[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.5573/IEIESPC.2016.5.1.10

Low-Power Fully Digital Voltage Sensor using 32-nm FinFETs

Nguyen, H.V. (Hardware Design Group, Viettel R&D Institute)
Kim, Youngmin (Department of Computer Engineering, Kwangwoon University)

Publication Information

IEIE Transactions on Smart Processing and Computing / v.5, no.1, 2016 , pp. 10-16 More about this Journal

Abstract

In this paper, a design for a fully digital voltage sensor using a 32-nm fin-type field-effect transistor (FinFET) is presented. A new characteristic of the double gate p-type FinFET (p-FinFET) is examined and proven appropriate for sensing voltage variations. On the basis of this characteristic, a novel technique for designing low-power voltage-to-time converters is presented. Then, we develop a digital voltage sensor with a voltage range of 0.7 to 1.1V at a 50-mV resolution. The performance of the proposed sensor is evaluated under a range of voltages and process variations using Simulation Program with Integrated Circuit Emphasis (SPICE) simulations, and the sensor is proven capable of operating under ultra-low power consumption, high linearity, and fairly high-frequency conditions (i.e., 100 MHz).

Keywords

FinFET; Voltage sensor; Voltage-to-time converter; ADC; Voltage variation; Low power;

Citations & Related Records

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