Undoped p-type and Te doped n-type GaSb crystals were grown by the vertical Bridgman method. The lattice constant of the GaSb crystals was 6.096.+-.000373.angs.. The carrier concentration, the resistivity, and the carrier mobility measured by the van der Pauw method were p.iden.8*10$^{16}$ c $m^{-3}$ , .rho..iden.0.20 .ohm.-cm, .mu.$_{p}$ .iden.400c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.1*10$^{17}$ c $m^{-3}$ , .rho..iden.0.15 .ohm.-cm, .mu.$_{n}$ .iden.500c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type at 300K. In case of treatment with metal ion of R $u^{+3}$, P $t^{+4}$, the carrier concentration, resistivity and carrier mobility of the GaSb crystals were p.iden.2*10$^{17}$ c $m^{-3}$ , .rho..iden.0.08.ohm.-cm, .mu.$_{p}$ .iden.420c $m^{2}$ $V^{-1}$ se $c^{-1}$ for p-type, n.iden.2.5*10$^{17}$ c $m^{-3}$ , .rho..iden.0.07.ohm.-cm, .mu.$_{n}$ .iden.520c $m^{2}$ $V^{-1}$ se $c^{-1}$ for n-type respectively. GaSb crystals had a tendency to lower resistivity and higher mobility, for surface treatment with metal ion effectively diminished surface recombination centers.s.

A model for predicting the characteristics of elastic ferromagnetic materials having a moving gap was presented. Based on the model parameters concerning behavior of material, such as the instantaneous field intensity, attractive force between the poles, length of gap, and the induced current/ emf in the circuit can be determined from the numerical integrations of the governing equations derived. From the results of the model it is found that when dc emf is imposed on the circuit the current sharply rise and fall for very short duration then stabilize at extremely low level which depends mainly on elasticity, permeabilities and ratio of resistivity. Subsequently output emf is shown stabilized at constant value which depends on the previous parameters as well as the resistivity ratio of primary to secondary circuit after sufficient progress of time.

We have investigated dielectric properties of low fired ceramics BiNbO$_{4}$ containing 0.05[wt%] V$_{2}$O$_{5}$ and x[wt%l Cr$_{2}$O$_{3}$ (x=0, 0.2, 0.4, 0.8, 1.2). By substituting Cr for Bi, dielectric constant .epsilon.$_{r}$ and quality factor Q.f increased and temperature coefficient of resonant frecquency .tau.$_{f}$ changed to positive value. In the composition of BiNbO$_{4}$+0.05 [Wt%] V$_{2}$O$_{5}$+0.8[wt%]Cr$_{2}$O$_{3}$ sintered at 960[.deg. C], we could obtain microwave dielectric properties of .epsilon.$_{r}$=49, Q.f.simeq.3000[GHz](at 4.8[GHz]), .tau.$_{f}$.simeq.0[ppm/.deg. C]. As the above ceramics can be sintered near 960[.deg. C], it is applicable to multilayer microwave device with Ag conductor.tor.tor.tor.

Ferroxplana N $i_{2}$Y(B $a_{2}$N $i_{2}$F $e_{12}$ $O_{22}$ ) magnetic particles, which is one of the hexagonal ferrite were synthesized by a coprecipitation method. The coprecipitates were prepared by adding aqueous solution of BaC $I_{2}$ - 2 $H_{2}$O, NiC $I_{2}$ - 6 $H_{2}$O and FeC $I_{3}$ - 6 $H_{2}$O(of which the mole ratio is $Ba^{+2}$ : N $i^{+2}$ : F $e^{3+}$= 1 : 1 : 6) to a mixture of NaOH and N $a_{2}$C $O_{3}$. The shape of Ferroxplana N $i_{2}$Y magnetic particles obtained at 1, 100(.deg. C) was hexagonal plate-like, average particle size and aspect ratio were 2(.mu.m) and 7, respectively.y.

Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.

A downstream oxygen plasma is generated by capacitively coupled RF power and applied to photoresist stripping. Stripping rate (ashing rate) is measured in terms of RF power, chamber pressure, oxygen flow rate and temperature. Ashing reaction is thermally activated and depends on oxygen radical density. The ashing process is optimized to have the high ashing rate, good uniformity and minimal plasma damage using a statistical method.

Using the d.c. 2-probe method, we have examined the temperature dependence of CO gas sensitivity of pure ZnO and ZnO CuO thick films prepared by the acqueous precipitation. At 200ppm CO gas, pure ZnO thick film shows the maximum sensitivity of -6.5 at 300.deg. C. On the other hand, the maximum sensitivity of 1-5 mol% and 10-15 mol% CuO added ZnO thick films are 2.8-2.5 and 1.6, respectively. Therefore, the sensitivity of pure ZnO thick film is about three times larger than those of ZnO-CuO thick films. We suggest that the promotion of maximum sensitivity is caused by low packing and the increase of chemical adsorptions for $O_{2}$ gas.

In this study, the Tx(Transmitting) and Rx(Receiving) band pass filter for personal communication services was constructed and designed using .lambda./4 TEM mode dielectric resonators. Band pass filter was composed of ceramics resonators which has been developed using ($Zr_{0.65}$,$Sn_{0.35}$) $Ti_{1.04}$ $O_{4.04}$ ceramic and Unloaded-Q ( $Q_{o}$) of .lambda./4 TEM mode dielectric resonator with inner hole size 0.9mm and external size 3mm using silver electrode is 354.5 at 1.95GHz. For the band pass filter design and construction, the design theory and simulation results of band pass filter using J-inverter theory have been studied. The parameters which are evaluated by design theory are practically applied to the filter construction and the simulation results are in agreement with the measured results after fine tunnings.s.s.s.s.s.

Electrical properties such as surface flashover discharge and discharge degradations of insulating materials for superconducting cable have been investigated. It is found that the surface voltage is proportional to $l^{0.7}$ (l: discharge length) in liquid helium (LHe). V-t characteristic in LHe was a n=5.5 that was less than liquid nitrogen (L $N_{2}$). After applied AC voltage, the surface condition of polymer films was observed non-eroded areas and eroded areas. The eroded area is depending on the applied voltage. In case of LHe, the crack was observed.d.

In this paper, the cathode materials of solid oxide fuel cell were fabricated, and the analysis of TG/DTA, XRD, thermal expansion and electric conductivity were investigated. As a result, thermal expansion coefficient of LSM was not quite different from that of electrolyte. And the performance of LSM(x=0.4) was more excellent than the others.

Particle displacement distributions of the fundamental thickness shear vibration mode and overtone modes in an energy-trapped single resonator and an energy-trapped double acoustically coupled filter were calculated. The effects of the width of a pair of partial eletrodes and the magnitude of the plate back of the resonator on the particle displacement distributions of its symmetric vibration mode and anti-symmetric vibration mode were investigated. And the effects of the width of a pair of partial eletrodes, the width of the gap between two pairs of partial electrodes and the magnitude of the plate back of the filter on the particle displacement distributions of its symmetric vibration mode and anti-symmetric vibration mode were investigated.

이글에서는 다음의 내용을 다루었다. 1. FED의 동작원리 2. FED의 중요기술 3. 국내외 FED개발동향

본고에서는 여러가지 Wide Band-gap중에서 특히 최근에 많은 관심을 끌고 있는 GaN와 4H-SiC, 6H0SiC의 전자기적 물성을 소개하고 현재 이들로부터 제작된 prototype소자들의 성능을 비교함으로써 그 발전현황을 알아보기로 한다. 본고에서 관심을 두는 소자분야는 광전소자(optoelectronic devices)라기보다는 고주파 고출력용 전력소자임을 밝힌다. 아울러 GaN로부터 제작된 MESFET(MEtal Semiconductor Field-Effect Transistor)소자의 고주파 대역에서의 Large-Signal특성을 Device/Circuit Model을 통하여 실험치와 비교하여보고 이로부터 최적화된 channel 구조를 갖는 소자구조에서의 RF특성을 조사한다.