• 한국전자통신학회논문지
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• 제8권1호
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• pp.105-111
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• 2013

선형적인 읽기와 쓰기 특성을 가지고 있는 승자전취메커니즘 방식의 아날로그 메모리를 구현하였다. 메모리의 읽기 동작은 연상메모리의 최적 함수 선택을 위하여 절대값 회로와 승자전취메커니즘 회로가 이용된다. 본 연구에서는 병렬의 고속 쓰기와 읽기 동작뿐만 아니라 고집적을 가능하게 하는 시스템 구성이 실현된다. 복수의 메모리 셀의 구현이 더 높은 집적도와 고속의 쓰기 읽기를 위하여 구현된다. 실시간 인식을 위하여 본 연구에서 사용된 함수는 이상적이며 메커니즘의 시뮬레이션을 위하여 MOSIS의 $1.2{\mu}$ 더블폴리 CMOS 공정 파라미터를 사용하였다.

• ETRI Journal
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• 제35권5호
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• pp.797-807
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• 2013

In this paper, an input receiver with a hysteresis characteristic that can work at voltage levels between 0.9 V and 5 V is proposed. The input receiver can be used as a wide voltage range Schmitt trigger also. At the same time, reliable circuit operation is ensured. According to the research findings, this is the first time a wide voltage range Schmitt trigger is being reported. The proposed circuit is compared with previously reported input receivers, and it is shown that the circuit has better noise immunity. The proposed input receiver ends the need for a separate Schmitt trigger and input buffer. The frequency of operation is also higher than that of the previously reported receiver. The circuit is simulated using HSPICE at 0.35-${\mu}m$ standard thin oxide technology. Monte Carlo analysis is conducted at different process conditions, showing that the proposed circuit works well for different process conditions at different voltage levels of operation. A noise impulse of ($V_{CC}/2$) magnitude is added to the input voltage to show that the receiver receives the correct logic level even in the presence of noise. Here, $V_{CC}$ is the fixed voltage supply of 3.3 V.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.419-422
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• 2004

A sensing scheme for current-mode magneto-resistance random access memory (MRAM) with a 1T1MTJ cell structure is proposed. Magnetic tunnel junction (MTJ) resistance, which is HIGH or LOW, is converted to different cell currents during READ operation. The cell current is then amplified to be evaluated by the reference cell current. In this scheme, conventional bit line sense amplifiers are not required and the operation is less sensitive to voltage noise than that of voltage-mode circuit is. It has been confirmed with HSPICE simulations using a 0.35-${\mu}m$ 2-poly 4-metal CMOS technology.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.797-800
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• 2005

In this paper, the designed 10-bit current steering data driving circuit consists of bias circuits, shift registers, data and line latches, level shifters, and 10-bit D/A converters. This data driving circuit can improve image quality, driving speed, and can reduce process error, DNL error, and glitch noise. To reduce current cells, the 10-bit D/A converter was designed 3+3+4 hybrid type. As a result 49 current cells are decreased. The transient analysis shows that currents flows a few of mA in data line and the currents have 1024 gray levels of current values. Total circuits are designed for 10 ${\mu}s$ speed. Thus the designed 10-bit current steering data driving circuit can be usable in HDTV/XGA AMOLED displays. These data driving circuits are designed for 0.35 ${\mu}m$ CMOS process at 3.3 V and 18 V supply voltage and simulated with HSPICE..

• IEIE Transactions on Smart Processing and Computing
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• 제5권3호
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• pp.207-214
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• 2016

Optical communication systems are rapidly spread following increases in data traffic. In this work, a 32-Gb/s inductorless output buffer circuit with adjustable pre-emphasis is proposed. The proposed circuit consists of an output buffer circuit and an emphasis circuit. The emphasis circuit emphasizes the high frequency components and adds the characteristics of the output buffer circuit. We proposed a design method using a small-signal equivalent-circuit model and designed the compensation characteristics with a 65-nm CMOS process in detail using HSPICE simulation. We also realized adjustable emphasis characteristics by controlling the voltage. To confirm the advantages of the proposed circuit and the design method, we fabricated an output buffer IC with adjustable pre-emphasis. We measured the jitter and eye height with a 32-Gb/s input using the IC. Measurement results of double-emphasis showed that the jitter was 14% lower, and the eye height was 59% larger than single-emphasis, indicating that our proposed configuration can be applied to the design of an output buffer circuit for higher operation speed.

• ETRI Journal
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• 제39권4호
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• pp.582-591
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• 2017

To address the wire complexity problem in large-scale globally asynchronous, locally synchronous systems, a current-mode ternary encoding scheme was devised for a two-phase asynchronous protocol. However, for data transmission through a very long wire, few studies have been conducted on reducing the long propagation delay in current-mode circuits. Hence, this paper proposes a current steering logic (CSL) that is able to minimize the long delay for the devised current-mode ternary encoding scheme. The CSL creates pulse signals that charge or discharge the output signal in advance for a short period of time, and as a result, helps prevent a slack in the current signals. The encoder and decoder circuits employing the CSL are implemented using $0.25-{\mu}m$ CMOS technology. The results of an HSPICE simulation show that the normal and optimal mode operations of the CSL achieve a delay reduction of 11.8% and 28.1%, respectively, when compared to the original scheme for a 10-mm wire. They also reduce the power-delay product by 9.6% and 22.5%, respectively, at a data rate of 100 Mb/s for the same wire length.

• ETRI Journal
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• 제36권1호
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• pp.89-98
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• 2014

The integration of digital circuits has a tight relation with the scaling down of silicon technology. The continuous scaling down of the feature size of CMOS devices enters the nanoscale, which results in such destructive effects as short channel effects. Consequently, efforts to replace silicon technology with efficient substitutes have been made. The carbon nanotube field-effect transistor (CNTFET) is one of the most promising replacements for this purpose because of its essential characteristics. Various digital CNTFET-based circuits, such as standard logic cells, have been designed and the results demonstrate improvements in the delay and energy consumption of these circuits. In this paper, a new CNTFET-based 5-input XOR gate based on a novel design method is proposed and simulated using the HSPICE tool based on the compact SPICE model for the CNTFET at the 32-nm technology node. The proposed method leads to improvements in performance and device count compared to the conventional CMOS-style design.

• 조명전기설비학회논문지
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• 제25권2호
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• pp.80-86
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• 2011

This paper presents an integrated variable amplitude high voltage pulse generation circuit with low power and small size for driving industrial piezoelectric printer heads. To solve the problems of large size and power overhead of conventional pulse generators that usually assembled with multiple high-cost discrete ICs on a PCB board, we have designed a new integrated circuit (IC) chip. Since all the functions are integrated on to a single-chip it can achieve low cost and control the high-voltage output pulse with variable amplitudes as well. It can also digitally control the rising and falling times of an output high voltage pulse by using programmable RC time control of the output buffer. The proposed circuit has been designed and simulatedd in a 180[nm] Bipolar-CMOS-DMOS (BCD) technology using HSPICE and Cadence Virtuoso Tools. The proposed single-chip pulse generation circuit is suitable for use in industrial printer heads requiring a variable high voltage driving capability.

• 한국정보처리학회논문지
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• 제7권7호
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• pp.2179-2187
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• 2000

This paper provides a heuristic analysis technique which determines an optimal number of V\ulcorner/V\ulcorner pads meeting allowable Simultaneous Switching Noise(SN) budget, early in the design phase. Until now, in determining the number of V\ulcorner/V\ulcorner pads, designers had to simulate packaging models case by case in the design phase or roughly allocate the power/ground pins in an inaccurate way according to typical design rules. However, due to the high density and frequency trends of IC technologies, the V\ulcorner/V\ulcorner pads allocation method can affect an adverse effect on IC operations, which requires more accurate and efficient methods be devised. Thus, this paper proposes an analytic V\ulcorner/V\ulcorner pads calculation method that gives a practical help for packaging designs early in the design phase. The proposed method is applied to a design example of a 1/8x208 pin plastic quad flat package (PQFP) and the results are verified through simulation using HSPICE.

• 한국정보통신학회논문지
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• 제13권11호
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• pp.2378-2384
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• 2009

본 논문에서는 $1{\mu}s$이하의 아주 짧은 위상고정시간을 가지는 새로운 방식의 위상고정루프(Phase Locked Loop, PLL)를 제안하였다. 지연고정루프(Delay Locked Loop, DLL)를 사용하여 입력 주파수를 체배 시켜 위상 고정 루프가 보다 더 높은 루프 대역폭을 가지도록 하여 위상고정이 짧은 시간에 일어나도록 설계하였다. 제안한 위상고정루프는 기존의 위상고정루프와 지연고정루프, 주파수 체배기로 구성되었으며 전원전압은 1.8V를 사용했다. $0.18{\mu}m$ CMOS 공정으로 Hspice를 이용해서 시뮬레이션 했으며 채널 변환 시 위상고정 시간은 $0.9{\mu}s$이다. 입력과 출력 주파수는 각각 162.5MHz, 2.6GHz이다.