We have proposed and fabricated a new poly-Si TFT employing air-cavities at the edges of gate oxide in order to reduce the vertical electric field induced near the drain due to low dielectric constant of air. Air-cavity has been successfully fabricated by employing the wet etching of gate oxide and APCVD (Atmospheric pressure chemical vapor deposition) oxide deposition. Our experimental results show that the leakage current of the proposed TFT is considerably reduced by the factor of 10 and threshold voltage shift under high gate bias is also reduced because the carrier injection into gate insulator over the drain depletion region is suppressed.

We attempted to fabricate polyurethane derivatives (PU-CN, PU-DCM) LB films by using LB method. Also, we investigated the monolayer behavior at the air-water interface by surface pressure-area (${\pi}$-A) isotherms. The surface morphologies and the physicochemical properties of LB films were investigated by atomic force microscopy(AFM) and UV-vis spectroscopy, respectively. And, the electrical properties of polyurethane derivatives LB films were investigated by using the conductivity and the dielectric constant. In the surface morphologies, physicochemical and electrical properties of polyurethane derivatives LB films, the properties is different as to the polyurethane derivatives, it is considered that this phenomena could be described by the difference of lumophore pendant which was adhered at PU main chain.

The(1-x) MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics were fabricated by the conventional mixed oxide method. The structural and microwave dielectric properties were investigated by XRD, SEM, EDS and network analyzer. The sintering temperature and time were 1275$^{\circ}C$~135$0^{\circ}C$ and 2hours, respectively. In the XRD results of 0.96MgTiO$_3$-0.04SrTiO$_3$ceramics, the perovskite structure of SrTiO$_3$and ilmenite structure of MgTiO$_3$phase were coexisted. The dielectric constant($\varepsilon$(sub)${\gamma}$) and temperature coefficient of resonant frequency($\tau$(sub)f) were increased with addition of SrTiO$_3$. In thie case of 0.96MgTiO$_3$-0.04SrTiO$_3$ ceramics sintered at 13$25^{\circ}C$, the dielectric constant, quality factor(Q) and temperature coefficient of resonant frequency($\tau$(sub)f) were 20.13, 7956(at 7.27GHz), and +1.76ppm/$^{\circ}C$, respectively.

Presently, typical maximum probe spacing of soil resistivity survey(Wenners 4 pin method) is 20 m in case of 154 K substation grounding design of KEPCO. This paper examined the effects of maximum probe spacing of wenner method on the equivalent soil modeling and the accuracy of grounding resistance measurement by comparing the calculated FOP(Fall-of-Potential) curves of various soil models with the measured one at 154kV H substation. The comparison results showed that the inaccurate estimation of deep soil resistivity, which is caused from the short probe spacing of soil resistivity survey, can produce large errors on measurement of grounding resistance. In this paper a quantitative analysis of FOP at H substation has been presented.

This paper describes an advanced measuring method and precise evaluation of the ground resistance for the grounding system of energized substations and power equipments. A grounding system of substations consists of all interconnected grounding connections of grounded conductors, neutral ground wires, underground conductors of distribution lines, cable shields, grounding terminals of equipments, and etc. It is very difficult to measure the accurate ground resistance of the grounding terminals of equipments, and etc. It is very difficult to measure the accurate ground resistance of the grounding system of high voltage energized substations because of harmonic components caused by switched power supplies or overloads. The conventional fall-of-potential method may be subject to big error if stray ground currents and potentials are present. In this work, to improve the precision in measurements of the ground resistance by eliminating the effects of harmonic components and stray currents and potentials, the investigations of the ground resistance measurement by using a low pass filter in a model energized grounding system were conducted. The accuracy of ground resistance mesurements was evaluated as a function of the ratio of the test signal to noise (S/N). The errors due to the proposed ground resistance measurement method were decreased with increasing S/N and were less than 5[%] as S/N is 10. The proposed ground resistance measurement method appears to be considerably more accurate than the conventional fall-of -potential method. It is allows cancellation of the parasitic resistance of energized grounding systems, to employ the measurement method that allows cancellation of the parasitic effects due to other circulating ground currents and ground potential rises in practical situations.

This paper describes an application of the on line partial discharge measurement method in operating transformer. In the operating transformer, the partial discharge signal may be superimposed by radio intereference voltage(RIV) and pulse shaped noise signals generated by external corona. The partial discharge quantity showed about 3,800pC due to very high sinusoidal interferences at the measuring impedance terminal of the transformer bushing tap. In order to reject these noises, this paper applied RIV filter, band-pass filters and noise gating method. The resulting measuring sensitivity was improved from 3,800pC to 160pC.

The information of the ion composition in plasma applications is required to characterize a plasma. A better understanding of ion species composition ratio and its spacial distribution, etc. is thus necessary in plasma-related processes, such as thin film deposition, plasma-based ion implantation, semiconductor processing, and so on. In this research, a compact ion mass analyzer that is based on magnetic sector analyzer was developed and its operational characteristics were studied in nitrogen plasma.

In the electron-gun of CRT, the Mo-tip FEA was employed as cold cathode in order to replace the conventional thermal cathode. The Mo-tip FEA was designed and fabricated according to CRT specification and mounted on the electron-gun. It was known that fabricated cold cathode electron-gun showed better performance in terms of maximum emission current and switch-on time when compared with the ones of thermal cathode electron-gun, but some geometrical structures in the inside of electron-gun must be changed to reduce the gate leakage current. Finally, the potential applicability was guaranteed by means of operating the 19 inch-sized LG-color CRT using the fabricated cold cathode electron-gun.

Failure modes of Mo-tip FEA were investigated in detail as a preliminary study for the application of Mo-tip FEA to the CRT electron-gun as a cold cathode. It was identified that the destruction of Mo-tip FEA was originated from reflowing of arc-current during the spot-knocking process followed by secondary arc between gate electrode and cathode substrate. In order to prevent Mo-tip FEA from destruction due to arc-current, two kinds of methods were suggested, that is one is to provide the by-pass of the reflow current and the other is to install a current limiter in the path of gate connection line.

This paper presents the principle and fabrication of a novel micro mass spectrometer and emission test of hot electron for ionization. A micro mass spectrometer consists of a micro ion source and a micro ion separator. The micro ion source consists of a hot filament and grid electrodes. Electrons emitted from a hot filament are to ionize some sample molecules. The ions are accelerated to an ion detector by an electric field. Mass can be analyzed by using the time of fight depending on the mass-to-charge ratio. The current of hot electron emission from the hot filament is measured for various input voltages.