In this study, the fundamental properties of $M_xP$ (M = Ti, V, Fe; x = 2, 3) binary compounds were investigated in terms of the FLAPW method within GGA. The calculated lattice parameters are well consistent with experimental values. Among considered systems, only the FM state of $Fe_xP$ compounds found to be more stable compared to the NM one. Discussion on the fundamental properties of $M_xP$ ternary compounds also will be given.

전류센서는 전기차 시대의 도래와 함께 전기차의 주용 부품으로써, 차량용 전기가 충방전하는 동안의 전류의 흐름을 측정하고, 전지관리시스템이 모니터링하는 목적으로 사용되어 진다. 본 논문은 Hall-effect를 이용하여 전류에 의해 의기된 자장이 자성코어에 집중되어 코어의 공극에서 측정되도록 전류센서를 구성하였다. 공극간의 자속을 측정하기 위하여, GaAs 게열의 Hall 센서가 사용되었다. 본 논문이 제안하는 센서는 측정 결과, 출력 특성의 선형성과 온도 안정성이 우수한 것으로 나타났다. 이는 제안된 전류센서가 산업용으로 적용이 가능함을 보여준다.

In summary, the BLS experiments was applied to investigate the magnetic properties of $Co_{40}Fe_{40}B_{20}$ thin films. We find that the exchange stiffness constant decrease with increasing Ar gas pressure.

Iron-excess gallium ferrite, $Ga_{0.6}Fe_{1.4}O_3$ (GFO), is known to have room-temperature ferromagnetic phases and potentially exhibit ferroelectricity as well [1]. But, leaky polarization-electric field (PE) hysteresis curves of the GFO thin film are hurdle to prove its spontaneous polarization, in other words, ferroelecticity. One of the reasons that the GFO films have leaky PE hysteresis loop is carrier hopping between $Fe^{2+}$ and $Fe^{3+}$ sites due to oxygen deficiency. We focus on reducing conducting current by substituting divalent cations at $Fe^{2+}$ sites. GFO thin films were grown epitaxially along b-axis normal to $SrRuO_3/SrTiO_3$ (111) substrates by pulsed laser deposition. Current density of the ion-substituted GFO thin films was reduced by $10^3$ or more. Ferroelectric properties of the ion-substituted GFO thin films were measured using macroscopic and microscopic schemes. In particular, local ferroelectric properties of the GFO thin films were exhibited and their remnant polarization and piezoelectric d33 coefficient were obtained.