• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.189-197
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• 2014

This work proposes a 12b 100 MS/s $0.11{\mu}m$ CMOS three-step hybrid pipeline ADC for high-speed communication and mobile display systems requiring high resolution, low power, and small size. The first stage based on time-interleaved dual-channel SAR ADCs properly handles the Nyquist-rate input without a dedicated SHA. An input sampling clock for each SAR ADC is synchronized to a reference clock to minimize a sampling-time mismatch between the channels. Only one residue amplifier is employed and shared in the proposed ADC for the first-stage SAR ADCs as well as the MDAC of back-end pipeline stages. The shared amplifier, in particular, reduces performance degradation caused by offset and gain mismatches between two channels of the SAR ADCs. Two separate reference voltages relieve a reference disturbance due to the different operating frequencies of the front-end SAR ADCs and the back-end pipeline stages. The prototype ADC in a $0.11{\mu}m$ CMOS shows the measured DNL and INL within 0.38 LSB and 1.21 LSB, respectively. The ADC occupies an active die area of $1.34mm^2$ and consumes 25.3 mW with a maximum SNDR and SFDR of 60.2 dB and 69.5 dB, respectively, at 1.1 V and 100 MS/s.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.3
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• pp.60-68
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• 2009

This work proposes a 10b 200MS/s 65nm CMOS ADC for high-definition video systems such as HDTV requiring high resolution and fast operating speed simultaneously. The proposed ADC employs a four-step pipeline architecture to minimize power consumption and chip area. The input SHA based on four capacitors reduces the output signal range from $1.4V_{p-p}$ to $1.0V_{p-p}$ considering high input signal levels at a low supply voltage of 1.2V. The proposed three-stage amplifiers in the input SHA and MDAC1 overcome the low output resistance problem as commonly observed in a 65nm CMOS process. The proposed multipath frequency-compensation technique enables the conventional RNMC based three-stage amplifiers to achieve a stable operation at a high sampling rate of 200MS/s. The conventional switched-bias power-reduction technique in the sub-ranging flash ADCs further reduces power consumption while the reference generator integrated on chip with optional off-chip reference voltages allows versatile system a locations. The prototype ADC in a 65nm CMOS technology demonstrates a measured DNL and INL within 0.19LSB and 0.61LSB, respectively. The ADC shows a maximum SNDR of 54.BdB and 52.4dB and a maximum SFDR of 72.9dB and 64.8dB at 150MS/S and 200MS/s, respectively. The proposed ADC occupies an active die area of $0.76mm^2$ and consumes 75.6mW at a 1.2V supply voltage.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.1
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• pp.8-16
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• 2020

In this paper, a single-bit 2nd-order delta-sigma modulator with the architecture of cascaded-of-integrator feedforward (CIFF) is proposed for column-parallel analog-to-digital converter (ADC) array used in a low noise CMOS image sensor. The proposed modulator implements two switched capacitor integrators and a single-bit comparator within only 10-㎛ column-pitch for column-parallel ADC array. Also, peripheral circuits for driving all column modulators include a non-overlapping clock generator and a bias circuit. The proposed delta-sigma modulator has been implemented in a 110-nm CMOS process. It achieves 88.1-dB signal-to-noise-and-distortion ratio (SNDR), 88.6-dB spurious-free dynamic range (SFDR), and 14.3-bit effective-number-of-bits (ENOB) with an oversampling ratio (OSR) of 418 for 12-kHz bandwidth. The area and power consumption of the delta-sigma modulator are 970×10 ㎛2 and 248 ㎼, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38A no.4
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• pp.303-309
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• 2013

A low power 6-bit flash ADC that uses an input voltage range detection algorithm is described. An input voltage level detector circuit has been designed to overcome the disadvantages of the flash ADC which consume most of the dynamic power dissipation due to comparators array. In this work, four digital input voltage range detectors are employed and each input voltage range detector generates the specific clock signal only if the input voltage falls between two adjacent reference voltages applied to the detector. The specific clock signal generated by the detector is applied to turn the corresponding latched comparators on and the rest of the comparators off. This ADC consumes 68.82mW with a single power supply of 1.2V and achieves 4.9 effective number of bits for input frequency up to 1MHz at 500 MS/s. Therefore it results in 4.75pJ/step of Figure of Merit (FoM). The chip is fabricated in 0.13-um CMOS process.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.4
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• pp.613-618
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• 2015

This paper proposed a low power CMOS Flash-SAR A/D converter which consists of a Flash A/D converter for 2 most significant bits and a SAR A/D converter with capacitor D/A converter for 8 least significant bits. Employment of a Flash A/D converter allows the proposed circuit to enhance the conversion speed. The SAR A/D converter with capacitor D/A converter provides a low power dissipation. The proposed A/D converter consumes $136{\mu}W$ with a power supply of 1V under a $0.18{\mu}m$ CMOS process and achieves 9.16 effective number of bits for sampling frequency up to 2MHz. Therefore it results in 120fJ/step of Figure of Merit (FoM).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.58-68
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• 2006

This work proposes a 10b 250MS/s $1.8mm^2$ 85mW 0.13um CMOS A/D Converter (ADC) for high-performance integrated systems such as next-generation DTV and WLAN simultaneously requiring low voltage, low power, and small area at high speed. The proposed 3-stage pipeline ADC minimizes chip area and power dissipation at the target resolution and sampling rate. The input SHA maintains 10b resolution with either gate-bootstrapped sampling switches or nominal CMOS sampling switches. The SHA and two MDACs based on a conventional 2-stage amplifier employ optimized trans-conductance ratios of two amplifier stages to achieve the required DC gain, bandwidth, and phase margin. The proposed signal insensitive 3-D fully symmetric capacitor layout reduces the device mismatch of two MDACs. The low-noise on-chip current and voltage references can choose optional off-chip voltage references. The prototype ADC is implemented in a 0.13um 1P8M CMOS process. The measured DNL and INL are within 0.24LSB and 0.35LSB while the ADC shows a maximum SNDR of 54dB and 48dB and a maximum SFDR of 67dB and 61dB at 200MS/s and 250MS/s, respectively. The ADC with an active die area of $1.8mm^2$ consumes 85mW at 250MS/s at a 1.2V supply.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.857-860
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• 1991

This paper describes a High-Speed 8-bit Current-Mode BiCMOS A/D Converter. The characteristics of this A/D Converter are as fellows. First, as ADC is operating in current-mode we can obtain the properties of increase of converting speed, low noise, and wideband. Second, the properties of high switching speed in bipolar transistor and of high packing density, low power consumption in MOS trnsistor are combined. Finally we reduce chip area by designing it with subranging mode and improve the converting speed by performing subtraction directly, which doesn't need D/A convertings, using current switching element. This converter is composed of two 4-bit ADC, current soure array which provides signal and reference current, current comparator and encoding network.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.11
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• pp.9-16
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• 2005

This paper proposes a programmable PLL (phase locked loop) based clock generator supporting a wide-range-frequency input and output for high performance and low power SoC with multiple clock frequencies domains. The propose system reduces the locking time and obtains a wide range operation frequency by using a dual-charge pumps scheme. For low power operation of a chip, the locking processing circuits of the proposed PLL doesn't be working in the standby mode but the locking data are retained by the DAC. Also, a tracking ADC is designed for the fast relocking operation after stand-by mode exit. The programmable output frequency selection's circuit are designed for supporting a optimized DFS operation according to job tasks. The proposed PLL-based clock system has a relock time range of $0.85{\mu}sec{\sim}1.3{\mu}sec$($24\~26$cycle) with 2.3V power supply, which is fabricated on $0.35{\mu}m$ CMOS Process. At power-down mode, PLL power saves more than $95\%$ of locking mode. Also, the PLL using programmable divider has a wide locking range ($81MHz\~556MHz$) for various clock domains on a multiple IPs system.

• IEIE Transactions on Smart Processing and Computing
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• v.5 no.1
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• pp.10-16
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• 2016

In this paper, a design for a fully digital voltage sensor using a 32-nm fin-type field-effect transistor (FinFET) is presented. A new characteristic of the double gate p-type FinFET (p-FinFET) is examined and proven appropriate for sensing voltage variations. On the basis of this characteristic, a novel technique for designing low-power voltage-to-time converters is presented. Then, we develop a digital voltage sensor with a voltage range of 0.7 to 1.1V at a 50-mV resolution. The performance of the proposed sensor is evaluated under a range of voltages and process variations using Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, and the sensor is proven capable of operating under ultra-low power consumption, high linearity, and fairly high-frequency conditions (i.e., 100 MHz).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.69-75
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• 2004

This work proposes an 8b 220 MS/s 230 mW 3-stage pipeline CMOS ADC with on-chip filers for temperature- and power- insensitive voltage references. The proposed RC low-pass filters improve switching noise performance and reduce reference settling time at heavy R & C loads without conventional off-chip large bypass capacitors. The prototype ABC fabricated in a 0.25 um CMOS occupies the active die area of 2.25 $\textrm{mm}^2$ and shows the measured DNL and INL of maximum 0.43 LSB and 0.82 LSB, respectively. The ADC maintains the SNDR of 43 dB and 41 dB up to the 110 MHz input at 200 MS/s and 220 MS/s, respectively, while the SNDR at the 500 MHz input is degraded as much as only 3 dB than the SNDR at the 110 MHz input.