Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication and Characterization of Photo-Sensors for Very Small Scale Image System

초소형 영상시스템을 위한 광센서 제조 및 특성평가

  • 신경식 (한국과학기술연구원 정보재료.소자연구센터) ;
  • 백경갑 (대진대학교 전자공학과) ;
  • 이영석 (청운대학교 전자공학과) ;
  • 이윤희 (한국과학기술연구원 정보재료.소자연구센터) ;
  • 박정호 (고려대학교 전자공학과) ;
  • 주병권 (한국과학기술연구원 정보재료.소자연구센터)
  • Published : 2000.04.22
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Abstract

We fabricated general photo diode, surface etched photo diode and floating gate MOSFET by CMOS process. In a design stage, we expect that surface etched photo diode will be improved as to photo sensitivity. However, because the surface of silicon was damaged in etching process, the surface etched diode had a high dark current as well as low photo current level. Finally, we examined the current-voltage properties for the floating gate MOSFET on n-well and confirmed that the device can be act as an efficient photo-sensor. The floating gate MOSFET was operated in parasitic bipolar transistor mode.

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