In this paper, we described the characterization of High-Tc Superconducting(HTS) microstrip antenna using non-radiating edge feeding technique and reported the microwave properties of HTS antennas with temperature. To do this, we prepared the $YBa_2Cu_3O_{7-x}$ superconducting thin film on MgO substrate using pulse-laser deposition techniques. The HTS microstrip antenna using non-radiating feeding technique was fabricated using chemical wet-etching. Then it was compared with identical antenna patterned with evaporated gold. The diverse measured results have been reported in terms of the input impedance, resonant frequency and return loss. In additional, at around the critical temperature, the effect of kinetic inductance which affect the resonant characteristic of the HTS microstrip antenna was reported.

The $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$ single crystals were grown by the chemical transport reaction method using iodine as a transport agent. The $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$single crystals were crystallized into a defect chalcopyrite structure. The optical energy gap of the $CdAl_2S_4 and CdAl_2S_4 : Co^{2+}$ single crystals was found to be 3.377 eV and 2.924 eV, respectively, at 300 K. Blue emission with peaks in 456nm~466nm at 280K was observed in the $CdAl_2S_4$ single crystal. Optical absorption and emission peaks due to impurities in the $CdAl_2S_4 Co^{2+}$ single crystal were observed and described as originating from the electron transition between energy levels of the $Co^{2+} ion sited at the Td symmetry point.

Hydrogen-sensing behaviors of Pd- and Pt-SiC Schottky diodes, fabricated on the same SiC substrate, have been systematically compared and analyzed as a function of hydrogen concentration and temperature by I-V and$\DeltaI-t$ methods under steady-state and transient conditions. The effects of hydrogen adsorption on the device parameters such as the barrier height are investigated. The significant differences in their hydrogen sensing characteristics have been examined in terms of sensitivity limit, linearity of response, response rate, and response time. For the investigated temperature range, Pd-SiC Schottky diode shows better performance for H2 detection than Pt-SiC Schottky diode under the same testing conditions. The physical and chemical mechanisms responsible for hydrogen detection are discussed. Analysis of the steady-state reaction kinetics using I-V method confirmed that the atomistic hydrogen process is responsible for the barrier height change in the diodes.

The mechanical and electrical properties of pressed and annealed $\beta-SiC-TiB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_2O_3+Y_2O_3$. Phase analysis of composites by XRD revealed $\alpha$-SiC(6H), TiB2, and (Al5Y3O12). Reaction between Al2O3 and $Y_2O_3$ formed YAG but the relative density decreased with increasing $Al_2O_3+Y_2O_3$ contents. The Flexural strength showed the value of 458.9 MPa for composites added with 4 wt% $Al_2O_3+Y_2O_3$ additives at room temperatures. Owing to crack deflection and crack bridging, the fracture toughness showed 6.2, 6.0 and 6.6 MPa.m1/2 for composites added with 4, 8 and 12 wt% Al2O3+Y2O3 additives respectively at room temperature. The resistance temperature coefficient showed the value of $3.6\times10^{-3},\; 2.9\times10^{-3}\; and\; 3.0\times10^{-3} /^{\circ}C$$^{\circ}C$ for composite added with 4, 8 and 12 wt% $Al_2O_3+Y_2O_3$additives respectively at room temperature. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) in the temperature range of $25^{\circ}C\; to\; 700^{\circ}$.

In order to improve the reliability of XLPE cables, it is necessary to understand the mechanism of electrical and water tree degradation. Especially, electrical tree initiation and propagation are important in XLPE cable insulation. This paper deals with the changes of electrical properties of XLPE cable insulation with electrical tree degradation. To understand the electrical properties of XLPE insulation, specimens were prepared by 22.9kV distribution cable and made in a type of block. Ogura needles having tip radius of 10${\mu}{\textrm}{m}$ were inserted into each block pieces. AC voltages of 8kV, 10kV and 12kV at 60Hz were applied to needle. We investigated the relationship between electrical properties(PD quantity, tan$\delta$ and DC current) and the growth of electrical tree. The electrical properties of the specimens were measured from initiation of tree to breakdown and their characteristics were analyzed.

This paper presents the results of performance confirmation tests for domestic 20 [Ton] transmission suspension insulators which will be widely utilized in transmission lines. The new test methods such as power arc test, steep-front-of-wave flashover voltage test, and etc. which have been only utilized for the distribution insulators were applied in transmission suspension insulators. The properties of metal and cement used in the 20 [Ton] transmission insulators were also evaluated by the various analysis techniques. Based on the results, we evaluated the performance of the transmission suspension insulators.

This paper offer fundamental materials about Partial Discharge(PD) detection by electromagnetic waves. All spectrum data-usually used as grape- can be used as numbers. And then the average of background noise spectrum strength was made. Average value subtract from every data. Then average value appeared, graphed. The graph was compared with the magnitude of charge. The shape of changes is similar, and the change of electric field strength could be seen in one sight. When the magnitude of charge is over than 100[pC], antenna can detect partial discharge. So this method will be very useful to diagnosis of insulation. It the performance of the antenna used in this experiment is analyzed, good results can be obtained.

The fiber Fabry-Perot interferometric(FFPI) sensor is well known in the field of industrial diagnosis due to its outstanding properties such as tiny size, simple and rugged structure, and easy interrogation. As other fiber interferometric sensors, it also suffers from ambiguous output caused by highly periodic feature in its optical transfer function. In most cases, the ambiguity leads to relatively short dynamic operating range and long processing time during power-on reset, which limits its application to some specific fields requiring very high resolution. In this paper a method based on double sensing scheme was proposed to overcome the above difficulty. By employing a fringe selection auxiliary FFPI sensor the original FFPI sensor can identify its true position on the phase domain. The performance test with 10mm FFPI sensor and a thermocouple temperature sensor for reference shows wide dynamic range 0-900$\ell$ keeping a reasonable resolution of 0.1$\ell$ over the entire range.

The plasma surface treatment, using hydrogen gas, of the silicon wafer was investigated as a pretreatment for the application to silicon-on-insulator (SOI) wafers using the silicon direct bonding technique. The chemical reactions of hydrogen plasma with surfaces were used for both the surface activation and the removal of surface contaminants. As a result of exposure of silicon wafer to the plasma, an active oxide layer was formed on the surface, which was rendered hydrophilic. The surface roughness and morphology were estimated as functions of plasma exposing time as well as of power. The surface became smoother with decreased incident hydrogen ion flux by reducing plasma exposing time and power. This process was very effective to reduce the carbon contaminants on the silicon surface, which was responsible for a high initial surface energy. The initial surface energy measured by the crack propagation method was 506 mJ/m2, which was up to about three times higher than that of a conventional RCA cleaning method.