Non-ozone layer destructive Chlorofluorocarbon(CFC) altematives(CHCIF$_{2}$ and $C_{2}$H$_{2}$F$_{4}$) have been initially used for laser-induced thenrmochemical etching of GaAs. High etching rate up to 188.mu.m/sec and an aspect ratio of 2.7 have been achieved by a single scan of laser beam, respectively. The etching rate at constant ambient gas pressure was found to saturate for beam power. The chemical compositions of the reaction products deposited on the etched groove were measured by Auger electron microscopy(AES). Etched profile, depth and width were observed by scanning electron microscope(SEM).

In optical soliton transmission systems with nonlinear dispersive materials, which is utilized for ultra-long and high bit rate transmission, it is shown that the value of initial time difference between adjacent solitons is analyzed for optimum bit rate. The method is inducted by uncorrelation condition with minimum interaction forces in initial covariance coefficient between adjacent solitons. When the initial time difference is 6 times of soliton pulse width by the results, it is shown that the reliability is maintained with more than 90% within transmission length of soliton period. multiplied by 93.

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

In this study, we performed a modeling for $K^{+}$ ion-exchanged diffused channel waveguide and waveguide-type optical coupler by Wentzel-Kramer-Brillouin(WKB) dispersion equation, normalized field distribution equation for mode and coupled mode theory, and examined the optical-power-dividing of the optical coupler fabricated by using the modeling condition. The optical-power-dividing was observed at the waveguide-type optical coupler with 3[.mu.m] line-width, 6[.mu.m] space between channel waveguides, and 3[mm] interaction length.h.

We have studied the effect of the mesogenic core of nematic liquid crystals (NLCs) for polar (out-of-plane tilt) anchoring strength and surface order parameter on rubbed polyimide (PI) surfaces. The order of polar anchoring strength for NLCs on rubbed PI surfaces is 5CB > PCH5 > CCH5. From the above results, we suggest that the polar anchoring strength depends on the polarizability of the NLCs. The surface order parameter for NLCs is 5CB > PCH5 > CCH5 on rubbed PI surfaces. We conclude that the polar anchoring strength is strongly related to the surface order parameter on rubbed PI surfaces.

As methane concentration was varied, the textures of diamond films deposited on Si(100)substrate were observed by XRD,SEM and Raman spectroscope. As a result, $O_{2}$ plasma etching has been useful to observe microscopic structure of diamond films by SEM. The cross section of diamond films deposited on Si(100)substrate with 4% concentration of methane to hydrogen was a polycrystal like a pillar. The diamond crystal like a pillar has been oriented to (110)surface and the high quality diamond film with FWHM of Raman spectra being 3.8 $cm^{-1}$ / has been grown. As time goes by deposition time, the preferred orientation increases

The temperature dependent characteristics of hydrogenerated amorphous silcon thin film transistor (a-Si:H TFT) with a bottom gate of N-Type <100> Si wafer were investigated. Drain current on the hysteresis characteristic curve showed an exponential variation. Hysteresis area of TFT increased with the gate voltage increased and decreased with the small gate voltage. According to the variation of gate voltages, drain current of TFT increased by temperature increase, and hysteresis characteristics mainly depended on the temperature increase. The hysteresis current showed negative characteristics curve over 383K. The hysteresis occurance area and the differences of forward and reverse sweep were increased at the higher temperature. Hysteresis current of I$_{d}$(on/off) ratio decreased at the lower temperature and increased at the higher temperature.e.

The electrical properties of bulk galsses in the system Na$_{2}$O-CaO-Al$_{2}$O$_{3}$-B$_{2}$O$_{3}$-SiO$_{2}$ containing 20 to 30mol% sodium which have been subjected to a sodium .tautm. silver ion exchange reaction for 24, 36 and 48 hrs. were analysed by impedance spectroscopy method. Ion exchanged glasses exhibit activation energy values lower than those of the untreated ones. The electrical conductivity increase with sodium content and ion exchanging time. In this experiment the electrical conductivity exhibits a manximum value of 1.78*10$^{-4}$ S/cm at 200.deg. C which contains 30mol% sodium and subjects ion exchange reaction for 48hrs.

The surface properties of AI(Si, Cu) alloy film after plasma etching using the chemistries of chlorinated and fluorinated gases with varying the etching time have been investigated using X-ray Photoelectron Spectroscopy. Impurities of C, Cl, F and O etc are observed on the etched AI(Si, Cu) films. After 95% etching, aluminum and silicon show metallic states and oxidized (partially chlorinated) states, copper shows Cu metallic states and Cu-Cl$_{x}$(x$_{x}$ (x$_{x}$ (1

A double diffusion technique is developed to enhance the effective mode index of optical waveguides in $LiTaO_3$. It consists of Zn diffusion from the vapor phase at relatively low temperatures (750->$800^{\circ}C$), into waveguides initially produced by Ti indiffusion at higher temperature (1150->$1200^{\circ}C$). Both X- and Z-cut substrates are investigated. A model that combines profiles of both diffusion is formulated to calculate the expected effective index values for planar waveguides. Good agreement is found between experimental results and model predictions which assume that the initial Ti profile is not affected by the lower temperature Zn diffusion. Effective index enhancements as high as 0.005 and 0.003 are obtained by this method for the fundamental extraordinary and ordinary modes, respectively.

본 고에서는 초전도에 관한 학문적 연구내용의 추이와 그 응용기술의 개발내용을 간략히 살펴보았다. 고온 초전도의 형성원리에 대한 학문적 관심과 응용기술 개발사이의 괴리를 이해하려는 노력의 일환으로 고온 초전도체를 주대상으로 한 각종 연구결과들을 소개하면서 순수학문과 공학기술과의 긴밀한 연관성을 찾았다. 전자와 정공의 도핑 대칭성을 확립한 Nd-Ce-Cu-O의 발견은 물성의 정확한 이해에 기초한 성공이었고, 산화물 고온 초전도체들의 전자쌍 파동함수의 대칭성에 관한 논의들에서 최근 연구의 주종을 이루고 있는 Josephson-coupling과 Photoemission등의 직관적인 결과를 주는 측정 실험들은 고도의 첨단기술과 죠셉슨 접합 등의 새로운 초전도 물성개념의 정확한 이해를 요하는 연구들이었다. 이러한 새로운 초전도 개념들의 토대위에 현 응용분야들의 추세를 대략 살핌으로써 부실하나마 미래의 차원 높은 수요에 대비한 학문적, 기술적 준비를 시도해 보았다.

본 연구에서는 초전도의 전반적인 시장규모, 에너지 분야에서의 고온 초전도 연구 진척 내용, 마지막으로 저온 초전도체의 기술현황을 토대로 저온을 고온 초전도체로 대체 시 이에 따른 대체 효과를 비교 분석하고자 하였다. 하지만 고온 초전도체에 관한 기술적 문제가 아직 많은 문제로 제기되고 있어 정확한 기술적 판단에는 아직 상당히 미흡하다고 여겨진다. 또한 초전도를 이용한 에너지 응용범위가 너무 광범위하여 본고에서는 대표적 응용분야 몇 가지만 소개하고자 한다. 참고로 4K와 77K의 차이점을 평가할 때의 기준은 자기장과는 무관하게 임계전류밀도를 77K에서 $10-^5$$cm^2$으로 가정 실시한 것이다.