Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)
- Volume 8 Issue 6
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- Pages.737-743
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- 1995
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
The characterization for the Ti-silicide of $N^+P$ junction by 2 step RTD
2단계 RTD방법에 의한 $N^+P$ 접합 티타늄 실리사이드 특성연구
Abstract
Two step RTD(Rapid Thermal Diffussion) of P into silicon wafer using tungsten halogen lamp was used to fabricated very shallow n
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