The mechanical and electrical properties of the pressureless sintered SiC-TiB$_2$electroconductive ceramic composites were investigated as functions of the transition metal of TiB$_2$. The result of phase analysis for the SiC-TiB$_2$ composites by XRD revealed $\alpha$-SiC(6H), TiB$_2$, and YAG(Al$_{5}$Y$_3$O$_{12}$) crystal phases. The relative density showed the lowest 84.8% for the SiC-TiB$_2$composites added with 39vol.%TiB$_2$. Owing to crack deflection, crack bridging and YAG of fracture toughness mechanism, the fracture toughness showed the highest value of 7.8 MPa.m$^{1}$2/ for composites added with 39vol.%TiB$_2$under a pressureless annealing at room temperature. The electrical resistivity of the SiC-27vol.%TiB$_2$ composites was negative temperature coefficient resistance(NTCR), and the electrical resistivity of the besides SiC-27vol.%TiB$_2$composites was all positive temperature coefficient resistance(PCTR) in the temperature range of $25^{\circ}C$ to $700^{\circ}C$.EX>.

The resistances of metal2 contact to metall and poly Si are checked by various RF etch conditions in terms of pre-cleaning. The changes of resistance are evaluated by statistical analysis method(SAS) for the AC bias power, coil power and RF target. The contact area on poly Si is shown by TEM image and the distributions of contact resistance according to ar etch target and RTP are investigated. The RTP groups have larger variations than normal RF etch targets. When the RF etch target becomes lower and coil power becomes higher, the resistances of metal2 contact to metals and poly Si have lower contact resistance. But the condition of AC bias power did not satisfied low meta12 contacts resistance for metall and poly Si simultaneously. The R-square of ststistical analysis was 0.98 for resistances of meta12 contact to poly Si and 0.87 for resistances of meta12 contact to metall.

This paper describes an effect of a single- and a quadruple-lightning impulse currents on electrical characteristics of ZnO blocks, and an expert system to diagnose arrestor deterioration. To deduce the parameters needed for diagnosing arrester deterioration, an accelerate deterioration teat is carried out. In the experiment, leakage current components are measured. Also, wave height distribution of the leakage current according to the progress of arrester deterioration is analyzed. From the experimental results, the wave height distribution of the leakage current showed conspicuous difference even in an immaterial leakage current increase. Therefore, the use of wave height distribution of the leakage current in deterioration diagnostic technique makes more accurate diagnosis than the conventional method by using only a leakage currant value. Finally, the expert system based on the experimental results is developed and the system can diagnose arrestor deterioration by measuring the leakage current and its wade height distribution.

The pulsed Power system has been widely used to many applications, such as E/P(Electrostatic Precipitator), DeNOx/DeSOx power system, often generator, etc. In this paper, we study EMTP analysis and characteristics of critical voltage and load in impedance on various electrode length of pulse corona. To obtain a stable pulse voltage, we designed a compact pulse generator switched MOSFET and tested their characteristics by adjusting electrode length and pulse repetition. As a re sult, critical voltage of pulse corona and load impedance on increasing electrode length were decreased. These results indicate we can control critical voltage of pulse corona and suppress arc discharging between two electrodes.

The main hazard leading to breakdown in GIS(Gas Insulated Switchgear) comes from free conducting particles, which can cross between tee electrodes and cause dielectric failure under the influence of the electric field. Bouncing height of the particle can be an important factor to evaluate the possibility of breakdown occurrence. In this paper, how to estimate, outside a GIS, the bouncing height of the particle was newly suggested when GIS is in service. Both experimental results using 362 kV test chamber and computer simulation results on estimating the height were presented and compared with each other.

This paper presents a high-resolution capactive microaccelerometer using branched finger electrodes with high-amplitude sense voltage. From the fabricated microacceleromcter, the total noise is obtained as 9 $\mu\textrm{g}$/√Hz at the sense voltage of 16.5V, while the conventional microaccelerometers have shown the noire level of 25~800 $\mu\textrm{g}$/√Hz. We reduce the mechanical noise level of the microaccelerometer by increasing the proof-class based on deep RIE process of an SOI wafer. We reduce the electrical noise level by increasing the amplitude of AC sense voltage. The nonlinearity problem caused by the high-amplitude sense volage has been solved by a new electrode design of branched finger type, resulting in self force-balancing effects for the enhanced linearity and bandwidth. The fabricated microaccelerometer shows the electrical noise of 2.4 $\mu\textrm{g}$/√Hz at the sense voltage of 16.5V, which is an order of magnitude reduction of the electrical noise of 24.3 $\mu\textrm{g}$/√Hz measured at 0.9V. For the sense voltage higher than 2V, the electrical noise of the microaccelerometer is lower than the voltage-independent mechanical noise of 11 $\mu\textrm{g}$/√Hz. Total noise, composed of the electrical noise and the mechanical noire, has been measured as 9 $\mu\textrm{g}$/√Hz at the sense voltage of 16.5V, which is 31% of the total noise of 28.6 $\mu\textrm{g}$/√Hz at the sense voltage 0.9V. The self force-balancing effect in the blanched finger electrodes increases the stiffness of the microaccelerometer from 1.1N/m to 1.61N/m as the sense voltage increases from 0V to 17.8V, thereby generating additional stiffness at the rate of 0.0016$\pm$0.0008 N/m/V$^2$.

In this paper, the surface modification effect of self-assembled monolayer(SAM) of 1-dodecanethiol [$CH_3$($CH_2$)$_{11}$SH] used as an anti-adhesive film in micromolding process was studied. Monolayers of 1-dodecanethiol[$CH_3$(CH$_2$)$_{11}$SH] were obtained by immersing a metal place in pure 1-dodecanethiol. SAM film on the nickel plate has been examined by using X-ray photoelectron spectroscopy(XPS). The focus has been placed on S-Ni bonding. From the XPS analysis, sulfur atoms were detected from the SAM film as a chemical composition of S-Ni. In order to measure an adhesion force of the SAM-coated nickel surface, atomic force microscopy(AFM) was used in force-distance mode, which whows the micro-adhesive force on solid surface. It was shown that adhesion forces measured from the SAM-coated nickel surface and the Ni surface without SAM coating were 3.52nN and 5.32nN, respectively. In order to investigate the effect of SAM coating on the surface foughness the replica in demolding process, hot embossing experiments were performed using a SAM-coated nickel master and a nickel master without SAM coating. Surface roughness of replica from the SAM-coated master showed 25nm and that of replica from master without SAM coating was 35nm. The smoother surface roughness of the replica from the SAM-coated, master is believed to result from reduction in the adhesion forces.ces.