An analysis method for the electromagnetic scattering of a tE polarized plane wave from a periodic strip grating over a grounded dielectric slab is consisered from the viewpoint of reflectio ngraing problem. The strip gratings showing bragg and off-bragg balzing phenomena at the frequency of 10GHz are designed, respectively. The strip grating structure is implemented using aluminum plate (hround conductor), paraffin(dielectric material ; .xi.$_{\gamma}$=2.24) and copper (strip conductor ; 0.08mm thickness). The experimental results (reflection power) for bragg as well as off-bragg blazing phenomenon have been compared with the theoretical results and fairly good agreements between theory and experiment have been observed.ed.

A X-band 3-stage monolithic LNA (low noise amplifier) with series feedback has been successfully desined and demonstrated by suign 0.5-$\mu\textrm{m}$ GaAs MESFET. In the design of the 3-stage LNA, the effects of series feedback to the noise figure, the gain, and the stability have been investigated ot find the optimal short stub length. As a result, the inductive series feedback topology which has 10degree short stub in the GaAs MESFET source lead, has been employed in the 1-st stage. The fabricated MMIC LNA's chip size is only 1mm$^{2}$/stage, which is smaller than the previously reported X-band MMIC input/output return losses are less than -10dB and -15dB, respectively. The noise figure (NF) is less than 2.6dB. The measured data show good agreement with the simulated values.

The crosstalk among three identical uniform coupled microstrip transmissiom lines is examined. To analyze the crosstalk, the simultaneous equations for the voltage and current waves on each transmission line are induced from the transmission line equation. The capacitance and the inductance of the line to solve the transmission line equation are calculated by the spectral domain analysis and the space domian analysis. There are three quasi-TEM modes is three microstrip transmission lines and the characteristics mode impedences in each mode are almost equal at a weak coupling state. The crosstalk among three identical microstrip transmission lines is calculated varying the frequency from 50MHz to 3GHz.

We have measured the optical properties, thickness, and energy band gap of the P $b_{1-x}$/100/L $a_{x}$100/ $Ti_{1-}$0.25x/100/ $O_{3}$ (PLT(x)) thin film prepared by the sol-gel method with varying the La concentration, x, fyom 15 nto 33 mol%. We have obtained the values from the tranmission spectrum and employed the envelope method in anayzing the spectrum. We have also performed the simulation of the transmission spectrum on the PC (personal computer) to verify the accuracy of the values 15 to 33mol%, the refractive index (at .lambda.=632.8nm) increases from 2.39 to 2.44. The extinction coefficient does not depend on the la concentration but mainly on te wavelength, and has the values between 0.2 and 0.5 at the wavelength shorter than 330nm and between 0.001 and 0.008 at the wavelength longer than 700nm. The energy band gap of the PLT (x) thin film has been obtained on the assumption of the direct band-to-band transition. It decreases from 3.28 to 3.17eV as the La concentration increases from 15 to 33 mol%. The thickness of the PLT(x) thin film has been also obtained in high accuracy by the envelope method..

A three-dimensional (3D) full-dynamic damage model for ion implantation in crystalline silicon was proposed to calculate more accurately point defect distributions and ion-implanted concentration profiles during ion implantation process. The developed model was based on the physical monte carlo approach. This model was applied to simulate B and BF2 implantation. We compared our results for damage distributions with those of the analytical kinchin-pease approach. In our result, the point defect distributions obtained by our new model are less than those of kinchin-pease approach, and the vacancy distributions differ from the interstitial distributions. The vacancy concentrations are higher than the interstitial ones before 0.8 . Rp to the silicon surface, and after the 0.8 . Rp to the silicon bulk, the interstitial concentrations are revesrsely higher than the vacancy ones.The fully-dynamic damage model for the accumulative damage during ion implantation follows all of the trajectories of both ions and recoiled silicons and, concurrently, the cumulative damage effect on the ions and the recoiled silicons are considered dynamically by introducing the distributon probability of the point defect. In addition, the self-annealing effect of the vacancy-interstitial recombination during ion implantation at room temperature is considered, which resulted in the saturation level for the damage distribution.

Low temperature activation of dopants which were doped using ion mass doping system in amorphous silicon(a-Si) thin films was investigated. With a 20.angs.-thick Ni film on top of the a-Si thin film, the activation temperature of dopants lowered to 500.deg. C. When the doping was performaed after the deposition of Ni thin film on the a-Si thin films (post-doping), the activation time was shorter than that of dopants mass, the activation time of the dopants doped by pre-doping method increased. It turned NiSi2 formation, while the decrease of activation time was mainly due to the enhancement of the NiSi2 formation by mixing of Ni and a-Si at the interface of Ni and a -Si thin during the ion doping process.

Photonic switching systems with throughput above Tbit/s are reuried to transport vast amounts of information for the coming B-ISDN. In this paper, we proposed a new time-division hybrid WDM photonic swithc architecture, the proposed basic switch module has simple configuratin consisted of frequency routers for wavelength division and cell coders and star couplers for time division. Through the comparison with other sysems in field of switching capacity, hardware complexity and cost effect of implemetnation, we proved that the proposed system is suitable for large-capacity photonic switching system.

In this paper we report the fabrication of an InGaAs metal-semiconductor-metal (MSM) photodiode(PD) which an InAlAs barrier enhancement layer that has very low dark current and high speed chracteristics. The detector using Cr/Au schottky metal fingers with 4um spacing on a large active area of 300*300um$^{2}$ offers a low dark current of 38nA at 10V, a low capacitance of 0.8pF, and a high 3-dB bandwidth of 2.4 GHz. To our knowledge, these characteristics are better than any previously published results obtained from large area InGaAs MSM PD's. The RC equivalent model and frequency domain current response model considering transit time were also used to analyze the frequency characteristic of the fabricated device.

In this paper, we psresent a new scheme to synthetically generate a HPO digital hologram for a three-dimensional image that is modelled as the horizontally stacked two-dimensional images. The proposed method transforms a lightwave field into the angular spectrum of planewaves, which enables this method to use FFT routines, rather than using numerous arithmetic calculations. Hence, this method may be able to not only lead to the dramatically less computation but provide relatively excellent performances due to the phase error-free transformation. We present sampling constraints and implementaton procedure to obtian a hololine for each image and also point out the necessity of interpolation. Simulatioj results are presented to show the comparison with the conventional method in terms of computation time and performances, including the behaviors resulting form the different selection of parameter values to be used in the interpolations.