SiO thin films are deposited by evaporator the refractive index of wave length, photon energy and the absorptive rate of these films are measured by spectroscopic ellipsometer. It is derived the absorptive rate and permitivity of SiO thin films from the equations that calculating the refractive index. And the result show good agreement with the calculated values and experimental values. As a result, the wave length of light is increased in the condition that the angle of incidence is fixed on SiO thin film, the basic absorption and the absorption impurities are found in the low wave length (below 450 nm in this study) and the reflective absorption and conductive absorption is increased by the form of exponential function over the low wavelength. The absorptive rate is increased by increased the angle of incidence and thickness of SiO film for the insulating layer. As the thickness of SiO film is increased, the value of complex permitivity is decreasing and as wave length of incidence is increased., the value of dielectric is linearly increasing.

With the contact angle of phase dropping epoxy resin on the inorganic filler(glass plate) surface treated with air plasma, we have studied about the interfacial wettability between epoxy resin and glass plate as a simple model of glass fiber reinforced composite materials. The contact angle on the inorganic filler surface varied with surface treatment conditions. The contact angle significantly depends on plasma treating time and environment temperature in the oven. From the view point of plasma treatment condition in this work, when discharge conditions were pressure 200mtorr, voltage 800V, magnetic flux density 8OGauss, optimum treatment time were proved as 3,4 and 5 minutes for the environment of >$80^{\circ}C$, >$100^{\circ}C$ and >$120^{\circ}C$, respectively.

Ceramic filter using energy trapping effect is used bandpass filter at high frequency. In this paper, the resonant points of the symmetrical modes and antisymmetrical modes were theoretically analyed and synthesized these modes in order to know the filter characteristics. We simulated them using the computer and also fabricated the ceramic filter using PZT-4 piezoelectric plate made by Valpey Fisher Co., The 1.5[.mu.m] - thick platinum electrode were deposited on the ceramic plates with the various masks. The characteristics of the fabricated filters were measured using the spectrum analyzer. Experimental data were compared with the theoretical results. The maximum-pass frequencies coinsided exactly. The bandwidths of the fabricated filters were slightly different between theoretical and experimental results. We found that these phenomenon were caused by the stray capacitance between the two neighbor electrodes..

Frequency-dependent electrical properties of $C_{22}$-Quinolinium(TCNQ) LB films were investigated in a frequency range of 10[Hz]-13[MHz] along a perpendicular direction. The films were heat-treated to understand an electrodynamic response in a temperature range of 20-240[.deg. C]. Frequencydependent dielectric constants show that there are two characteristic dispersions; one is a dispersion occuring near 1[MHz] coming from the orientational polarization of the molecules and the other one is an interfacial polarization effect below 1[kHz] or so when the annealing temperature is above 80 [.deg. C]. The overall frequency-dependent dielectric constant is higher near 80[.deg. C]. It may be due to a softness of the alkyl chains. Several other methods were employed to identify the internal structure change of the films. DSC(differential scanning calorimetry) data of the $C_{22}$-Quinolinium(TCNQ) molecules shows that there is an endothermic process near 110[.deg. C] and a weak exothermic process near 180[.deg. C]. While the endothermic process is related to a disordering of the alkyl chains, the exothermic process seems to be due to a chemical structure change of the TCNQ molecules. Thickness measurement by ellipsometry shows that there is a thickness drop near 100[.deg. C], and the thickness above 120[.deg. C] becomes around 20[%] of the room-temperature value.lue.

Solid solutions Sr$_{2}$(Ta$_{1-x}$ Nb$_{x}$)$_{2}$O$_{7}$, (x=0.0-1.0), composed of strontium tantalate(Tc=-107.deg. C) and strontium-niobate(Tc=1342.deg. C) were prepared by the conventional mixed oxide method and the flux method(molten salt synthesis method). Phase relation, sintering temperature, grain-orientation and dielectric properties for sintered ceramic samples were investigated with different compositions. Both Curie temperature and dielectric constant at Curie temperature were increased, and sintering behavior and the degree of grain-orientation were improved with the increase of Nb content. The single phase Sr$_{2}$(Ta/sib 1-x/Nb$_{x}$)$_{2}$O$_{7}$ powder was synthesized by using the flux method at lower temperatures, and sintering temperature was also reduced by using the flux method-derived powder than using the mixed oxide-derived powder. Sintering characteristics and dielectric properties of the specimens prepared by the flux method were better than those derived through the conventional mixed oxide method.thod.hod.

This paper describes the fabrication and characteristics of a Si Hall sensor fabricated on a SOI (Si-on-insulator) structure. The SOI structure was formed by SDB(Si-wafer direct bonding) technology and the insulator of the SOI structure was used as the dielectrical isolation layer of a Hall sensor. The Hall voltage and sensitivity of the implemented SDB SOI Hall sensors showed good linearity with respect to the applied magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall sensor was average 600V/A.T and its value has been increased up to 3 times compared to that of bulk Si with buried layer of 10.mu.m. Moreover, this sensor can be used at high-temperature, high-radiation and in corrosive environments.

Optimum condition of remote plasma enhanced chemical vapor deposition using orthogonal array method was chosen. Characteristics of oxide films deposited by RPECVD with SiH$_{4}$ and N$_{2}$O gases were investigated. Etching rate of the optimized SiO$_{2}$ films in P-etchant was about 6[A/s] that was almost the same as that the high temperature thermal oxide. The films showed high dielectric breakdown field of more than 7[MV/cm] and a resistivity of 8*10$^{13}$ [.ohmcm] around at 7[MV/cm]. The interface trap density of SiO$_{2}$/Si interface around the midgap derived from the high frequency C-V curve was about 5*10$^{10}$ [/cm$^{2}$eV]. It was observed that the dielectric constant of the optimized SiO$_{2}$ film was 4.29.

The present work is concerned with the switching conduction characteristics of PI LB films in metal insulator metal sandwiches. By applying various DC voltage bias to MIM junctions, conduction characteristics of junctions can be changed between the high-voltage low-current(off) condition, the low-voltage high-current (on) condition and the medium(mid) condition. Switching conduction characteristics can be also observed in MIM junctions employing some aromatic compounds as insulators. Switching conduction characteristics is assumed to be owing to the existence of aromatic rings, space charge in films, impurities on metal-insulator interface, and difference in work functions of base and top electrodes metal. To study the conduction process of on, off, and mid conductions, we measured I-V, d$^{2}$V/d I$^{2}$-V characteristics of junctions with several different top electrodes under various temperatures. Small conductance changes of junctions can be measured by observing the second derivative, d$^{2}$V/dI$^{2}$, of I-V curve. A dynamical technique is used to get the second derivatives. That is, a finite modulation of the current is applied to the junctions and the second harmonic of the voltage is detected.

The electrical property of ultra thin PVA films(several hundreds .angs.-several .mu.m in thickness) formed by sphere bulb blowing technique, has been studied. The electrical conductivity of relatively thick films(>several thousands .angs.) has been very high and enhanced by the exposure either to high humidity of air or $NH_3$, which can be explained in terms of the role of ionic transport. The use of PVA films as NH$_{3}$ sensor is also proposed. In ultra thin PVA films less than 1500.angs., two conducting states ; high conducting and low conducting states, are observed. The nonlinear current-voltage characteristics in the low conducting state and the switching between these two states are also confirmed. These properties are discussed in terms of electronic conduction processes. The breakdown strength of the ultra thin PVA film is found to be very high(-30MV/cm), supporting the electron avalanche process in a thick polymer films.

Temperature dependences of the dielectric constant K(T), remanent polarization $P_{r}$, (T), effective birefringence overbar .DELTA.n(T), transmitted light intensity and quadratic electro optic coefficient R(T) of the two-stage sintered xBa(L $a_{1}$2/N $b_{1}$2/) $O_{3}$-(1-x)Pb(Z $r_{y}$ $Ti_{1-y}$) $O_{3}$(x=0.085, 0.09, 0.40.leq.y.leq.0.70) ceramics were investigated. Increasing the PbZr $O_{3}$ contents, the crystal structure of a specimen was changed from a tetragonal phase to a rhombohedral and cubic phase, and the phase transition was showed a diffuse phase transition(DPT) characteristics. In the compositions which located on the PE-FE phase boundary, the discrepancy was observed between the Curie temperature and temperature which a microscopic polarization and effective birefringence were disappeared.red.d.

We presented Tungsten and Tungsten Nitride thin films deposited by RF and DC sputtering. It deposited at various conditions that determining the resistivity and sheet resistivity by stabilizing the basic theory. We investigated properties of the resistivity and sheet resistivity of these films under various conditions, temperature of substrate, flow rate of the argon gas and content of nitrogen from nitrogen-argon mixtures. As the temperature of substrate increased and the flow rate of the argon gas decreased, the resistivities of these films reduced by structural transformation. We found that these resistivities were depend on the temperature of substrate, flow rate and electric power. Very highly resistive tungsten films obtained at 10W RF power. On the contrary, we found that films deposited by DC sputtering, from which very lowly resistive tungsten films were obtained. Tungsten nitride thin films deposited by reactive DC sputtering and the resistivities of these films increased as the content of nitrogen gas increased from nitrogen-argon mixture. And also we found the results show very good agreement, compared with experimental data.

The characteristics of the internal circuits and the load capacitance should be included to optimize the size of BiCMOS buffer. In order to get the optimum size and delay time of the BiCMOS buffer, new size plane is suggested. By using the size plane, the optimum characteristics of CMOS buffer according to the number of stages can be obtained. From this method, delaytime, .tau.$_{D}$, is obtained 2.39 nsec with $V_{\var}$=5V, $C_{L}$=5pF, W=30.mu.m and $A_{e}$=135.mu. $m^{2}$.>..>...>.

In this study, the piezoelectric ceramics/polymer composite transducers with 1-3 connectivity have been studied. A piezoelectric ceramics PZT prepared by Wet-Dry Combination method was used as a filler in polymer matrix Eccogel. We've got the pulse-echo response for 1-3 type piezc-electric composite transducers in water. It was shown that the transmitting and receiving sensitivity of 1-3 type piezoelectric composite transducers could be improved in comparison with that- of solid PZT transducers. The reason is for that 1-3 type Piezoelectric composites have low dielectric constant and density. There was in a good agreement between the resonant frequencies calculated from one period and observed results on the Ultrasonic Transducer Analyzer. According to these results we could be figured out the distance in water by virture of the pulse-echo response.

In this paper, we investigated physical properties and electrical characteristics of the fluorocarbon that used as coolants for large power gas-insulated transformer. Volume resistivity of the fluorocarbon was .rho.=1.87*10$^{15}$ [.ohm.cm] at 1 atm, 27.deg. C. Dielectric constant was 1.86 and decreases as temperature increase. The breakdown voltage at 1 atm was higher than that of transformer oil. The breakdown voltage of fluorocarbon vapor was about 18kV when pressure in a test chamber increases over lkg/cm$^{2}$. When fluorocarbon was mixed with SF$_{6}$ gas, breakdown voltage of the mixed was higher than that of fluorocarbon. Then fluorocarbon leads to increase over 4kg/cm$^{2}$ in pressure as temperature increase. Therefore, when a gas-insulated transformer is manufactured, the design must be taken into consideration a high-pressure.

0.15(B $a_{0.95}$ S $r_{0.05}$)O-0.15S $m_{2}$ $O_{3}$-0.7Ti $O_{2}$ ceramics were fabricated by the mixed-oxide method. Microwave dielectric properties were investigated with sintering conditions. Increasing the sintering temperature from 1300 to 1375[.deg. C], the sintered density was increased from 5.44 to 5.63[g/c $m^{3$]. Increasing the sintering temperature, dielectric constant and quality factor were increased and temperature coefficient of resonant frequency was independent of sintering temperature. In the specimen sintered at 1375[.deg. C], dielectric constant, quality factor and temperature coefficient of resonant frequency were 80.79, 2784(at 3[GHz]), +11.07[ppm/.deg. C], respectively..

Multimedia has created a system environment that needs a combination of diverse peripherals, faster I/O, and easier configuration. The sheer volume of data one can expect with multimedia hardware and applications storage systems of higher capacity and faster data transfer rate. Unlike the magneto-optical(MO)disk technology which uses bias magnetic field in writing, both the reading and the writing in the phase change (PC) technology are performed only by laser light. In PC optical media, an active layer is reversibly converted between amorphous state and crystalline state by changing irradiation conditions of focused laser beam. Thus, as compared with MO disk, the PC disk has such great advantages that signals can be reproduced by change of reflectance of laser beams in the same manner as the compact disc. The reflectivity of a phase-change spot can be altered in a single pass under the head only through modulation of laser power. The principles and the current status of phase-change optical recording media combined with possible applications are discussed in the present article.

반도체 사업의 영역을 어떻게 분류하느냐에 따라 다르겠으나, 우리나라가 메모리 분야에서는 세계의 선진회사와 어깨를 나란히 한다는 점에서 메모리분야와 비메모리분야를 분류해 보고, 특히 비메모리분야의 기술동향과 이 분야에서의 우리나라 반도체 업체들의 사업전개 방향에 대해 방향을 제시해 보고자 한다. 메모리는 국내업체가 세계시장의 30%이상을 공급하고 있고, 256메가디램등 메모리분야에서 최첨단 제품의 개발이 속속 발표되고 있다. 반면에 그의 반도체 (비메모리분야)의 경우는 세계시장의 수 퍼센트도 공급하지 못하는 실정으로 반도체의 75% 가량을 차지하는 이 시장의 진입을 위해 장단기 계획을 수립하여 적극적으로 추진해야 할 것이다. 이 논문에서는 반도체 기술의 현재 상황을 국내외로 비교검토하고 우리나라와 기업의 발전방향을 제시해 보고자 한다.