• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.4
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• pp.27-35
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• 2008

This work proposes a 14b 150MS/s 0.13um CMOS ADC for SDR systems requiring simultaneously high resolution, low power, and small size at high speed. The proposed ADC employs a calibration-free four-step pipeline architecture optimizing the scaling factor for the input trans-conductance of amplifiers and the sampling capacitance in each stage to minimize thermal noise effects and power consumption at the target resolution and sampling rate. A signal- insensitive 3-D fully symmetric layout achieves a 14b level resolution by reducing a capacitor mismatch of three MDACs. The proposed supply- and temperature- insensitive current and voltage references with on-chip RC filters minimizing the effect of switching noise are implemented with off-chip C filters. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates a measured DNL and INL within 0.81LSB and 2.83LSB, at 14b, respectively. The ADC shows a maximum SNDR of 64dB and 61dB and a maximum SFDR of 71dB and 70dB at 120MS/s and 150MS/s, respectively. The ADC with an active die area of $2.0mm^2$ consumes 140mW at 150MS/s and 1.2V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.1
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• pp.14-21
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• 2011

A 10b 500MS/s $0.13{\mu}m$ CMOS ADC is proposed for 4G wireless communication systems such as a LTE-Advanced and SDR The ADC employs a calibration-free single-channel folding architecture for low power consumption and high speed conversion rate. In order to overcome the disadvantage of high folding rate, at the fine 7b ADC, a cascaded folding-interpolating technique is proposed. Further, a folding amplifier with the folded cascode output stage is also discussed in the block of folding bus, to improve the bandwidth limitation and voltage gain by parasitic capacitances. The chip has been fabricated with $0.13{\mu}m$ 1P6M CMOS technology, the effective chip area is $1.5mm^2$. The measured results of INL and DNL are within 2.95LSB and l.24LSB at 10b resolution, respectively. The SNDR is 54.8dB and SFDR is 63.4dBc when the input frequency is 9.27MHz at sampling frequency of 500MHz. The ADC consumes 150mW($300{\mu}W/MS/s$) including peripheral circuits at 500MS/s and 1.2V(1.5V) power supply.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.12
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• pp.184-193
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• 2012

In this paper, a 5-bit 2-GS/s 2-way time interleaved pipeline ADC for high-speed serial link receiver is demonstrated. Implemented as a current-mode amplifier, the stage ADC simultaneously processes the tracking and residue amplification to achieve higher sampling rate. In addition, each stage incorporates a built-in 1-tap FIR equalizer, reducing inter-symbol-interference (ISI）without an extra digital post-processing. The ADC is designed in a 110nm CMOS technology. It comsumes 91mW from a 1.2-V supply. The area excluding the memory block is $0.58{\times}0.42mm^2$. Simulation results show that when equalizer is enabled, the ADC achieves SNDR of 25.2dB and ENOB of 3.9bits at 2.0GS/s sample rate for a Nyquist input signal. When the equalizer is disengaged, SNDR is 26.0dB for 20MHz-1.0GHz input signal, and the ENOB of 4.0bits.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.5 s.347
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• pp.54-63
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• 2006

This work proposes a 14b 100MS/s 0.18um CMOS ADC with optimized resolution, conversion speed, die area, and power dissipation to obtain the performance required in the fourth-generation mobile communication systems. The 3-stage pipeline ADC, whose optimized architecture is analyzed and verified with behavioral model simulations, employs a wide-band low-noise SHA to achieve a 14b level ENOB at the Nyquist input frequency, 3-D fully symmetric layout techniques to minimize capacitor mismatch in two MDACs, and a back-end 6b flash ADC based on open-loop offset sampling and interpolation to obtain 6b accuracy and small chip area at 100MS/s. The prototype ADC implemented in a 0.18um CMOS process shows the measured DNL and INL of maximum 1.03LSB and 5.47LSB, respectively. The ADC demonstrates a maximum SNDR and SFDR of 59dB and 72dB, respectively, and a power consumption of 145mW at 100MS/s and 1.8V. The occupied active die area is $3.4mm^2$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.88-90
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• 2012

This paper describes a 10-bit 10-MS/s asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) with a rail-to-rail input range. The proposed SAR ADC consists of a capacitor digital-analog converter (DAC), a SAR logic and a comparator. To reduce the frequency of an external clock, the internal clock which is asynchronously generated by the SAR logic and the comparator is used. The time-domain comparator with a offset calibration technique is used to achieve a high resolution. To reduce the power consumption and area, a split capacitor-based differential DAC is used. The designed asynchronous SAR ADC is fabricated by using a 0.18 um CMOS process, and the active area is $420{\times}140{\mu}m^2$. It consumes the power of 0.818 mW with a 1.8 V supply and the FoM is 91.8 fJ/conversion-step.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.13-20
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• 2008

In this paper, an 1.8V 12-bit 10MSPS CMOS A/D converter (ADC) is described. The architecture of the proposed ADC is based on a folding and interpolation using an even folding technique. For the purpose of improving SNR, cascaded-folding cascaded-interpolation technique, distributed track and hold are adapted. Further, a digital encoder algorithm is proposed for efficient digital process. The chip has been fabricated with $0.18{\mu}m$ 1-poly 4-metal n-well CMOS technology. The effective chip area is $2000{\mu}m{\times}1100{\mu}m$ and it consumes about 250mW at 1.8V power supply. The measured SNDR is about 46dB at 10MHz sampling frequency.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.26-32
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• 2017

This paper presents a low power and high resolution incremental delta-sigma ADC that utilizes a passive integrator instead of an opamp-based active integrator. Opamp is a power-hungry block that involves tight design tradeoffs. To avoid the use of active integrator, the s-domain characteristic of an active integrator is first analyzed. Based on the analysis, an active integrator with low gain design is proposed as an alternative design method. To save power even more aggressively, a passive integrator with no static current is proposed. A 1st order single-bit incremental delta-sigma ADC using the proposed passive integrator is implemented in a 65nm CMOS process. Transistor-level simulation shows that the ADC consumes only 0.6uW under 1.2V supply while achieving SNDR of 71dB with 22kHz bandwidth. The estimated total power consumption including digital filter is 6.25uW, and resulting power efficiency is on a par with state-of-the-art A/D converters.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.189-197
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• 2014

This work proposes a 12b 100 MS/s $0.11{\mu}m$ CMOS three-step hybrid pipeline ADC for high-speed communication and mobile display systems requiring high resolution, low power, and small size. The first stage based on time-interleaved dual-channel SAR ADCs properly handles the Nyquist-rate input without a dedicated SHA. An input sampling clock for each SAR ADC is synchronized to a reference clock to minimize a sampling-time mismatch between the channels. Only one residue amplifier is employed and shared in the proposed ADC for the first-stage SAR ADCs as well as the MDAC of back-end pipeline stages. The shared amplifier, in particular, reduces performance degradation caused by offset and gain mismatches between two channels of the SAR ADCs. Two separate reference voltages relieve a reference disturbance due to the different operating frequencies of the front-end SAR ADCs and the back-end pipeline stages. The prototype ADC in a $0.11{\mu}m$ CMOS shows the measured DNL and INL within 0.38 LSB and 1.21 LSB, respectively. The ADC occupies an active die area of $1.34mm^2$ and consumes 25.3 mW with a maximum SNDR and SFDR of 60.2 dB and 69.5 dB, respectively, at 1.1 V and 100 MS/s.

• Journal of the Korean Society of Radiology
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• v.10 no.7
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• pp.545-550
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• 2016

The purpose of this study is to improve the mapping between functional image and conventional image by using rectangular FOV technique. Diffusion weighted imaging which is widely used for stroke was acquired by reducing the FOV and compared each Apparent Diffusion Coefficient(ADC). As a result, there is no significant difference of each ADC value in one-way-anova analysis and post-hoc analysis. Thus, Mismatching problem may be improved by matching the FOV with rectangular FOV technique because there is no difference in ADC values.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.4A
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• pp.439-446
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• 2004

This paper describes high speed and low power design techniques for an 8-bit 500MSamples/s CMOS 2-step ADC. Instead of the conventional closed-loop architecture, the newly proposed ADC adopts open-loop architecture and uses a reset-switch to reduce loading time in an environment of big parasitic-capacitances of mux-array. An analog-latch is also used to reduce power consumption. Simulation result shows that the ADC has the SNDR of 46.91㏈ with a input frequency of 103MHz at 500Msample/s and consumes 203㎽ with a 1.8V single power supply. The chip is designed with a 0.18mm 1-poly 6-metal CMOS technology and occupies active area of 760${\mu}{\textrm}{m}$*800${\mu}{\textrm}{m}$.