Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)
- Volume 8 Issue 6
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- Pages.727-736
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- 1995
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
A study on the fabrication and characteristics of the scaled MONOS nonvolatile memory devices for low voltage EEPROMs
저전압 EEPROM을 위한 Scaled MONOS 비휘발성 기억소자의 제작 및 특성에 관한 연구
Abstract
This paper examines the characteristics and physical properties of the scaled MONOS nonvolatile memory device for low programming voltage EEPROM. The capacitor-type MONOS memory devices with the nitride thicknesses ranging from 41.angs. to 600.angs. have been fabricated. As a result, the 5V-programmable MONOS device has been obtained with a 20ms programming time by scaling the nitride thickness to 57.angs. with a tunneling oxide thickness of 19.angs. and a blocking oxide thickness of 20.angs.. Measurement results of the quasi-static C-V curves indicate, after 10
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