there was no degradation of the contact resistance and junction leakage current in TiN/AISiCu metal structu-re. It is believed that the TiN barrier layer could prevent AI(Ti) atoms Fromdiffusing. Therefore, TiN barrier between W plug and Al should be used to impro-ve the thermal stability of sub-micron contacts using the selective CVD-W plugs.

The EL lamp have been fabricated by screen printing method. the thickness of BaTiO$_3$ dielectric layer and ZnS:Cu phosphor layer was 20 $\mu$m and 40 $\mu$m, respectively. The threshold voltage of green El lamp was 50 $V_{p-p}$ and the maximum brightness was 13.5 $\mu$ W/cm$^2$ at frequency of 700 Hz and the input voltage of 250 $V_{p-p}$. Also when the Rodamin G6 of 0.02 g was doped, the threshold voltage of white EL lamp was 70 $V_{p-p}$ and the maximum brightness was 34 $\mu$W/cm$^2$.

We have developed a large area ion shower doping system with an RF plasma ion source. The ion current density (i.e., doping concentration) increases with RF power and acceleration voltage. Using this technique, we investigated the optimum condition for ion doping of phosphorus in a-Si:H and poly-Si films. The optimum acceleration voltage and doping time are 6KV and 90sec, respectively, in a-Si:H films. Under this condition the electrical conductivity of ion-doped a-Si:H film is obtained ~10$^{-3}$/cm at room temperature. The sheet resistance decreases witnh acceleration voltage in ion-doped poly-Si, and a heavily-doped layer with a sheet resistance of 920$\Omega$/ㅁ is obtained by using ion doping and subsequent activation.

Silicon flow sensor that can detect the velocity and direction of air flow was designed and fabricated by integrated circuit process and bulk micromachining technique. The flow sensor consists of three-layered dielectric diaphragm, a heater at the center of the diaphragm, and four thermopiles surrounding the heater at each side of diaphragm as sensing elements. This diaphragm structure contributes to improve the sensitivity of the sensor due to excellent thermal isolation property of dielectric materials and their tiny thickness. The flow sensor has good axial symmetry to sense 2-D air flow with the optimized sensing position in the proposed structure. The sensor is fabricated using CMOS compatible process followed by the anisotropic etching of silicon in KOH and EDP solutions to form I$\mu$ m thick dielectric diaphragm as the last step. TCR(Temperature Coefficient of Resistance) of the heater of the fabricated sensors was measured to calculate the operating temperature of the heater and the output voltage of the sensor with respect to flow velocity was also measured. The TCR of the polysilicon heater resistor is 697ppm/K, and the operating temperature of the heater is 331$^{\circ}C$ when the applied voltage is 5V. Measured sensitivity of the sensor is 18.7mV/(m/s)$^{1/2}$ for the flow velocity of smaller than 10m/s.

We examine the conventional method of measuring the internal optical loss using the dependence of the reciprocal external quantum efficiency on the cavity length in laser diodes. It is shown that the implicit assumption of constant internal differential quantum efficiency ${\eta}_{id}$, which has been customarily misinterpreted as internal quantum efficiency ${\eta}_{i}$, is not valid for devices with short cavity length. Therefore, for reliable measurments long cavity data should be used.

Doping effects and semiconductor behaviors of the dispersed p- and n-Si, p- and n- GaAs particles in the aqueous electrolyte have been studied using microelectrophoretic, voltammetric and chronoamperometric techniques. The cations (K$^{+}$) are adsorbed on both the p- and n- Si particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are negatively charged acceptor states. On the other hand, the anions (CI$^{-}$) are adsorbed on both the p- and n- GaAs particle surfaces regardless of the sign of space charges in the depletion layers, i.e. doping profiles. The surface states are positively charged donor states. Under the same conditions, electrophoretic mobilities, electrochemical processes, doping effects and related semiconductor behaviors of the Si and the GaAs particles are similar regardless of the doping profiles, i. e. dopants and doping concentrations. The doping effects and related semiconductor behaviors of the dispersed p- and n- type semiconductor particles are gradually lost with decreasing dimensions.

A full two-dimensional MOSFET simulator utilizing the Mixed Particle Monte Carlo method is introduced. Particle simulation for both electrons and holes are self-consistently coupled with Poisson 's equation. To demonstrate the performance of the simulator, steady state and transient state solutions of the terminal characteristics and the internal physical quantities are obtained for 0.25$\mu$m MOSFETs with three different structures` conventional single drain, LDD and GOLD MOSFET structures.

This paper Presents an algorithm for synthesis of sequential statements described at RT level VHDL. The proposed algorithm transforms sequential statements in VHDL into data-flow description consisting of concurrent statements by local and global dependency analysis and output dependency elimination. Transformation into concurrent statements makes it possible to reduce the cost of the synthesized hardwares, thus to get optimal synthesis results that will befit the designer 's intention. This algorithm has been implemented on VSYN and experimental results show that more compact gate-level hardwares are generated compared with Power View system from ViewLogic and Design Analyzer from Synopsys.

It is very common in today 's design practice to simulate a big design with a large set of test vectors thereby generating a huge set of data (simulation results) to be analyzed. As the design grows, the simulation results grow and become harder to handled. In this paper, we present algorithms for the compression and regeneration of simulation results. The compression is performed by sampling nets in a circuit. If the user wants to examine the lost part of the data, it is quickly regenerated by applying incremental simulation technique. Experimental results obtained for several practical circuits show that the compression ratio of 10 is easily obtained while maintaining a reasonably fast regeneration of data on a 15.7 MIPS workstation. Using the proposed method we can effectively reduce debug cycle time.