Serious troubles may occur in electromagnetic equipments due to electrostatic discharge (ESD). The number of the damaging incidents are significantly increasing with the increased use of integrated semiconductor elements with loer operation pwoer. In order to examine the phenomena theoretically, this paper anlyzes properties of the transient electromagnetic fields rdiated by ESD. A new model is presented using the Rompe-weizel formula for the spark resistance. The numerical results of ESD fields are compared with the experimental data that were given by wilson-Ma.

In this paper, the input impedance and efficiency of rectangulr microstip patch antenna located inside a rectangular wavegudie is calculated by using the cavity model and the mode excited by te patch antenna which is modeled as an equivanlent surface magnetic current on the conducting plate. Measured return losses of a rectangular microstrip patch antenna tuned at 5.93 GHz in the free space and inside the retangular waveguide are compared and found to be in good agreement with calculated results.

This study was conducte dto fabricate 2GHz circulator using Ca,Sn substituted UIG(yttrium iron garnet)ceramics. When the electric, magnetic and microwave properties were measured in Ca, Sn substituted YIG, the measured perimittivity and perfmeability in microwave frequencies were 16.25, 0.8964. For $Y_{2.4}$C $a_{0.3}$A $n_{0.3}$F $e_{3.5}$A $l_{1.5}$ $O_{12}$ garnet ceramics sintered at 1400.deg. C, the ferrimagnetic resonance line width (.DELTA.H) at 10GHz was 53 Oe and saturation magnetization was 375G. The strip-line circulator was simulated with 3-D FEM (finite element method) software and designed at the center frequency of 2GHz. The fabricated strip-line junction circulator using above YIG ceramics had insertion loss of 1.271dB, return loss of 23.843dB, isolation of 21.751dB at the center frequency 1.855GHz.z.z.z.z.z.z.

The design procedure for direct coupled combline filter with tapped line in/out was summarized on Ku-band satellite frequency downconverter for stellite application. We calculated the resonator dimensions, spacing between successive resonators, ground plane spacing and tapping position of in/output lines in accordance with the given procedure. Partitions wer eemployed between adjacent resonators by inserting irises to improve filter response characteristis. The designed filter was manufactued with aluminum alloy package to reduce mass, and resonators wer machined from the filter body and in/output lines wer fixed on resonators with epoxy to survive in vibration conditon during launch.

A new CAD-compatible non-quasi-static (NQS) MOS transient model is presented. A new type of weighted residual method, the collcoatin method, is adopted to obtian an approximate ordinary differntial equation from the continuity eqation. Contrasting to the conventional NQS models, the new model can directly include the variatin of the depletion charge and the derived transient current sare expressed with only physically meaningful variables. The new model predicts transient behaviors reasonably well in the calculation including cutoff regions where the depletion charge rapidly changes.

This study presents the first experimental data for the impact of hot-carrier degradtion on the performance of CMOS folded-cascode op-amps. A folded-cascode op-amp which has an NMOS input pair has been designed and fabricated using a 0.8.mu.m single-poly, double-metal CMOS process. After high voltage stress, the degradtion of perfomrance parameters such as open-metal CMOS process. After high voltage stress, the degradation of performance parameters such as open-loop voltage gain, unity-gain frequency and phase margin has been analized and physically explaniend in terms of hot carrier degradation.

The TMA gas sensors are fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. The hall effect measurement and AES analysis are carried out to investigate the effects of the sputtering gases and dopants which effect on the electrical resistivity and sensitivity to TMA gas. We measure the cfhanges of the surface carrier concentration, haall electron mobility, electrical resistivity, surface condition, and depth profile of the films. The ZnO-based thin film sensors sputtered in oxygen, or added with dopants showed a high sruface carrier concentration, film sensors sputtered in oxygen and doped with 4.0 wt.% $Al_{2}$O$_{3}$, 1.0 wt.% TiO$_{2}$, and 0.2 wt% v$_{2}$O$_{5}$ showed the highest surface carrier concentration of 5.952 * 10$^{20}$ cm$^{-3}$ , hall electron mobility of 176.7 cm$^{2}$/V.s, lowest electrical resistivity of 6*10$^{-5}$ .ohm.cm and highest sensitivity of 12. These results were measured at a working temperature of 300.deg. C to 8 ppm TMA gas.

An accurate extraction technique is developed to determine full euqivalent circuit parameters of Si MOSFETs using 1 set of measured S-parametes without complicated optimization process. This technique is based on the use of anlytic Z-parameters experessions for resistances and inductances and the Y-parameter ones for ntrinsic parameters. This accuracy is proved over the wide range of gate voltage by observing good agreement between measured and fitted Z-parameter equations and frequency-independent response of the extracted intrinsic parameters. Using this technique, gate voltage-dependencies of model parameters are obained in the saturation region and these results show the similar behavior to the short-channel effects expected from the device theory.

The optical lithography wit an ArF excimer laser as a light source is expected to be used in the mass production of giga-bit DRAMs which require less than 0.2.mu.m minimum feature size. In this case, the distortion of a patterned image becomes very severe, since the lithography porcess is performed at the resolution limit. Traditionally, the photomask pattern was designed and revised with trial-and-error methods, such as repeated execution of process simulators or actual process experiments which require time and effort. Ths paper describes a program which automatically finds an optimal mask pattern. The program divides the mask plane into cells with same sizes, chooses a cell randomly, changes the transparent/opaque property of the cell, and eventually genrates a mask pattern which produces required image pattern. The program was applied to real DRAM cell patterns to produce mask patterns which genertes image patterns closer to object images than original mask patterns.

A Si-channle MESFET using .delta.-doped layers was designed and the considerable enhancement of the current driving capability of the device was observed by simulation. The channel consists of double .delta.-doped layers separated by a low-doped spacer. Cariers are spilt from the .delta.-doped layers and are accumulated in the spacer. The saturation current is enhanced by the contribution of the carriers in the spacer. Among the design parameters that affect the peformance of the device, the thickness of the spacer and the ratio of the doping concentrations of the two .delta.-doped layers were studied. The spacer thickenss of 300~500.angs. and the doping ratio of 3~4 were shown to be the optimized values. The saturation current was observed to be increased by 75% compared with a bulk-channel MESFET. The performances of transconductance, output resistance, and subthreshold swing were also enhanced.

Chemical mechanical polishing (CMP) has become widely accepted for the planarization of multi-interconnect structures in semiconductor manufacturing. However, perfect planarization is not so easily ahieved because it depends on the pattern sensitivity, the large number of controllable process parameters, and the absence of a reliable process model, etc. In this paper, we realized the planarization of deposited oxide layers followed by metal (W) polishing as a replacement for tungsten etch-back process for via formation. Atomic force microscope (AFM) is used for the evaluation of pattern topography during CMP. As a result, AFM evaluation is very attractive compared to conventional methods for the measurment of planarity. mOreover, it will contribute to analyze planarization characteristics and establish CMP model.

We present a fiber laser sensor that uses a fiber grating as a strain sensor head and an end-reflector of the laser cavity. A passive wavelength. The long-period grating band-rejection filter showed a wide usable filter wavelength range of about 25 nm, and the intensity of transmitted light increased by 16% for 1nm sensor wavelength shift in trhe measurement range.

This paper investigated a new type of low voltage threshold switch (LVTS). As distinguished from the many other types of electronic threshold switches, the LvTS is ; voltage controlled, occurs at low voltages ($V_{2}$ $O_{5}$lV devices. The average low threshold voltage < $V_{LVT}$>=218 mV (standard deviation =24mV~kT/q, where T=300K), and was independent of the device area (x100) and amorphous oxide occurred in an ~22.angs. thick interphase of the V/amorphous- $V_{2}$ $O_{5}$ contacts. At $V_{LVT}$ there was a transition from an initially low conductance (OFF) state into a succession of quantized states of higher conductance (ON). The OFF state was spatically homogeneous and dominated by tunneling into the interphase. The ON state conductances were consistent with the quantized conductances of ballistic transport through a one dimensional, quantum point contact. The temeprature dependence of $V_{LVT}$, and fit of the material parameters (dielectric function, barrier energy, conductivity) to the data, showed that transport in the OFF and ON states occurred in an interphase with the characteristics of, respectively, semiconducting and metallic V $O_{2}$. The experimental results suggest that the LVTS is likely to be observed in interphases produced by a critical event associated with an inelastic transfer of energy.rgy.y.rgy.