The electron transport coefficients in argon gas is studied over the range of E/N values from 85 to 566 Td by the Monte Carlo method considering the latest cross section data. The result of the Monte Carlo method analysis shows that the value of the electron transport coefficients such as the electron drift velocity, the ratio of the longitudinal and transverse diffusion coefficients to the mobility. It is also found that the electron transport coefficients calculated by the two-term approximation analysis agree well with those by Monte Carlo calculation. The electron energy distributions function were analysed in argon at E/N=283, and 566 Td for a case of the equilibrium region in the mean electron energy. A momentum transfer cross section for the argon atom which was consistent with both of the present electron transport coefficients was derived over the range of mean electron energy from 10.3 to 14.5 eV, also suggested as a set of electron cross section for argon atom. The validity of the results obtained has been confirmed by a Monte Carlo simulation method.

We fabricated Zinc Oxide transparent conductive thin films with 2wt% of A1203 doping using rf magnetron sputtering. And we investigated electrical and optical characteristics of them which were made with conditions ; rf power 60-300W, thickness of film 3000 11000.angs.. Resistivity, carrier concentration and Hall mobility were investigated for electrical characteristics. Transmittance and optical band gap were investigated with Spectrophotometer in the wavelength range between 200-900 nm. As a result, ZnO thin film fabricated with rf power of 180W and thickness of 5000.angs. showed the best properties. At the best condition, the sample has resistivity of 1*10$\^$-4/.ohm.cm and transmittance of 95% in the visible range.

The material that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. It has many fields of application such as Solar Cell, Liquid Crystal display, Vidicon on T.V, transparent electrical heater, selective optical filter, and a optical electric device , etc. In the recent papers on several TCO( transparent conducting oxide ) material, the study is mainly focusing on ITO(indium tin oxide) because ITO shows good results on both optical and electrical properties. Nowaday, in the development of LCD(Liquid Crystal display), the low temperature process to reduce the production cost and to deposit ITO on polymer substrate (or low melting substrate) has been demanded. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. The resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140.deg. C. is 1.6*10$\^$-4/.ohm..cm with 85% optical transmission in viaible ray.

We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose($D_c$), channel length(L), gate oxide thickness($T_ox$) and junction depth of source/drain($X_j$) using device simulation. The buried channel behavior with these process prarameter variation were showed apparent difference. Also, the fabricated pMOSFET device having different channel length represented good S.S value and low leakage current with increasing drain voltage.

기계적 합금화법에 의한 비정질화 과정을 Ni-Ta계 및 Cu-Ta계에 대하여 조사하였다. Ni-Ta합금계는 혼합엔탈피가 음이나, Cu-Ta계는 혼합엔탈피가 양인 열역학적으로 대조적인 합금계이다. 볼밀 중 발생하는 원자구조 변화를 중성자회절법을 이용하여 관찰하였다. 두 합금게에 있어서 기계적 합금화에 의한 비정질상이 생성되었다. 비정질 Cu-Ta합금의 local원자구조를 혼합엔탈피가 크게 음인 Ni-Ta계의 결과와 비교하였다. 그 결과, 대조적 특성을 가진 두 합금계임에도 불구하고 원자크기가 작은 Ni 및 Cu가 bcc Ta의 결정격자 속으로 우선적으로 침입함으로써 비정질화가 진행됨을 알 수 있었다.

In this paper, reduction characteristics of NOx gas produced from diesel engine combustion is studied by using pulse corona discharge. Nox concentration of 1900ppm (NO 1870, NO$\sub$2/ 30 ppm, N$\sub$2/ balance gas) was controlled in a fixed quantity of 280ppm, using a flow meter. Reactors are composed of cylinder type. NOx reduction rate is investigated with discharge electrode diameter[0.5,1,3,4.phi.], reactor length [130,300mm], reactor materials[Copper, Poly Vinyl Chloride] and Input voltage[DC, AC, DC Pulse square voltage]. In the result, NOx reduction rate is the best of all in copper reactor, small electrode diameter[0.5.phi.], DC pulse voltage and long reactor[300mm]. Then Teduction rate of NOx is about 93%.

This paper examines the characteristics and physical properties of the scaled MONOS nonvolatile memory device for low programming voltage EEPROM. The capacitor-type MONOS memory devices with the nitride thicknesses ranging from 41.angs. to 600.angs. have been fabricated. As a result, the 5V-programmable MONOS device has been obtained with a 20ms programming time by scaling the nitride thickness to 57.angs. with a tunneling oxide thickness of 19.angs. and a blocking oxide thickness of 20.angs.. Measurement results of the quasi-static C-V curves indicate, after 10$\^$6/ write/erase cycles, that the devices are degraded due to the increase of the silicon-tunneling oxide interface traps. The 10-year retention is impossible for the device with a nitride less than 129.angs.. However, the MONOS memory device with 10-year retentivity has been obtained by increasing the blocking oxide thickness to 47.angs.. Also, the memory traps such as the nitride bulk trap and the blocking oxide-nitride interface trap have been investigated by measuring the maximum flatband voltage shift and analyzing through the best fitting method.

Two step RTD(Rapid Thermal Diffussion) of P into silicon wafer using tungsten halogen lamp was used to fabricated very shallow n$^{+}$p junction. 1st RTD was performed in the temperature range of 800.deg. C for 60 see and the heating rate was in the 50.deg. C/sec. Phosphrous solid source was transfered on the silicon surface. 2nd RTD process was performed in the temperature range 1050.deg. C, 10sec. Using 2 step RTD we can obtain a shallow junction 0.13.mu.m in depth. After RTD, the Ti-silicide process was performed by the two step RTA(Rapid Thermal Annealing) to reduced the electric resistance and to improve the n$^{+}$p junction diode. The titanium thickness was 300.angs.. The condition of lst RTA process was 600.deg. C of 30sec and that of 2nd RTA process was varied in the range 700.deg. C, 750.deg. C, 800.deg. C for 10sec-60sec. After 2 step RTA, sheet resistance was 46.ohm../[]. Ti-silicide n+p junction diode was fabricated and I-V characteristics were measured.red.

This paper describes a study on absorption properties of electromagnetic wave by the composition ratio of Ni-Zn ferrite. Ni-Zn ferrite was composed of 48-52mol% Fe$\_$2/O$\_$3/, 18-22mol% NiO and 26-34mol% ZnO. The sintering of the composition was carried out at 1200.deg. C for 2 hours. Through the experiments, it was found that the resonance phenomenon occured at low frequency range for high permeability and vice versa. In the case of the composition of 49mol% Fe$\_$2/O$\_$3/, 20mol% NiO and 31mol% ZnO, the bandwidth ranged from 0.35GHz to 0.95GHz with the absorption thickness of 10mm. Also, in the case of the composition 51mol% Fe$\_$2/O$\_$3/, 22mol% NiO and 27mol% ZnO, the bandwidth ranged from 0.48GHz to 1.2GHz with the absorption thickness of 6mm.

Red emitting CaS:Eu,S electroluminescent(EL) device prepared at 550.deg. C by an electron-beam evaporation technique, demonstrated luminance of 175cd/m$\^$2/ and efficiency of 0.311m/W with 3kHz drive. Luminance was increased with the increase of applied voltage and frequency. From the results of the PL spectrum and the EL spectrum, the CaS:Eu, S device showed emission peak near 640nm resulted from the transition of EU$\^$2+/ 4f$\^$6/5d.rarw.4f$\^$7/. The capacitance of the phosphor layer from the Sawyer-Tower circuit was 10.5nF/cm$\^$2/.

This paper examines the electrical properties according to a curing time and a corona degradation in epoxy composites which are used for transformers. To consider these phenomena, the electrets were formed by appling high voltages to five kinds of specimens designed according to a constant mixing rate and then TSC(Thermally Stimulated Current) values at the temperature range of -160-200[>$^{\circ}C$] were measured from a series of experiments. The behaviour of carrier and its possible origins in epoxy composites were studied. Various effects of curing time and electric field on epoxy composites were also investigated.

We describe a manufacturing method and characteristics on components of molten carbonate fuel cell. Cr, Al, AI$_{2}$O$_{3}$, Co, MgO powder were mixed with Ni powder for anode components and NiO was used for cathode electrode. The electrolyte plate consisted of LiAIO$_{2}$ and carbonate (Li$_{2}$CO$_{3}$/K$_{2}$CO$_{3}$=62/38) and these three were manufactured by doctor-blade method. As a result, open circuit voltage was 1.05[VI at Ni-10Cr anode and porosity was above 60[%].

Process optimization experiments based on the Taguchi method were performed in order to set up the optimal process conditions for the contact oxide etching process module which was built in order to be attached to the cluster system of multi-processing purpose. In order to compare with Taguchi method, the contact oxide etching process carried out with different process parameters(CHF$_{3}$/CF$_{4}$ gas flow rate, chamber pressure, RF power and magnetic field intensity). Optimal etching characteristics were evaluated in terms of etch rate, selectivity, uniformity and etched profile. In this paper, as a final analysis of experimental results the optimal etching characteristics were obtained at the process conditions of CHF3/CF4 gas flow rate = 72/8 sccm, chamber pressure = 50 mTorr, RF power = 500 watts, and magnetic field intensity = 90 gauss.

For the execution of RIETAN program adopting Rietveld Analysis Method, the sample superconductor is made according to the solid state synthesis method at 920.deg. C for 24hrs, and was examined for the optimization of parameters needed to analyze Rietveld method with the input of the measured pattern data after measuring the pattern resulted from the X-ray diffraction. It was proven that the lattice constant of the superconductor which was consisted of Pmmm orthorhombic crystal structure in the analyzed space group correspond to the presented theoretical lattice constant a=3.8887(8).angs., b=3.8238(4).angs., c=11.7079.angs.. Therefore, it was examined and confin-ned that the R factor, which was compensated after analyzing the structure of superconductor resulted from this experimented data with the computer simulation, was refined to $R_{wp}$=8.83[%], $R_{P}$=6.47[%], $R_{I}$=10.08[%], $R_{F}$=7.19[%], $R_{E}$=3.76[%]. On the basis of these experimental data, the significant parameter such as the scale factor(S) and the zero point shift(Z) and FWHM value(U,V,W) were optimized as follows; S=2.0827E-3, Z=0.2146, U=4.2761E-2, V=1.7983E-2, and W=2.6768E-2.2.2.2.2.2.

To improvement the magnetic and frequency properties of YIG(Yttrium-Iron Garnet) in microwave region, it is investigated that the effect of $Al^{3+}$ ions on magnetic and frequency characteristics of YIG, using samples of basic YIG composition( $Y_{3}$F $e_{5}$ $O_{l2}$) added with A1$_{2}$ $O_{3}$ from 0 to 2.5 [mol%]. The measurment is conducted mainly for the structural properties and magnetical properties. The structural properties is measured using SEM(Scanning Electro Microscope), EDX(Energy-dispersive X-ray spectrometer) and XRD(X-ray diffraction equipment). The magnetical properties is measured with B-H curve tracer and impedance analyzer. As a result, it is confin-ned that the effect of eddy current loss is minimized while maintaining high saturation flux density of YIG, when YIG is added with 0.5 [mol%] of A1$_{2}$ $O_{3}$.>.>.

A novel thin film processing technique has been developed for the fabrication of ultrathin films of conducting polymers with molecular-level control over thickness and multilayer architecture. This new self-assembly process opens up vast possibilities in applications which require large area, ultrathin films of conducting polymers and more importantly in applications that can take advantage of the unique interactions achievable in the complex, supermolecular architectures of multilayer films.

Electron swarm studies to derive electron collision cross sections of atoms and molecules from measurements of electron swarm data are reviewed. Stress is placed on those using molecular gas-rare gas mixtures.

회토류계 영구자석은 종래의 Ferrite계나 Alnico계와 비교해서 대단히 강하여, 전기전자부품의 소형화에 크게 기여하고 있다. 최근에는, 전자기기산업 이외의 분야에 있어서도 그의 응용이 확대되어가고 있는 추세로 자성재료의 생산액은 매년 증가하고 있다. 회토류계 영구자석재료의 연구는 1960년대에 시작되어 Sm $Co_{5}$, Sm$_{2}$ $Co_{17}$ 화합물의 등장을 거쳐 현재는 1982년데 Sagawa 및 Croat가 독자적으로 발견한 Nd$_{2}$ Fe$_{14}$B 자석이 주류로 되고 있다. 그렇지만 이 화합물에는 다른 영구자석에 비하여 큐리온도가 낮은 결점이 있어서, 아직도 새로운 화합물의 탐색이 계속되고 있다. 그 중에서도, 1990년대에 Coey에 의해서 최초로 학회지에 보고되어진 Sm$_{2}$Fe$_{17}$N$_{x}$는, Nd$_{2}$Fe$_{14}$B와 같은 정도의 이론 최대에너지급, Sm $Co_{5}$에 대등한 거대한 이방성자장, 750K에 달하는 큐리온도등의 우수한 성질을 갖고 있어 Nd$_{2}$Fe$_{14}$B를 극복하는 자성재료로서 큰 기대가 되어진다. 되어진다.진다.

본 고에서는 지구환경문제에 관련된 가스와 그들의 검지를 위한 가스센서에 관하여 살펴보고자 한다. 환경오염을 방지하려는 노력과 대책이 전세계적으로 추진되고 있는 시점에서 특히 대기오염의 주범인 환경가스에 대한 고성능 센서의 개발은 필수불가결하다. 그러나 현재에 사용되고 있는 환경가스센서는 차량의 배기계통에 사용되는 산소센서나 연소배출가스를 검지하는 소수의 가스센서외에는 아직 실용화되지 못하고 있다. 따라서 고온, 부식등의 과혹한 조건하에서 안정하고, 고성능의 센서의 개발은 물론 센서를 구동시키는데 필연적인 신호처리 등 주변기술 또한 병행해서 발달되어야 할 것이다.