• Title/Summary/Keyword: voltage margin

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A Study on the Characteristics of Novel Pseudo-TN IPS Mode LC Cell (새로운 Pseudo-TN IPS 모드 액정 셀에 대한 특성 해석 연구)

  • 윤형진;윤석인;윤상호;원태영
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.8
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    • pp.59-65
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    • 2004
  • In this paper, we propose Pseudo-TN IPS mde(Pseudo-Twisted Nematic In-Plane Switching mode) based on IT(In-plane switching Twisted nematic) mode that increase contrast ratio from improving optical characteristics and analyze the characteristics of Pseudo-TN IPS uude. Optical transmittance is 25% higher for the PTN-IPS mode than for the IT mode. Because aperture ratio of the PIN-IPS is increased. And the control of Liquid Crystal for adjusting optical transmittance is more easier than IT mode, because optical transmittance variation is linear with applying voltage. Contrast ratio is 8% lower for the PTN-IPS mode than for the IT mode in the horizontal direction. But, Contrast ratio is 20% higher for the PTN-IPS mode than for the IT mode in the vertical direction. It has also cell gap margin and many benefits of IT mode, this may be used very well in the future LC Cell design.

Technical Evaluation of Engineering Model of Ultra-Small Transmitter Mounted on Sweetpotato Hornworm

  • Nakajima, Isao;Muraki, Yoshiya;Mitsuhashi, Kokuryo;Juzoji, Hiroshi;Yagi, Yukako
    • Journal of Multimedia Information System
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    • v.9 no.2
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    • pp.145-154
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    • 2022
  • The authors are making a prototype flexible board of a radio-frequency transmitter for measuring an electromyogram (EMG) of a flying moth and plan to apply for an experimental station license from the Ministry of Internal Affairs and Communications of Japan in the summer of 2022. The goal is to create a continuous low-dose exposure standard that incorporates scientific and physiological functional assessments to replace the current standard based on lethal dose 50. This paper describes the technical evaluation of the hardware. The signal of a bipolar EMG electrode is amplified by an operational amplifier. This potential is added to a voltage-controlled crystal oscillator (27 MHz, bandwidth: 4 kHz), frequency-converted, and transmitted from an antenna about 10 cm long (diameter: 0.03 mm). The power source is a 1.55-V wristwatch battery that has a total weight of about 0.3 g (one dry battery and analog circuit) and an expected operating time of 20 minutes. The output power is -7 dBm and the effective isotropic radiated power is -40 dBm. The signal is received by a dual-whip antenna (2.15 dBi) at a distance of about 100 m from the moth. The link margin of the communication circuit is above 30 dB within 100 m. The concepts of this hardware and the measurement data are presented in this paper. This will be the first biological data transmission from a moth with an official license. In future, this telemetry system will improve the detection of physiological abnormalities of moths.

A 10b 250MS/s $1.8mm^2$ 85mW 0.13um CMOS ADC Based on High-Accuracy Integrated Capacitors (높은 정확도를 가진 집적 커페시터 기반의 10비트 250MS/s $1.8mm^2$ 85mW 0.13un CMOS A/D 변환기)

  • Sa, Doo-Hwan;Choi, Hee-Cheol;Kim, Young-Lok;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.11 s.353
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    • pp.58-68
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    • 2006
  • This work proposes a 10b 250MS/s $1.8mm^2$ 85mW 0.13um CMOS A/D Converter (ADC) for high-performance integrated systems such as next-generation DTV and WLAN simultaneously requiring low voltage, low power, and small area at high speed. The proposed 3-stage pipeline ADC minimizes chip area and power dissipation at the target resolution and sampling rate. The input SHA maintains 10b resolution with either gate-bootstrapped sampling switches or nominal CMOS sampling switches. The SHA and two MDACs based on a conventional 2-stage amplifier employ optimized trans-conductance ratios of two amplifier stages to achieve the required DC gain, bandwidth, and phase margin. The proposed signal insensitive 3-D fully symmetric capacitor layout reduces the device mismatch of two MDACs. The low-noise on-chip current and voltage references can choose optional off-chip voltage references. The prototype ADC is implemented in a 0.13um 1P8M CMOS process. The measured DNL and INL are within 0.24LSB and 0.35LSB while the ADC shows a maximum SNDR of 54dB and 48dB and a maximum SFDR of 67dB and 61dB at 200MS/s and 250MS/s, respectively. The ADC with an active die area of $1.8mm^2$ consumes 85mW at 250MS/s at a 1.2V supply.

A Calibration-Free 14b 70MS/s 0.13um CMOS Pipeline A/D Converter with High-Matching 3-D Symmetric Capacitors (높은 정확도의 3차원 대칭 커패시터를 가진 보정기법을 사용하지 않는 14비트 70MS/s 0.13um CMOS 파이프라인 A/D 변환기)

  • Moon, Kyoung-Jun;Lee, Kyung-Hoon;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.12 s.354
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    • pp.55-64
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    • 2006
  • This work proposes a calibration-free 14b 70MS/s 0.13um CMOS ADC for high-performance integrated systems such as WLAN and high-definition video systems simultaneously requiring high resolution, low power, and small size at high speed. The proposed ADC employs signal insensitive 3-D fully symmetric layout techniques in two MDACs for high matching accuracy without any calibration. A three-stage pipeline architecture minimizes power consumption and chip area at the target resolution and sampling rate. The input SHA with a controlled trans-conductance ratio of two amplifier stages simultaneously achieves high gain and high phase margin with gate-bootstrapped sampling switches for 14b input accuracy at the Nyquist frequency. A back-end sub-ranging flash ADC with open-loop offset cancellation and interpolation achieves 6b accuracy at 70MS/s. Low-noise current and voltage references are employed on chip with optional off-chip reference voltages. The prototype ADC implemented in a 0.13um CMOS is based on a 0.35um minimum channel length for 2.5V applications. The measured DNL and INL are within 0.65LSB and l.80LSB, respectively. The prototype ADC shows maximum SNDR and SFDR of 66dB and 81dB and a power consumption of 235mW at 70MS/s. The active die area is $3.3mm^2$.

A Design of Power Management IC for CCD Image Sensor (CCD 이미지 센서용 Power Management IC 설계)

  • Koo, Yong-Seo;Lee, Kang-Yoon;Ha, Jae-Hwan;Yang, Yil-Suk
    • Journal of IKEEE
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    • v.13 no.4
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    • pp.63-68
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    • 2009
  • The power management integrated circuit(PMIC) for CCD image sensor is presented in this study. A CCD image sensor is very sensitive against temperature. The temperature, that is heat, is generally generated by the PMIC with low efficiency. Since the generated heat influences performance of CCD image sensor, it should be minimized by using a PMIC which has a high efficiency. In order to develop the PMIC with high efficiency, the input stage is designed with synchronous type step down DC-DC converter. The operating range of the converter is from 5V to 15V and the converter is controlled using PWM method. The PWM control circuit consists of a saw-tooth generator, a band-gap reference circuit, an error amplifier and a comparator circuit. The saw-tooth generator is designed with 1.2MHz oscillation frequency. The comparator is designed with the two stages OP Amp. And the error amplifier has 40dB DC gain and $77^{\circ}$ phase margin. The output of the step down converter is connected to input stage of the charge pump. The output of the charge pump is connected to input of the LDO which is the output stage of the PMIC. Finally, the PMIC, based on the PWM control circuit and the charge pump and the LDO, has output voltage of 15V, -7.5V, 3.3V and 5V. The PMIC is designed with a 0.35um process.

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Development of Acid Resistance Velocity Sensor for Analyzing Acidic Fluid Flow Characteristics (산성 용액 내 유속 측정을 위한 내산성 센서 개발)

  • Choi, Gyujin;Yoon, Jinwon;Yu, Sangseok
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.40 no.10
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    • pp.629-636
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    • 2016
  • This study presents the development of an acid resistance velocity sensor that is used for measuring velocity inside a copper sulfate plating bath. First, researchers investigated the acid resistance coating to confirm the suitability of the anti-acid sensor in a very corrosive environment. Then, researchers applied signal processing methods to reduce noise and amplify the signal. Next, researchers applied a pressure-resistive sensor with an operation amplifier (Op Amp) and low-pass filter with high impedance to match the output voltage of a commercial flowmeter. Lastly, this study compared three low-pass filters (Bessel, Butterworth and Chebyshev) to select the appropriate signal process circuit. The results show 0.0128, 0.0023, and 5.06% of the mean square error, respectively. The Butterworth filter yielded more precise results when compared to a commercial flowmeter. The acid resistive sensor is capable of measuring velocities ranging from 2 to 6 m/s with a 2.7% margin of error.

Design of Low Power 4th order ΣΔ Modulator with Single Reconfigurable Amplifier (재구성가능 연산증폭기를 사용한 저전력 4차 델타-시그마 변조기 설계)

  • Sung, Jae-Hyeon;Lee, Dong-Hyun;Yoon, Kwang Sub
    • Journal of the Institute of Electronics and Information Engineers
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    • v.54 no.5
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    • pp.24-32
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    • 2017
  • In this paper, a low power 4th order delta-sigma modulator was designed with a high resolution of 12 bits or more for the biological signal processing. Using time-interleaving technique, 4th order delta-sigma modulator was designed with one operational amplifier. So power consumption can be reduced to 1/4 than a conventional structure. To operate stably in the big difference between the two capacitor for kT/C noise and chip size, the variable-stage amplifier was designed. In the first phase and second phase, the operational amplifier is operating in a 2-stage. In the third and fourth phase, the operational amplifier is operating in a 1-stage. This was significantly improved the stability of the modulator because the phase margin exists within 60~90deg. The proposed delta-sigma modulator is designed in a standard $0.18{\mu}m$ CMOS n-well 1 poly 6 Metal technology and dissipates the power of $354{\mu}W$ with supply voltage of 1.8V. The ENOB of 11.8bit and SNDR of 72.8dB at 250Hz input frequency and 256kHz sampling frequency. From measurement results FOM1 is calculated to 49.6pJ/step and FOM2 is calculated to 154.5dB.

Low-power Lattice Wave Digital Filter Design Using CPL (CPL을 이용한 저전력 격자 웨이브 디지털 필터의 설계)

  • 김대연;이영중;정진균;정항근
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.10
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    • pp.39-50
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    • 1998
  • Wide-band sharp-transition filters are widely used in applications such as wireless CODEC design or medical systems. Since these filters suffer from large sensitivity and roundoff noise, large word-length is required for the VLSI implementation, which increases the hardware size and the power consumption of the chip. In this paper, a low-power implementation technique for digital filters with wide-band sharp-transition characteristics is proposed using CPL (Complementary Pass-Transistor Logic), LWDF (Lattice Wave Digital Filter) and a modified DIFIR (Decomposed & Interpolated FIR) algorithm. To reduce the short-circuit current component in CPL circuits due to threshold voltage reduction through the pass transistor, three different approaches can be used: cross-coupled PMOS latch, PMOS body biasing and weak PMOS latch. Of the three, the cross-coupled PMOS latch approach is the most realistic solution when the noise margin as well as the energy-delay product is considered. To optimize CPL transistor size with insight, the empirical formulas for the delay and energy consumption in the basic structure of CPL circuits were derived from the simulation results. In addition, the filter coefficients are encoded using CSD (Canonic Signed Digit) format and optimized by a coefficient quantization program. The hardware cost is minimized further by a modified DIFIR algorithm. Simulation result shows that the proposed method can achieve about 38% reductions in power consumption compared with the conventional method.

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A Re-configurable 0.8V 10b 60MS/s 19.2mW 0.13um CMOS ADC Operating down to 0.5V (0.5V까지 재구성 가능한 0.8V 10비트 60MS/s 19.2mW 0.13um CMOS A/D 변환기)

  • Lee, Se-Won;Yoo, Si-Wook;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.3
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    • pp.60-68
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    • 2008
  • This work describes a re-configurable 10MS/s to 100MS/s, low-power 10b two-step pipeline ADC operating at a power supply from 0.5V to 1.2V. MOS transistors with a low-threshold voltage are employed partially in the input sampling switches and differential pair of the SHA and MDAC for a proper signal swing margin at a 0.5V supply. The integrated adjustable current reference optimizes the static and dynamic performance of amplifiers at 10b accuracy with a wide range of supply voltages. A signal-isolated layout improves the capacitor mismatch of the MDAC while a switched-bias power-reduction technique reduces the power dissipation of comparators in the flash ADCs. The prototype ADC in a 0.13um CMOS process demonstrates the measured DNL and INL within 0.35LSB and 0.49LSB. The ADC with an active die area of $0.98mm^2$ shows a maximum SNDR and SFDR of 56.0dB and 69.6dB, respectively, and a power consumption of 19.2mW at a nominal condition of 0.8V and 60MS/s.

A 12b 130MS/s 108mW $1.8mm^2$ 0.18um CMOS ADC for High-Quality Video Systems (고화질 영상 시스템 응용을 위한 12비트 130MS/s 108mW $1.8mm^2$ 0.18um CMOS A/D 변환기)

  • Han, Jae-Yeol;Kim, Young-Ju;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.3
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    • pp.77-85
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    • 2008
  • This work proposes a 12b 130MS/s 108mW $1.8mm^2$ 0.18um CMOS ADC for high-quality video systems such as TFT-LCD displays and digital TVs requiring simultaneously high resolution, low power, and small size at high speed. The proposed ADC optimizes power consumption and chip area at the target resolution and sampling rate based on a three-step pipeline architecture. The input SHA with gate-bootstrapped sampling switches and a properly controlled trans-conductance ratio of two amplifier stages achieves a high gain and phase margin for 12b input accuracy at the Nyquist frequency. A signal-insensitive 3D-fully symmetric layout reduces a capacitor and device mismatch of two MDACs. The proposed supply- and temperature- insensitive current and voltage references are implemented on chip with a small number of transistors. The prototype ADC in a 0.18um 1P6M CMOS technology demonstrates a measured DNL and INL within 0.69LSB and 2.12LSB, respectively. The ADC shows a maximum SNDR of 53dB and 51dB and a maximum SFDR of 68dB and 66dB at 120MS/s and 130MS/s, respectively. The ADC with an active die area of $1.8mm^2$ consumes 108mW at 130MS/s and 1.8V.