In this paper, we generalize the method to calculate the outage probability in the presence of multiple rayleigh faded cochannel interferences and additive white Gaussian noise. Our result is a computational formula that can be applied with or without Gaussian noise in Rayleigh faded cochannel interferences. Without Gaussian noise, the situation degenerates to usual case of the cochannel interferences. The result can be appiled also in the presence of Gaussian noise with or without cochannel interferences.

We have proposed a new fast serial serch algorithm and a receiver for direct-sequence spead-spectrum acquisition systems and analyzed its perfoemance. This algorithm achieves faster acquisition by more than two times that of existing algorithm. We have derived equations of the mean acquistion time by using moment generating function and direct approach, and presented numerical results.

Electrically-short wire antennas, widely used for mobile communications and EMI measurements, have low rediation efficiency and gain due to the ohmic loss predominant over the radiation power. A very short dipole antenna for wideband EMI measurements has been analyzed using the Method of Moments with the incorporatio of the ohmic loss calculated by the Phenomenological Loss Equivalennce Method(PEM). The calculated results show the rediation gain and efficiency very with the ohmic loss in a wide range of frequencies. Thses results can be effectively used for optimum design of very small antennas and probes for mobile communications and non-disturbing EMI measurements.

A characteristic mode theory for longitudinal slot of arbitrary width in the outer conductor of coaxial waveguide is applied for calculating the characteristic magnetic currents, the characteristic fields, radiation patterns, and the fields evershere(inside and outside the guide, and in the aperture region). Numerical results of the equivalent magnetic currents and the radiation patterns are compared with those obtained by use of the method of moments.

Periodically slotted dielectrically filled paralled-plate waveguide as a leaky wave antenna is analysed for E-polarization case. The homogeneous linear equation whose unknown is the surface current density over the conducting strip is formulated, from which the complex propagation constant is calculated and compared with the previous results. Good correspondence between them is observed. And a method for the radiation pattern is also considered.

In this paper, the CAD program for designing the microwave waveguide narrow-band bandpass filters has been developed by the passband correction method with filter synthesis for the MDR(Microwave Digital Relay) system. Here, the modified double E-plane structures are employed in the filter structure which is analyzed by the variational method. Using the developed CAD program, 0.01dB equi-ripple chebyshev type 6-section bandpass filters used in the MDR system operating nationally is designed at the center frequency of 11.0GHz, fabricated with tunable type and then measured by tuning process. The experimantal results show good agreements with the theoretical results.

In this paper, the variational method are used for the filter analysis methods and a CAD program for the design of the waveguide low-loss bandpass filters using inductive window structures for the VSAT(Very Small Aperture Terminal) system has been developed based on the passband correction method combined with fiter synthesis procedures. Using the developed CAD program, 0.01dB equi-ripple chebyshev type 6-section bandpass filters which are sued in the VSAT system operating nationally are designed for the purpose of the Down-link of 12.75~13.25GHz and the Up-link of 14.0~14.5GHz, fabricated and mesured. The measured results are good agreement woth the theoretical resuls.

The theoretical analysis for AlInAs/GaInAs resonant tunneling diodes (RTDs), which have shown the improved negative differential resistance (NDR) characteristics, has scarcely been made in comparison with AlGaAS/GaAs RTDs. In this paper, the static current-voltage relation of Al$_{0.48}In_{0.52}As/Ga_{0.47}In_{0.53}$As RTDs were numerically estimated by using a self-consistent method. Assuming a simplified RTD with single quantum well structure and spacer layers, the peak current density (J$_{P}$) and the peak-to-valley current ratio (PVCR) were analysed as the function of the thickness of the well, the barrier and the spacer layer, and temperature. As the results, the peak current density and the peak-to-valley current ratio indicated a reciprocal relation roughly in respect to the thicknesses of the well and the barrier, and it was theoretically predicted that it be not attainable to provide a high peak current desity (J$_{P}$) over 1${\times}10^{5}A/cm^{2}$ as well as the large peak-to-valley current ratio (PVCR) over 10 that were the the critical conditions for the practical use.

Polysilicon capacitors with pyrogenic oxide and TEOX oxide as insulators were fabricated to develop capacitors which can be applied to analog CMOS IC, and the characteristics of the capacitors were compared with each other. The morphology of bottom polysilicon in pyrogenic oxide capacitor is degraded due to the generaged protuberances of the polysilicon grain during oxidataion. The polysilican capacitor with pyrogenic oxide of 57 nm thickness showed that the effective potential barrier height of 0.45 eV is much less than that of MOS capacitor (3.2 eV)when the top electrode is biased with a positive volgate. The morphology of the polysilicon capacitor with TEOS oxide, however, was not degraded during oxide deposition by LPCVD. The polysilicon capacitor with TEOS oxide of 54 nm thickness showed the effective potential barrier height of 1.28 eV when the top electrode is biased with a negative voltage. Therefore, it is concluded that the polysilicon capacitor with TEOS oxide is more applicable to analog CMOS IC than the pyrogenic oxide polysilicon capacitor.

A new device structure has been developed for p-i-n switches. In this structure, the phosphorus-diffused n$^{+}$ layter adjacent to the boron-doped anode is used to short the p$^{+}$ anode-channel(i-region). This change in the anode electrode structure results in a significant improvement in the threshold voltage-to-holding voltage($V_{Th}/V_{h}$) ratio, which is due to the suppression of the hold injection from the anode by the n$^{+}$ layer. The shorted anode p-i-n devices of a 100 .mu.m channel length show an extremely high threshold voltage in the 250~300 V range and a low holding voltage in the 5~9 V range. These features of the device are expected to acdelerate their practical application to power switching circuits.

We studied the effects of the Zr/Ti ration and the bottom electrode (Pt or ITO) on the electrical properties of PZT thin films prepared by sol-gel method. Their permittivities and tagent losses with the variation of frequencies were measured by the LCR meter and their maximum polarizations, remanent polarizations, and coercive fields were obtained from the hysteresis loops measured by the Sawyer-Tower circuit. For the PZT thin film of the Zr/Ti ration of 53/47, permittivity at 10kHz, coercive field, maximum and remanent polarizations ere measured as 952, 20.7kV/cm, 10.43${\mu}C/cm^{2}$ and 4.3${\mu}C/cm^{2}$, respectively. For the film of the Zr/Ti ration of 25/75, coercive field, maximum and remanent polarizations were measured as 33.12kV/cm, 5.59${\mu}C/cm^{2}$ and 1.5${\mu}C/cm^{2}$, respectively. For the film of the Zr/Ti ratio of 75/25, they were measured as 23.8kV/cm, 7.45${\mu}C/cm^{2}$, and 3.5${\mu}C/cm^{2}$, repectively. Our investigation into the effects of the lower electrode on the electrical properties of PZT films showed the following results. The permittivities of the PZT films deposited on the ITO electrode decreased more quickly than those of the PZT films on the Pt electrode. The tangent losses of the former films increased more quickly than those of the latter. These may be due to the degradation of the quality of the interface between the electrode and the film, which results from the diffusion of Pb. It is also noticeable that permittivities and tangent losses of the PZT films deposited on the ITO electrode varied differently with the Zr/Ti ratio. This may indicate that the quality of the interface between the electrode and the film changes with the Zr/Ti ration of the PZT film.

In this study, phthalocyanine thin films were prepared by vacuum sublimation method and investigated sensing characteristics of the films. The phthalocyannies used for the prepaation of the NO$_{x}$ sensors were metal-free Pc(H$_{2}$Pc) and metal Pc(CuPc, CoPc, PbPc). And the substrate temperatures maintained during the fomation of Pc films were varied between R.T. and 200$^{\circ]C$, and the base pressure was 5${\times}10^{6}$ torr. The relationships between NO$_{2}$ sensing properties and SEM analyses as a function of substrate temperatures during the formation of the films were investigated. Among the Pc films, PbPc film showed the best sensing characteristics. Particularlly, the PbPc films prepared at 70$^{\circ]C$ of the substrage temperature showen good sensitivity of 85% to 1ppm NO$_{2}$ gas at operating temperature 190$^{\circ]C$ and response time was about 24 seconds.

Thin film acoustooptic beam deflector in proton-exchanged Y-cut LiNbO$_{3}$ was fabricated and measured. The planar waveguide was fabricated by using the proton-exchanged and annealing method in Y0cut LiNbO$_{3}$. Interdigital transducer for SAW(surface acoustic wave) was made by the laser lithography. Using above method, the thin film acoustooptic beam deflector was constructed. Its SAW wavelength was 20.mu.m at 174MHz center frequency. The interaction length between guided optical wave and SAW was 2.16mm. The measured 3dB bandwidth was 17MHz using He-Ne laser. And 70% diffraction efficiency was obtained at 970mW RF driving power.

In this paper, an intermediate representation HSFG(Hanyang Sequential Flow GRaph) and a new scheduling algorithm for the control-dominated ASIC design is presented. The HSFG represents control flow, data dependency and such constraints as resource constraints and timing constraints. The scheduling algorithm minimizes the total operating time by reducing the number of the constraints as maximal as possible, searching a few paths among all the paths produced by conditional branches. The constraints are substitute by subgraphs, and then the number of subgraphs (that is the number kof the constraints) is minimized by using the inclusion and overlap relation among subgraphs. The proposed algorithm has achieved the better results than the previous ones on the benchmark data.

This paper presents the simulation environment that verifies whether a new microprocessor described with HDL is compatible with MS-DOS. The phrase 'compatible with MS-DOS' means that the microprocessor can execute MS-DOS without any modification of MS-DOS's binary code. The proposed verification environment consists of HDL simulator and user interface module. And the communications between them are performed by using sockets which UNIXprovide. The HDL simulator is equipped with several functions, which use PLI to emulate ROM-BIOS facilities. The ROM-BIOS emulation routine is described by using these functions. User interface module utilizes S/MOTIF and participates in emulating PC monitor and keyboard. The verification environment is tested by executing the MS-DOS commands (DIR, FORMAT, DATE, TIME etc.) with the HDL model of microprocessor, and the display of user interface module verifies that the environment works correctly. In this paper, the method of constructing the verification environment is presented, and the simulation results are summarized.