This is the third part of the four-part paper describing the development of a packet-switched computer communication network named the KORNET. In this paper we describe the design and implementation of the X.25 protocol connecting packet mode data terminal equipments(PDTE's) with data circuit terminating equipments(DCE's). In the KORNET, the X.25 protocol has been implemented on the line processing module-A(LPMA) of the network node processor(NNP). In the implementation of X.25, we have divided the software module according to the service function, and have determined the the rules that interact between the modules. Each layer protocol has been developed using the technique of the finite state machine. Before the actual coding of softwares, we hafve used formal software development tools based on the specification and description language (SDL) and program design languate (PDL) recommended by the CCITT. In addition, for the efficient operation of the X.25 protocol system we have analyzed the system performance and the service scheduling method of each module. The results will also be given.

This is the last part of the four-part describing the development of a packet-switched computer communication network named the KORNET. In this paper we describe the design and implementation of the packet assembler/dissassembler (PAD) protocol for the asynchronous channel service, and of the network management softwares. The line processing module-B(LPMB) system supporting the asynchronous line includes a PAD protocol, a packet mode DTE/DCE protocol converting to the X.25 protocol, and the asynchronous receiver/transmitter(ART) software. The network management software is operated in master central processing module(MCPM) which includes virtual circuit management (VCM) managing the user channel, the routing management and the high level protocol for communication between the network management center (NMC) and the network node processor(NNP). In this paper, the design, implementation and operation of the softwares for the above service functions will be described in detail.

In this paper, the Bilateral Fin-Line structure is analyzed by Rayleigh-Ritz variational method including the effects of conductor thickness. Bilateral Fin-Line bandpass filters are realized at X-Band. Experimental results are in good agreement with the theory.

The optical wave interactions in a sinusoidally corrugated dielectric waveguide are analyzed for the oblique incidence case. The coupled mode equations which govern the interactions are derived by the singular perturbation method for the TE-TE mode coupling. The results are compared with those of normal mode analysis by Wagatsuma et al. and total field analysis by Stegeman et al. Phase mismatching effects on the diffraction efficiency are also investigated.

A new microwave wideband frequency discdriminator is described, which is based on the theory of transmission line frequency discriminator known as having the widest bandwidth. It has been realized with microstrip lines and slot lines. It is experimentally verified that the discriminator is linear in a 1.6 GHz bandwidth centered at frequency of 3.2 GHz and has return loss of 20dB or more in that bandwidth.

This paper introduces novel functionally integrated logic elements which are conceptuallized for large scale integrated circuits. Efforts are made to minimize the gate size as well as to reduce the operational voltage, without sacrificing the speed performance of the gates. The process used was a rather conventional collector diffusion isolation(CDI) process. New gate structures are formed by merging several transistors of a gate in the silicon substrate. Thested elements are CML(Current Mode Logic) and EECL (Emitter-to-Emitter Coupled Logic)gates. The obtained experimental results are power-delay product of 6~11pJ and delay time/gate of 1.6~1.8 ns, confirming the possibility of these novel gate structures as a VLSI-candidate.

A 32x32 liquid crystal (LC) flat panel display using two-dimensional array of PMOS switches and capacitors is designed and fabricated. Standard PMOS process was followed to fabricate the switch and capacitor array on silicon wafer, on the top of which guest-host effect liquid crystal was wmployed as an electro-optical material for optical switching and liquid crystal display(LCD) with its external drive circuitry was basically successful. Remaining problems to be solved are improvement of contrast ratio, good surface alignment and uniformity.

The fabricatoin sequence of GaAs MIS type diode and its electrical characteristics are presented. Used wafers were undoped GaAS wafer adn Te-doped GaAs wafer. Au and AuGe/Ni was used as schottky contact metal and ohmic contact metal respectively. Oxide layer on GaAs surface was formed by water vapor saturated oxide growth technique and dry oxidation technique. In Te-doped GaAs wafer, cutin voltage of MIS type diode was enhanced about 3V comparing with non-oxide layer diode. From light I-V characteristics fill factor of MIS type Te-doped GaAs diode was about 64%, Voc(open circuit voltage) was 0.67V.

Experiment have been conducted about thin oxide characteristics according to O2/N2 ratio needed for EEPROM cell fabrication. As a result, we think that there is no problem even if we grow oxide layer with large O2/N2 ratio and short exidation time and when the water is implated by As before oxidation, the oxide breakdown field is about IMV/cm lower than that is not implanted. Especially, the thin oxide characteristic seems to be affected largely by wafer cleaning and oxidation in air. On the basis of these, tunnel type EEPROM cell is fabricated by 3um CMOS process and its characteristic is studied. Tunnel oxide thickness(100\ulcorner is chosen to allow Fowler-Nordheim tunneling to charge the floating gate at the desired programming voltage and tunnel area(2x2um\ulcorneris chosen to increase capacitive coupling ratio. For program operation, high voltage (20-22V) is applied to the control gate, while both drain and source are gdrounded. The drain voltage for erase is 16V. It is shown that charge retention characteristics is not limited by leakage in the oxide and program/erase endurance is over 10E4 cycles of program erase operation.

The elliptic functions have a set of zeros on the jw axis. In acitve realization we decompose a function into product of biquads. In this paper, a simple method of pole-zero pairing is proposed for the enhancement of overall dynamic range. Secondly, the optimum sequencing of individual biquads is developed and it is demonstrated that the commonly accepted sequencing technique does not hold in the case of elliptic functions. This work is an approximation for Leuder's(1970)method.

A micro pH-ISFET probe, which can be applied to the in vivo measurements of the hydrogen ion concentration in blood, has been developed, and a measuring system equiped with this probe also developed. The pH-ISFET has been fatricated by employing the techniques of integrated circuit fabrication. Two kinds of micro electrode formed around the sensing gate during the wafer process, and the other is a capillary type of Ag/AfCl/sat. KCI reduced in size. This capillary electrode has shown its good performance characteristics so far in the application with ISFET as well as a commercial one. In order to form a micro pH-ISFET probe, this pH-ISFET and well as a commercial one. In order to form a micro pH-ISFET probe, this pH-ISFET and the capillary electrode were built together into a needle tip having 1 mm inner diameter. The chip size of a twin pH-ISFET is 0.8 mmx1.4 mm, the material of the sensing gate membrane is Si3N4, and the sensitivity of the developed probe is about 52mV/pH.

The nonlinear rate equations are solved analytically by using the singular perturbation method to study effects of the spontaneous emission factor and the photon lifetime on the primary resonance and the first subharmonic generation(i.e., the onset of the periocd-doubling route to chaos). By large signal modulation of Hitachi CSP laser HLP 1400, the resonance frequency shift than 100 ps with 1 GHz repetition rate are generated. The experimental observations are in reasonable agreement with the theoretical results obtained using measured parameters of the rate equations.

In this paper, a real-time pitch detector LPC vocoder as implemented on a high speed digital signal processor, NEC 7720, is described. The pitch detector was based mainly on the SIFT algorithm. The SIFT pitch detector consists primarily of a digital low pass filter, inverse filter, computation of autocorrelation, a peak picker, interpolation, V/UV defcision and a final pitch smoother. In our approach, modification, mainly on the V/UV decision and a final pitch smoother, was made to estimate more accurate pitches. An 16-bit fixed-point aithmatic was employed for all necessary computation and the simulated results were compared with the eye detected pitches obtained from real speech data. The pitch detector occupies 98.8% of the instruction ROM, 37% of the data ROM, and 94% of internal RAM and takes 15.2ms to estimate a pitch when an analysis frame is consisted of 128 sampled speech data. It is observed that the tested results were well agreed with the computer simulation results.

In this paper, an algorithm for the on-line recognition of handwritten Hangeul is proposed. The strokes are recognized by the minimum distance parser. The phonemes are separated by the finite-state automata resulted from the state graph of phonemes which are produced by the order of strokes. By simulation result for 3,000 characteristics in practical sentences, the recognition rate of strokes is obtained to be 98.5% and the separation rate of phonemes is obtained to be 92.5%.

Data analysis methods in lock-in amplifier based DLTS systems were discussed with regards to the signal-to-noise ratio and improvement of resolution of DLTS spectrum. The DLTS system based on wideband two-phase lock-in amplifier is shown to be the most preferabe for the studies in deep levels of low concentration. A single-temperature scanning DLTS methods in lock-in amplifier based system with the improved sensitivity is proposed. The method is tested on the characterization of deep levels in n-GaAs.