SAW filter has been used in mobile communication device, bandpass filter and resonator for merits )f miniaturization and high reliability. Materials for substrate mainly used single crystal such as LiNbO$_{3}$, LiTaO$_{3}$, ZnO. In this study, it was attempted that LiNbO$_{3}$ was substituted for piezoelectric ceramics(PZT4, PZT5A and PZT8) which had simple fabrication process because fabrication of crystal is difficult and it's cost is high. SAW filters were fabricated by the photolithography on piezoelectric ceramics substrates in order to compare their characteristics with LiNbO$_{3}$'s. The experimental value of center frequency was compared with theoretical one. The average difference of center frequency was 3.7%. PZT8 showed the best bandwidth properties among them. It is considered that PZT8 has higher mechanical quality factor and propagation velocity than others.

The UV/O$_{3}$ dry cleaning has been well known in removing organic molecules. The UV/O$_{3}$ dry cleaning method was performed to clean the Si wafer surfaces and contact holes contaminated by organic molecules such as residual PR. During the cleaning process, the Si surfaces were analyzed with X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) and ellipsometer. When the UV/O$_{3}$ dry cleaning at 200'C was performed for 3 minutes, the residual photoresist was almost removed on Si wafer surfaces, but Si surfaces were oxidized. For UV/O$_{3}$ application of contact hole cleaning, the contact string were formed using the equipment of ISRC (Inter-university Semiconductor Research Center). Before Al deposition, UV/O$_{3}$ (at 200.deg. C) dry cleaning was performed for 3 minutes. After metal annealing, the specific contact resistivity was measured. Because UV/O$_{3}$ dry cleaning removed organic contaminants in contact holes, the specific contact resistivity decreased. Each contact hole size was different, but the specific contact resistivities were all much the same. Thus, it is expected that the UV/O$_{3}$ dry cleaning method will be useful method of removal of the organic contaminants at smaller contact hole cleaning.

The characteristics of the response time and the viewing angle on twisted nematic (TN) liquid crystal display (LCD) and amorphous (a)-TN-LCD without rubbing were investigated. To measure the tansmission-voltage, response time, and viewing angle characteristics, we prepared three kinds of LC cells and then studied the surface liquid crystal alignment effect. It was found that the response time on A-TN-LCD was fast compared to the TN-I-CD, and the weak anchoring strength was attributed to the fast response time on a-TN-LCD. Also, we obtained the wide viewing angle characteristics on a-TN-LCD. The liquid crystal alignment of LCD device for electro-optical characteristics is discussed in the present paper.

In this study, piezoelectric actuator samples were fabricated using 0.375PMN-0.37OPT-0.255PZ system ceramics with Barium substitution and the strain properties of them were investigated. Dielectric constant of the specimens increased with the increase of Ba content up to 5mol% and decreased with futher addition of Ba. The largest piezoelectric coefficient and electromechanical coupling coefficient were observed at the sintering temperature of 1250'C and Barium content of 5mol%. The characteristics of strain hysteresis was found largely with varing the sintering temperature on the single round type, and the strain is proportional to piezoelectric coefficient.

The gate induced drain leakage(GIDL) current under the stress of worse case in -MOSFET's with ultrathin gate oxides has been measured and characterized. The GIDL current was shown that P-MOSFET's of the thicker gate oxide is smaller than that of the thinner gate oxide. It was the results that the this cur-rent is decreased with the increamental stress time at the same devices.It is analyzed that the formation components of GIDL current are both energy band to band tunneling at high gate-drain voltage and energy band to defect tunneling at low drain-gate voltage. The degradations of GIDL current was analyzed the mechanism of major role in the hot carriers trapping in gate oxide by on-state stress.

The green emitting phosphors of the Field Emission Display(FED), Al codoped ZnGa$_{2}$O$_{4}$:Mn, were synthesized and sintered at high temperature. From X-ray diffraction measurements, it was confirmed that poly crystalline ZnGa$_{2}$O$_{4}$ and ZnAI$_{2}$O$_{4}$ solid solution coexist in Al codoped ZnGa$_{2}$O$_{4}$:Mn. Photoluminescence spectra of Al codoped ZnGa$_{2}$O$_{4}$:Mn show that the main peak position is shifted from 504 nm to 513 nm with the increase of Al concentration. The brightness was improved with the amount of Al dopant. It showed the maximum value at the doping level of 0.03 mole and then, it degraded rapidly. These results are due to the superposition of emission from . ZnGa$_{2}$O$_{4}$:Mn and ZnAI$_{2}$O$_{4}$:Mn.

Bulk type radiation detector of Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure using Cd$_{1-x}$ Zn$_{x}$Te(x=20%) wafer(3x4xl mm$^{3}$) grown by high pressure Bridgman method has been developed. We etched wafer surfaces with 2% Br-methanol solution and coated gold thin film on the surfaces by electroless deposition method for 5 min. in 49/o HAuCI$_{3}$ 4H20 solution. Initial etch rates of Cd, Zn and Te were 46%, 12% and 42% respectively. After etched, the surface of wafer was slightly revealed to Te rich condition. The leakage current was increased with etch time, but it didn't exceed 3nA at 50volt. The thickness of Au film was about 100nm by Rutherford Backscattering Spectroscopy(RBS). The resolution were 6.7% for 22.1 keV photon from 109 $^{109}$ Cd and 8.2% for 59.5 keV photon from $^{241}$ Am. The radiation detector such as Au/Cd$_{1-x}$ Zn$_{x}$Te(x=20%)/Au structure was more effective to monitor the low energy gamma radiation.iation.

The purpose of this paper is to evaluate FRP rod for aging, which exposed to salt water and pure at elevated temperature. Dielectric constant and tan .delta. on time and frequency domain were tested to observe how rapidly the FRP rod aged. Dielectric constants of FRP rods with treating time were slightly increased. That of FRP rods with frequency, However, showed strongly the effects of large relaxation time estimated from interfacial polarization a or ionic. It is obvious that absorbed water affects to dielectric and electric properties of FRP with increasing the treating time.

The electrical and electromagnetic shielding properties have been investigated in polyaniline free standing films with different degrees of elongation cast from N-methyl 2-pyrrolidone(NMP) solution and camphorsulfonic acid(HCSA) doped polyaniline film. The degree of crystallinity of the crosslinked films increased with increasing the draw ratio. For the case of the oriented films doped with hydrochloric acid, we have the values of conductivities up to 173 S/cm. It is considered that the physical micro-crystalline crosslinking domains act as nucleation sites for the increase of relative crystallinity during stretching. We have obtained the value of conductivity 210 S/cm in the HCSA doped polyaniline film cast from the solvent of m-cresol, which is higher than that of the crosslinking oriented films. The electromagnetic shielding efficiency of HCSA doped polyaniline film obtained 37-41 dB in the frequency range of 10MHz-1GHlz, which is higher than that of the crosslinking oriented films. The higher value of electromagnetic shielding efficiency of HCSA doped polyaniline film suggests strong possibility of electromagnetic shielding material.

We have studied dielectric properties of sol-gel derived tantalum oxide thin films as the insulators. As the sample is annealed from 300.deg. C to 700.deg. C, it is found amorphous below 600.deg. C and crystalline over it. Dielectric constant is maximum(18.6) when Ta$_{2}$O$_{5}$ film was annealed at 400.deg. C. It is found that dielectric strength in Ta$_{2}$O$_{5}$ film annealed at 400.deg. C (1.5MV/cm) increases and then decreases over annealed at 500.deg. C. This phenomenon was attributed to pinhole effect and crystallization. The de conduction properties can be interpreted by Poole-Frenkel effect.ect.

본 해설에서는 평판 디스플레이 소자중의 하나인 LCD의 액정배향기술에 관하여 해설하였다. 액정배향은 LCD의 전기광학특성을 좌우하는 매우 중요한 기술이다. LCD 소자에 있어서 기판의 표면 위에 액정분자를 배열시키는 기술은 현재 러빙법이 주로 사용되고 있지만 러빙을 하지 않는 넌러빙법을 이용한 액정배향기술이 강하게 요구되고 있으며 향후 LCD에 있어서 보다 중요한 역할을 할 것으로 기대되고 있으며 고성능 LCD의 실현에는 필수 불가결한 기술로 생각된다.