Recent Advances in Radiation-Hardened Sensor Readout Integrated Circuits |
Um, Minseong
(School of Electrical Engineering, Korea University)
Ro, Duckhoon (School of Electrical Engineering, Korea University) Kang, Myounggon (Department of Electronics Engineering, Korea National University of Transportation) Chang, Ik Joon (Department of Electronic Engineering, Kyung Hee University) Lee, Hyung-Min (School of Electrical Engineering, Korea University) |
1 | V. Martin, L. Bertalot, J.M. Drevon, R. Reichle, S. Simrock, G. Vayakis, M. Walsh, J. Verbeeck, Y. Cao, and M. Van Uffelen, "Electronic components exposed to nuclear radiation in ITER diagnostic systems: Current investigations and perspectives", In Proceedings of the EPS Conference on Plasma Diagnostics (ECPD), Frascati, Italy, pp. 1-7, Apr. 2015. |
2 | J. Verbeeck, Y. Cao, M. Van Uffelen, L.M. Casellas, C. Damiani, E.R. Morales, R.R. Santana, R. Meek, B. Hais, and D. Hamilton, "Qualification method for a 1 MGy-tolerant front-end chip designed in 65 nm CMOS for the read-out of remotely operated sensors and actuators during maintenance in ITER", Fusion Eng. Des., Elsevier, 1002-1005, 2015. |
3 | P. Leroux, W. Van Koeckhoven, J. Verbeeck, M. Van Uffelen, S. Esque, R. Ranz, C. Damiani, and D. Hamilton, "Design of a MGy radiation tolerant resolver-to-digital convertor IC for remotely operated maintenance in harsh environments", Fusion Eng. Des., Elsevier, 2314-2319, 2014. |
4 | H. J. Barnaby, "Total-Ionizing-Dose Effects in Modern CMOS Technologies", IEEE Trans. Nucl. Sci., vol. 53, no. 6, pp. 3103-3121, Dec. 2006. DOI |
5 | T. L. Turflinger, "Single-event effects in analog and mixed-signal integrated circuits", IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 594-602, Apr. 1996. DOI |
6 | N. F. Haddad et al., "Incremental Enhancement of SEU Hardened 90 nm CMOS Memory Cell," IEEE Trans. Nucl. Sci., vol. 58, no. 3, pp. 975-980, Jun. 2011. DOI |
7 | L. T. Clark, K. C. Mohr, K. E. Holbert, X. Yao, J. Knudsen, and H. Shah, "Optimizing Radiation Hard by Design SRAM Cells", IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2028-2036, Dec. 2007. DOI |
8 | U. Gatti, C. Calligaro, E. Pikhay and Y. Roizin, "Radiationhardened techniques for CMOS flash ADC", IEEE International Conference on Electronics, Circuits and Systems (ICECS), Marseille, pp. 1-4, Dec. 2014. |
9 | K. Jeong, D. Ro, M. Kang, and H.-M. Lee, "A Radiation-Hardened Instrumentation Amplifier for Sensor Readout Integrated Circuits in Nuclear Fusion Application", MDPI Electronics, Dec. 2018. |
10 | D. Ro, C. Min, M. Kang, I.J. Chang, and H.-M. Lee, "A Radiation-Hardened SAR ADC with Delay-Based Dual Feedback Flip-Flops for Sensor Readout Systems", MDPI Sensors, Jan. 2020. |
11 | L.D.T. Dang, J.S. Kim, and I.J. Chang, "We-Quatro: Radiation-hardened SRAM cell with parametric process variation tolerance", IEEE Trans. Nucl. Sci. 2017, 64, 2489-2496. DOI |
12 | M. Omana, D. Rossi, and C. Metra, "Latch Susceptibility to Transient Faults and New Hardening Approach", IEEE Trans. Comput., 56, 1255-1268, 2007. DOI |
13 | Y.J. Jeong, J. Jeon, S. Lee, M. Kang, H. Jhon, H.J. Song, C.E. Park, and T.K. An, "Development of organic semiconductors based on quinacridone derivatives for organic field-effect transistors: High-voltage logic circuit applications", IEEE J. Electron Devices Soc., 5, 209-213, 2017. DOI |
14 | M. Kang, K. Lee, D.H. Chae, B.-G. Park, and H. Shin, "The compact modeling of channel potential in sub-30-nm NAND flash cell string", IEEE Electron Device Lett., 33, 321-323, 2012. DOI |
15 | M. Kang, I.H. Park, I.J. Chang, K. Lee, S. Seo, B.-G. Park, and H. Shin, "An accurate compact model considering direct-channel interference of adjacent cells in sub-30-nm NAND flash technologies", IEEE Electron Device Lett., 33, 1114-1116, 2012. DOI |
16 | X. Xi, M. Dunga, J. He, W. Liu, K.M. Cao, X. Jin, J.J. Ou, M. Chan, A.M. Niknejad, and C. Hu, "BSIM4.3.0 MOSFET Model, User's Manual", Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA, 2003. |
![]() |