• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.293-294
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• 2014

본 논문에서는 MOS 커패시터를 이용하여 12비트 1MSps 연속 근사화 레지스터 아날로그-디지털 변환기(Successive Approximation Register Analog-to-Digital Converter, SAR ADC)를 설계하였다. 설계된 아날로그-디지털 변환기는 매그나칩/SK하이닉스 $0.18{\mu}m$ 공정을 이용하였으며, Cadence Tool을 이용하여 시뮬레이션 및 레이아웃을 하였다. 시뮬레이션 결과 1.8V의 공급전압에서 전력 소모는 3.22mW였고, 유효 비트수는 11.5bit의 결과를 보였다.

• Journal of Semiconductor Engineering
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• v.1 no.3
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• pp.81-87
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• 2020

An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.

• Journal of Semiconductor Engineering
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• v.2 no.1
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• pp.99-108
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• 2021

Successive Approximation Register (SAR) Analog-to-Digital Converters (ADC) seem to become the hottest ADC architecture during the past decade in implementing energy-efficient high performance ADCs. In this overview, we will review what kind of circuit techniques and architectural advances have contributed to place the SAR ADC architecture at its current position, beginning from a single SAR ADC and moving to various hybrid architectures. At the end of this overview, a recently reported compact and high-speed SAR-Flash ADC is introduced as one design example of SAR-based hybrid ADC architecture.

• Journal of Sensor Science and Technology
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• v.33 no.3
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• pp.134-138
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• 2024

In this study, we propose a ternary D flip-flop using tristate ternary inverters for an energy-efficient ternary circuit design of sequential logic. The tristate ternary inverter is designed by adding the functionality of the transmission gate to a standard ternary inverter without an additional transistor. The proposed flip-flop uses 18.18% fewer transistors than conventional flip-flops do. To verify the advancement of the proposed circuit, we conducted an HSPICE simulation with CMOS 28 nm technology and 0.9 V supply voltage. The simulation results demonstrate that the proposed flip-flop is better than the conventional flip-flop in terms of energy efficiency. The power consumption and worst delay are improved by 11.34% and 28.22%, respectively. The power-delay product improved by 36.35%. The above simulation results show that the proposed design can expand the Pareto frontier of a ternary flip-flop in terms of energy consumption. We expect that the proposed ternary flip-flop will contribute to the development of energy-efficient sensor systems, such as ternary successive approximation register analog-to-digital converters.

• Journal of IKEEE
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• v.22 no.4
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• pp.1012-1018
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• 2018

In this paper, CMOS SAR (Successive Approximation Register) A/D converter with 1.8V supply voltage is designed for IoT sensor processing. This paper proposes design of a 12-bit SAR A/D converter with two A / D converters in parallel to improve the sampling rate. A/D converter1 of the two A/D converters determines all the 12-bit bits, and another A/D converter2 uses the upper six bits of the other A/D converters to minimize power consumption and switching energy. Since the second A/D converter2 does not determine the upper 6 bits, the control circuits and SAR Logic are not needed and the area is minimized. In addition, the switching energy increases as the large capacitor capacity and the large voltage change in the C-DAC, and the second A/D converter does not determine the upper 6 bits, thereby reducing the switching energy. It is also possible to reduce the process variation in the C-DAC by proposed structure by the split capacitor capacity in the C-DAC equals the unit capacitor capacity. The proposed SAR A/D converter was designed using 0.18um CMOS process, and the supply voltage of 1.8V, the conversion speed of 10MS/s, and the Effective Number of Bit (ENOB) of 10.2 bits were measured. The area of core block is $600{\times}900um^2$, the total power consumption is $79.58{\mu}W$, and the FOM (Figure of Merit) is 6.716fJ / step.

• IEIE Transactions on Smart Processing and Computing
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• v.4 no.3
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• pp.189-193
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• 2015

This paper provides the design techniques of a successive approximation register (SAR) type 12b analog-to-digital converter (ADC) for distributed maximum power point tracking (DMPPT) control in a photovoltaic system. Both a top-plate sampling technique and a $V_{CM}$-based switching technique are applied to the 12b capacitor digital-to-analog converter (CDAC). With these techniques, we can implement a 12b SAR ADC with a 10b capacitor array digital-to-analog converter (DAC). To enhance the accuracy of the ADC, a single-to-differential converted DAC is exploited with the dual sampling technique during top-plate sampling. Simulation results show that the proposed ADC can achieve a signal-to-noise plus distortion ratio (SNDR) of 70.8dB, a spurious free dynamic range (SFDR) of 83.3dB and an effective number of bits (ENOB) of 11.5b with bipolar CMOS LDMOD (BCDMOS) $0.35{\mu}m$ technology. Total power consumption is 115uW under a supply voltage of 3.3V at a sampling frequency of 1.25MHz. And the figure of merit (FoM) is 32.68fJ/conversion-step.

• IEIE Transactions on Smart Processing and Computing
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• v.4 no.3
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• pp.183-188
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• 2015

A 10-bit 10MS/s low power consumption successive approximation register (SAR) analog-to-digital converter (ADC) using a straightforward capacitive digital-to-analog converter (DAC) is presented in this paper. In the proposed capacitive DAC, switching is always straightforward, and its value is half of the peak-to-peak voltage in each step. Also the most significant bit (MSB) is decided without any switching power consumption. The application of the straightforward switching causes lower power consumption in the structure. The input is sampled at the bottom plate of the capacitor digital-to-analog converter (CDAC) as it provides better linearity and a higher effective number of bits. The comparator applies adaptive power control, which reduces the overall power consumption. The differential prototype SAR ADC was implemented with $0.18{\mu}m$ complementary metal-oxide semiconductor (CMOS) technology and achieves an effective number of bits (ENOB) of 9.49 at a sampling frequency of 10MS/s. The structure consumes 0.522mW from a 1.8V supply. Signal to noise-plus-distortion ratio (SNDR) and spurious free dynamic range (SFDR) are 59.5 dB and 67.1 dB and the figure of merit (FOM) is 95 fJ/conversion-step.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.4
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• pp.300-308
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• 2010

This paper describes the development of a low-power electrocardiogram (ECG) touch sensor intended for the use with two dry metal electrodes. An equivalent ECG extraction circuit model encountered in a ground-free two-electrode configuration is investigated for an optimal sensor read-out circuit design criteria. From the equivalent circuit model, (1) maximum sensor resolution is derived based on the electrode's background thermal noise, which originates from high electrode-skin contact impedance, together with the input referred noise of instrumentation amplifier (IA), (2) 60 Hz electrostatic coupling from mains and motion artifact are also considered to determine minimum requirement of common mode rejection ratio (CMRR) and input impedance of IA. A dedicated ECG read-out front end incorporating chopping scheme is introduced to provide an input referred circuit noise of 1.3 ${\mu}V_{rms}$ over 0.5 Hz ~ 200 Hz, CMRR of IA > 100 dB, sensor resolution of 7 bits, and dissipating only 36 ${\mu}W$. Together with 8 bits synchronous successive approximation register (SAR) ADC, the sensor IC chip is implemented in 0.18 ${\mu}m$ CMOS technology and integrated on a 5 cm $\times$ 8 cm PCB with two copper patterned electrodes. With the help of proposed touch sensor, ECG signal containing QRS complex and P, T waves are successfully extracted by simply touching the electrodes with two thumbs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.504-510
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• 2015

This paper presents a power and area efficient SAR ADC for multi-channel near threshold-voltage (NTV) applications such as neural recording systems. This work proposes a split dual-capacitive-array (S-DCA) structure with shifted input range for ultra low-switching energy and architecture of multi-channel single-ended SAR ADC which employs only one comparator. In addition, the proposed ADC has the same amount of equivalent capacitance at two comparator inputs, which minimizes the kickback noise. Compared with conventional SAR ADC, this work reduces the total capacitance and switching energy by 84.8% and 91.3%, respectively.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.2
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• pp.355-358
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• 2010

As CMOS technology continues to scale down, signal processing is favorably done in the digital domain, which requires Analog-to-Digital (A/D) Converter to be integrated on-chip. This paper presents a design methodology of 12-bit 1-MS/s Rail-to-Rail fully differential SAR ADC using Deep N-well Switch based on binary search algorithm. Proposed A/D Converter has the following architecture and techniques. Firstly, chip size and power consumption is reduced due to split capacitor array architecture and charge recycling method. Secondly, fully differential architecture is used to reduce noise between the digital part and converters. Finally, to reduce the mismatch effect and noise error, the circuit is designed to be available for Rail-to-Rail input range using simple Deep N-well switch. The A/D Converter fabricated in a TSMC 0.18um 1P6M CMOS technology and has a Signal-to-Noise-and-Distortion-Ratio(SNDR) of 69 dB and Free-Dynamic-Range (SFDR) of 73 dB. The occupied active area is $0.6mm^2$.