Sintered CdS/CdTe solar cells have been farbricated by coating a (Cd+Te) slurry on sintered CdS films followed by the sintering at 625.deg.C for one hour with various heating rates. When cadmium and tellurinm powders are used instead of CdTe powder to form CdS/CdTe junction, CdTe is formed in the temperature range of 290.deg.C-400.deg.C. The microstructure of the CdTe films depends strongly on the heating rate of the sintering due to the low melting temperature and the high vapor pressure of the elemental Cd and Te. An optimum heating rate obtain CdTe films with uniform and dense microstructure which, in turn, improves the efficiency of the sintered CdS/CdTe solar cells. All-polycrystalline CdS/CdTe solar cells with an efficiency of 9.57% under 50mW/cm$^{2}$ tungsten light have been farbricated by using a heating rate of 14.deg.C/min.

In this study, PLZT ceramics were fabricated by the freeze-drying and normal sintering method. The composition rate of the specimen was selected 9/65/35(La/Zr/Ti) which had good optical and dielectric properties, sintering time was varied 1, 10, 30, 50, 55, 60 and 65(hr) at 1250(.deg.C). After sintering, the optical and dielectric properties were investigated with the grain size. As the result of the experiment, the particle size of the powder prepared by freeze-drying method was less than 1(um). The relative dielectric constant was increased linearly with the sintering time and specimen sintered for 65(hr) had the highest value, 5780. Grain was grown with increasing time, in the case of specimen sintered for 60(hr), the grain size was 8.4(um). Transmittance was increased with the grain size. In the case of 8.4(um) grain size, the transmittance was 56(%). Curie temperature was decreased linearly by the surface-layer effect of space-charge. In the case of grain size, 1.8(um), 8.4(um), curie temperatures were appeared at 100(.deg.C) and 80(.deg.C), respectively.

In this study, PZT/PVDF composites with O-3 phase connectivity were prepared by hot pressing method, and the dielectric and piezoelectric properties as a function of PZT volume fraction were investigated. A modified cubic model was introduced to explain the influence of the PZT volume fraction on the experimentally determined dielectric constant. As A n=0.125, the measured dielectric constant values agreed with the calculated values. It was found that dielectric constant .xi.$_{33}$ and piezoelectric coefficient d$_{33}$ increased with indreasing PZT volume fraction, and hydrostatic piezoelectric figure of merit d/aub h/.g$_{h}$ was improved relative to that of the PZT single phase material.l.l.l.

This paper was a study on dielectric phenomena of the specimen, Polypropylene films which were annealled in air and quenched in liquid nitrogen after aging for 5[hr] in water of 100[.deg.C]. The specimen was measured in temperature range of 15-120[.deg.C] and in frequency range of 30-1x 10$^{6}$ [HZ]. As the results of the study, it was confirmed that the tacticity of specimen was isotactic structure, and the degree of cryatallinity of the specimens calculated by means of Natta's method from XRD (X-ray Diffraction) spectrum was 55[%]. And for dielectric relaxation, .betha. peak-the tan .delta. (spectrum around 20[.deg.C])-attributed due to amorphous regions, and .alpha. peak - the tan .delta. spectrum around 90[.deg.C]-due to crystalline regions. It was identified that the degree of crystallinity of the specimen quenched in the liquid nitrogen was increased to 55-65[%], and that of the specimen annealled in the air was decreased to 55-50[%]. And activation energy from dielectric loss spectra was obtained 34.5[kcal/mole] for .alpha. peak and 80.5[kcal/mole] for .betha. peak, respectively.

Te-thin films were highly proper material for optical recording media, but has the demerit of short archival life time due to the unstability to humidity. In order to restrain the degradation, Te$_{100-x}$Se$_{x}$ alloys adding Se stable for the humidity were fabricated. Primarily, to measure the degradation rate with varing the composition of Se to x=5, 10, 14, 25 at.% at Te$_{100-x}$ Se$_{x}$, the change of light transmittance was used in various temperature-humidity environments. As the results, it was showed that Se$_{86}$Te$_{14}$ thin was the most proper composition for the improvement of degradation restraint.int.int.

This paper describes the influence of the electrode materials, moisture content, electrolyte density, temperature, surface state, ion absorbent on the C.T.I of phenolic resin by the I.E,C, 112 method. C.T.I are increased for electrode materials with low hydrogen overvoltage and high soluble point. Increusing moisture content of samples increased by logarithmical on the droplet number to tracking breakdown. Increasing electrolyte temperature region above 70-80(.deg.C) decreased hydrogen over-voltage, following the density changes are decreased by C.T.I=1/aD$^{2}$-bD+C.

본 논문에서는 SiH$_{4}$-N$^{2}$ 혼합가스에 의한 PECVD 방법으로 퇴적시킨 실리콘 질화막의 신뢰성을 평가하기 위해 절연파괴 분포와 TDDB(Time Dependent Dielectric Breakdown)특성을 고찰하였다. MNS 캐패시터의 절연파괴 분포는 7-8NV/cm의 전계세기에서 그 파괴전계가 집중되었으며 전계와 온도 stress에 의해 파괴시간이 지수함수적으로 감소함을 알 수 있었다. 아울러 이러한 TDDB 특성과 계면준위 밀도 및 SiN 막내의 공간전하형성과의 관련성을 고찰하였다.