Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

The characteristics of photoinduced birefringence in chalcogenide As-Ge-Se-S thin films

비정질 칼코게나이드 As-Ge-Se-S 박막에서 광유기 복굴절 특성

  • Jang, Sun-Joo (Dept. of Electronic Materials Eng., Division of Electronic & Information Communication Engineering, Kwangwoon University) ;
  • Park, Jong-Hwa (Dept. of Electronic Materials Eng., Division of Electronic & Information Communication Engineering, Kwangwoon University) ;
  • Son, Chul-Ho (Dept. of Electronic Materials Eng., Division of Electronic & Information Communication Engineering, Kwangwoon University) ;
  • Yeo, Cheol-Ho (Dept. of Electronic Materials Eng., Division of Electronic & Information Communication Engineering, Kwangwoon University) ;
  • Park, Jeong-Il (Dept. of Electronic Materials Eng., Division of Electronic & Information Communication Engineering, Kwangwoon University) ;
  • Lee, Young-Jong (Dept. of Electronic Eng., YeoJoo Institute of Technology) ;
  • Chung, Hong-Bay (Dept. of Electronic Materials Eng., Division of Electronic & Information Communication Engineering, Kwangwoon University)
  • 장선주 (광운대학교 전자,정보통신공학부 전자재료공학과) ;
  • 박종화 (광운대학교 전자,정보통신공학부 전자재료공학과) ;
  • 손철호 (광운대학교 전자,정보통신공학부 전자재료공학과) ;
  • 여철호 (광운대학교 전자,정보통신공학부 전자재료공학과) ;
  • 박정일 (광운대학교 전자,정보통신공학부 전자재료공학과) ;
  • 이영종 (여주대학 전자공학과) ;
  • 정홍배 (광운대학교 전자,정보통신공학부 전자재료공학과)
  • Published : 2000.04.22
Download PDF
⟨ Previous Next ⟩

Abstract

In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as a pumping beam and a semiconductor laser at 780nm as a probing beam. The PB for the variable thickness of thin films was investigated. The thickness of the thin films is about $0.4{\mu}m$, $0.92{\mu}m$, $1.4{\mu}m$, $2.0{\mu}m$, respectively. The experimental result of PB in chalcogenide thin films was represented higher PB in the thickness of thin film, $0.92{\mu}m$. It was meant to represent higher PB in the thickness of the film that was made closely the optimal thickness, $0.96{\mu}m$. The optimal thickness of thin film, $0.96{\mu}m$ was calculated by the penetration depth of the pumping light Also, the PB in thickness of $0.92{\mu}m$ was obtained almost two times higher 0.15 than other thickness of thin films.

Keywords