Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication of MIS Type GaAs Diode and Its Electrical Characteristics

GaAs를 이용한 MIS형 다이오드의 제작 및 전기적 특성

  • 鄭期太 (慶北大學校 電子工學科) ;
  • 鄭鎬宣 (廛北大學校 電子工學科)
  • Published : 1986.01.01
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Abstract

The fabricatoin sequence of GaAs MIS type diode and its electrical characteristics are presented. Used wafers were undoped GaAS wafer adn Te-doped GaAs wafer. Au and AuGe/Ni was used as schottky contact metal and ohmic contact metal respectively. Oxide layer on GaAs surface was formed by water vapor saturated oxide growth technique and dry oxidation technique. In Te-doped GaAs wafer, cutin voltage of MIS type diode was enhanced about 3V comparing with non-oxide layer diode. From light I-V characteristics fill factor of MIS type Te-doped GaAs diode was about 64%, Voc(open circuit voltage) was 0.67V.

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