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전기의세계

The Korean Institute of Electrical Engineers

  • Monthly
  • /
  • 1598-4613(pISSN)

Volume 30 Issue 10

  1. 성기계 603
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    본고의 내용은 다음과 같다. 1. 적산열량계의 개발 2. 열량적산 이론 3. 전자식 적산열량의 동작원리 4. 적산열량계의 설치효과 5. 난방비 계산방법
  2. 김준현 611
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    본고의 내용은 다음과 같다. 1. 뇌현상 1.1 뇌운 1.2 뇌방전 2. 방호대책 2.1 대증적 방법
  3. Akira, Ishizaki 618
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    Since the oil crisis in 1973, Japanese industrial fields have put many energy conservation schemes into practice and obtained fruitful results. This artical deals with the latest trend in Japan of energy conservation in electrical equipment and introduces some examples of new systems.
  4. 신종원;백용현 639
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    PVC is a kind of electric insulation polymer. But we get some deteriorations in electrical characteristics of the PVC, when it is used on the radioactive field. In order to find out the cause of the deterioration, we investigate the surface-resistance, volume-resistance, dielectric constant and dielectric loss angle of the soft and hard PVC which is irradiated by the Co$^{60}$ .gamma. radioactivity. From the experiment, we can conclude the followings 1. Radio-activity proof characteristic in the soft PVC is stronger than in the hard PVC. 2. The resistance of PVC which is irradiated by the radio-activity decrease exponentially. 3. The dielectric constant and the dielectric loss angle of PVC irradiated by Co$^{60}$ .gamma.ray reach maximum value in first few time.
  5. 성영권;성만영;김일수;박찬원 645
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    A technique has been proposed for fabricating a submicron channel vertical V-groove JFET using standard photolithography. A finite element numerical simulation of the V-groove JFET operation was performed using a FORTRAN progrma run on a Cyber-174 computer. The numerical simulation predicts pentode like common source output characteristics for the p$^{+}$n Vertical V-groove JFET with maximum transconductance representing approximately 6 precent of the zero bias drain conductance value and markedly high drain conductance at large drain voltages. An increase in the acceptor concentration of the V-groove JFET gate was observed to cause a significant increase in the transconductance of the device. Therefore, as above mentioned, this paper is study on the analysis of a Vertical V-groove Junction Field Effect Transistor with Finite Element Method.d.
  6. 송진수 655
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    The concentrating solar module with high concentration ratio(320)has been studied.in this paper. The solar module was composed of the EMVJ solar cell, (Fresnel Lens-DCPC)concentrator and heat sink, and was measured by using the PASTF system. The experimental result and the result analysis for the individual item of the module were as f ollows; (1) The conversion efficiency of the module was 8.3%. (2) The optical efficiency of the concentrator was 46.5% (DCPC; 84.8%, Fresnel Lens; 54.8%). (3) The thermal loss of the solar cell was 4.9%. And methods for the further improvement of the concentrating solar module efficiency have been suggested.