An integrated waveguide optical isolator by wafer direct bonding has been studied. The isolation ratio was found to be 2.9dB in our device. We found that wafer direct bonding between the InP and GGG is effective for the integration of a waveguide optical isolator.

The $H_{EB}$ was investigated for exchange coupling $20\;{\AA}\;Fe/x\;{\AA}\;NiO\;(type-I samples)$, $20\;{\AA}\;Fe/x\;{\AA}$ nonmagnetic layer $(MgO, Ag, Cu)/(500-x{\AA})$ NiO (type-II smaples). In type-I samples, the $H_{EB}$ is long-range coupling when looking from the point of view of the AFM. The $H_{EB}$ consistent with a generalized Meiklejohn-Bean approach. The critical thickness, which $H_{EB}$ is observed, is $130\;{\AA}$. In type-II samples, MgO layer more decouples the thin interfacial NiO from bottom NiO than other nonmagnetic layer. Nd the decoupling of Ag smallest. This means that the Ag layer has strong coupling the thin interfacial NiO with bottom NiO.

Superparamagnetic regions and magnetic anisotropic properties in randomly orientated Co nano dots(NDs) were investigated as a function of dot diameter, spacing, and density. The Co NDs were fabricated by intentionally exposing a laser source on ultra thin film. Various dot sizes are ultimately realized by changing laser power, scan condition, and intial film thickness. Magnetic hysteresis loops, angle-dependent magnetization, and temperature dependence magnetization of the Co NDs were measured with a superconducting quantum interference device. The analysis of magnetization and hysteresis loops was effectively used to determine superparamagnetic regions of the Co NDs. Up to now, the experimentally observed results repeal that room temperature superparamagnetic limit of our Co NDs was about 30 nm in diameter, with the confirmation of high resolution transmission electron microscope.