In order to analyze the degradation process of epoxy/glass fiber for outdoor condition, FRP laminate was exposed to high temperature. Then, the degradation process was evaluated by comparing contact angle, surface potential, surface resistivity, and XPS. The experimental results showed that the amount of weight loss, contact angle, surface potential and surface resistivity increased up to 200 $^{\circ}C$ as a function of temperature. These phenomena show the existence of hydrophobic surface. With the change to the hydrophobic surface and the electrical potential and resistivity on FRP surface increased. In XPS to analyze surface chemical structures, the increased hydrophobicity in thermal increase of unsaturated double bond in carbon chains. Aslo, thermal treatment caused the discoloration on the point of treated surface. These phenomena were attributed to the generations of ether group.

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

Ozone has been widely applied to many industrial fields because of its strong oxidation power, Therefore, the studies have been carried out for the methods on an effective and high concentration ozone generation. The silent or surface discharge type ozone generators have been mainly used for high concentration ozone generation in many fields of applications. But these two types of ozone generators have shortcomings to be improved. In this study, the ozone generator which improved the shortcomings of above ozone generators was proposed and fabricated for the high concentration ozone generation. And the proposed ozone generator could generate the surface and barrier discharge simultaneously. For this purpose, a mesh type discharge electrode was proposed and studied as a function of the widths output maximum ozone concentration of 2.96[vol%] was obtained at 5.6[kV], 830[mA], for 0.3[mm] width and 0.8[mm] vacancy of the mesh electrode and gap spacing of 0.65[mm] respectively.

As the data rate between chip-to-chip gets high, the skin effect and load of pins deteriorate noise margin. With these, noise disturbances on the bus channel make it difficult for receiver circuits to read the data signal. This paper has proposed a new pre-emphasis driver circuit which achieves wide noise margin by enlarging the signal voltage range during data transition. When data is transferred from a memory chip to a controller, the output boltage of the driver circuit reaches the final values through the intermediate voltage level. The proposed driver supplies more currents applicable to a packet-based memory system, because it needs no additional control signal and realizes very small area. The circuit has been designed in a 0.18 ${\mu}m$ CMOS process, and HSPICE simulation results have shown that the data rate of 1.32 Gbps be achieved. Due to its result, the proposed driver can achieved higher speed than conventional driver by 10%.

In this paper, the distribution suspension porecelain insulators which had been used for long periods in the contaminated area were evaluated. The contaminated area is close to the sea and in the high density of industries. The heavily contaminated domestic and imported insulators were investigated by using electrical characteristics, such as power-frequency dry flashover voltage, power-frequency wet, flahover voltage, and leakage current. Also, these electrical results were compared with the contaminants on the surface. From these analysis, we found that the contamination from the industrial dust, only slightly decreased flashover voltage and increased leakage current. Therefore, the electrical properties of insulators used for 30 years in the area of coast and industrial complex were not much changed.

We measured 3-dimensional images of the light emitted from plasma display panel(PDP) by using newly proposed scanned point detecting method(SPDM). The SPDM has the point detector with pinhole. The light emitted from PDP cell at the in-focus position can pass through the pinhole and be collected by detector. On the contrary, the light emitted from PDP cell at the out-of-focus positions is focused on the front of or the behind of the pinhole. We could analyze the characteristic of 3-dimensional light emission distribution by SPDM. From 3-dimensional measurement of 828[nm], the efficient design of PDP cell, the importance of opening ration, and the relations between BUS electrode position and discharge intensity are obtained. Also, the relationship between discharge characteristics and sustain electrode structures in AC-PDP are studied by measuring luminance, current, and discharge voltage.

Recently, the construction of gas insulated substation(GIS)s has been increased in Korea. But, the whole quantity of the VTs which were used in GIS has been imported. Under the circumstance that $SF_6$ gas power apparatus are being developed up to 800kV rating in Korea, the development of EＨＶ　$SF_6$ gas VT is essential for localizing the power apparatus. As for EHV VT, destructive ferroresonance can be generated due to the combination of capacitiances between poles of circuit breaker, ground capacitance of bus and nonlinear excitation property of VT core. But the theoretical analysis about ferroresonance has not been fully achieved in Korea. Therefore, in this paper the authors would like to contribute for localizing EHV $SF_6$ gas VT by developing the diagram of ferroresonance zone according to the parameters of the circuit and the saturable reactor.