Journal of the Korean Institute of Telematics and Electronics D (전자공학회논문지D)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A new CAD-compatible non-quasi-static MOS tansient model

새로운 CAD용 Non-Quasi-Static MOS 과도 전류 모델

  • 권대한 (고려대학교 전자공학과) ;
  • 류윤섭 (고려대학교 전자공학과) ;
  • 김기혁 (고려대학교 전자공학과) ;
  • 황성우 (고려대학교 전자공학과)
  • Published : 1997.12.01
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Abstract

A new CAD-compatible non-quasi-static (NQS) MOS transient model is presented. A new type of weighted residual method, the collcoatin method, is adopted to obtian an approximate ordinary differntial equation from the continuity eqation. Contrasting to the conventional NQS models, the new model can directly include the variatin of the depletion charge and the derived transient current sare expressed with only physically meaningful variables. The new model predicts transient behaviors reasonably well in the calculation including cutoff regions where the depletion charge rapidly changes.

Keywords