In this study, we have investigated electrical and mechanical properties of semiconducting materials for power cable caused by CNT. Specimens were made of sheet form with the four of specimens for measurement. Volume resistivity of specimens was measured by volume resistivity meter after 10 minutes in the pre-heated oven of both $23{\pm}\;1\;[^{\circ}C]\;and\;90{\pm}\;1\;[^{\circ}C]$. And stress-strain of specimens was measured by TENSOMETER 2000. A speed of measurement was 200[mm/min], ranges of stress and strain were 400[Kgf/Cm2] and 600[%]. From this experimental results, the volume resistivity had different properties because of PTC/NTC tendency at between $23[^{\circ}C]\;and\;90[^{\circ}C]$. Also volume resistivity was low by increasing the content of CNT. It means that a small amount of CNT has a excellent electrical properties. And stress was increased, while strain was decreased by increasing the content of CNT. Thus, we could know that a small amount of CNT has a excellent electrical and mechanical oroperties.

The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.

The properties of tunable dielectric materials on RF frequency band are important high tunability and low loss for RF variable devices, variable capacitor, phased array antenna and other components application. Various composite of BST(barium strontium titanate) ratio combined with other non-electrical active oxide ceramics have been formulated for such uses. We present the tunable properties and Curie temperature on BST thick films. The grain growth of the weight ratio of $BaTiO_3$ increased. This can be explained by the substitute $Sr^{2+}$ ion for $Ba^{2+}$ ion in the $BaTiO_3$ system. The Curie temperature was shifted to lower temperature with increasing $SrTiO_3$in the $BaTiO_3-SrTiO_3$ system, because of decreasing the lattice constant. Also, the dielectric constant, tunability and K-factor of $(Ba_xSr_{1-x})TiO_3$ at over the Curie temperature decreased, at over the $60^{\circ}C$ fixation, maximum dielectric constant at Curie temperature and hence sharper phase transformation occurred at Curie temperature. The result were interpreted as a process of internal stress relaxation resulting form the increase of $90^{\circ}$ domains induced the BST. As a result, It is concluded that over the Curie temperature, frequency response and DC field effect for the tunable properties of BST thick film are suppressed by the transition broadening. For the application of tunable devices, that the curie temperature was investigated to be increased.

An accurate constant output voltage provided by the analog memory cell may be used by the low power oscillator to generate an accurate low frequency output signal. This accurate low frequency output signal may be used to maintain long-term timing accuracy in host devices during sleep modes of operation when an external crystal is not available to provide a clock signal. Further, incorporation of the analog memory cell in the low power oscillator is fully implementable in a 0.35um Samsung standard CMOS process. Therefore, the analog memory cell incorporated into the low power oscillator avoids the previous problems in a oscillator by providing a temperature-stable, low power consumption, size-efficient method for generating an accurate reference clock signal that can be used to support long sleep mode operation.

Toward the practical applications, on operation of conduction-cooled HTS SMES at temperatures well below 40[K] should be investigated, in order to take advantage of a greater critical current density of HTS and considerably reduce the size and weight of the system. In order to take advantage of a greater critical current density of high temperature superconducting (HTS) and considerably reduce the size and weight of the system, conduction-cooled HTS superconducting magnetic energy storage (SMES) at temperatures well below 40[K] should be investigated. This work focuses on the breakdown and flashover phenomenology of dielectrics exposed in air and/or vacuum for temperatures ranging from room temperature to cryogenic temperature. Firstly, we summarize the insulation factors of the magnet for the conduction cooled HTS SMES. And Secondly a surface flashover as well as volume breakdown in air and/or vacuum with two kind insulators has been investigated. Finally, we will discuss applications for the HTS SMES including aging studies on model coils exposed in vacuum at cryogenic temperature. The commercial application of many conduction-cooled HTS magnets, however, requires refrigeration at temperatures below 40[K], in order to take advantage of a greater critical current density of HTS and reduce considerably the size and weight of the system. The magnet is driven in vacuum condition. The need to reduce the size and weight of the system has led to the consideration of the vacuum as insulating media. We are studying on the insulation factors of the magnet for HTS SMES. And we experiment the spacer configure effect in the dielectric flashover characteristics. From the results, we confirm that our research established basic information in the insulation design of the magnet.

A new method on the evaluation of insulation oil was proposed. Terahertz time-domain spectroscopy (THz-TDS) was applied to investigate the properties of the insulating oil. For the diagnostics of oil degradation, three kinds of oils have been analyzed by THz-TDS. The degraded oil showed different optical and electrical constants compared with a new one. Generally, the power absorption coefficient, the refractive index, the dielectric constant and loss $tan{\delta}$ of the oil increase as the aging of insulating oil proceed. And the characteristics of two kind of insulation oil, 1-4 and 7-4, was compared in terahertz spectral region. Difference in refractive index and complex dielectric constant has been observed between the samples. The results of this study suggest that THz-TDS is a promising new means for evaluating degradation and identification of insulating oil.

This paper presents the effect of driving waveform for piezoelectric bend mode inkjet printhead with optimized mechanical design. Experimental and theoretical studies on the applied driving waveform versus jetting characteristics were performed. The inkjet head has been designed to maximize the droplet velocity, minimize voltage response of the actuator and optimize the firing frequency to eject ink droplet. The head design was carried out by using mechanical simulation. The printhead has been fabricated with Si(100) and SOI wafers by MEMS process and silicon direct bonding method. To investigate how performance of the piezoelectric ceramic actuator influences on droplet diameter and droplet velocity, the method of stroboscopy was used. Also we observed the movement characteristics of PZT actuator with LDV(Laser Doppler Vibrometer) system, oscilloscope and dynamic signal analyzer. Missing nozzles caused by bubbles in chamber were monitored by their resonance frequency. Using the water based ink of viscosity of 4.8 cps and surface tension of 0.025 N/m, it is possible to eject stable droplets up to 20 kHz, 4.4 m/s and above 8 pl at the different applied driving waveforms.