Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

Sensing scheme of current-mode MRAM

전류 방식 MRAM의 데이터 감지 기법

  • Kim Bumsoo (Integrated Circuit Design Laboratory Kookmin University) ;
  • Cho Chung-Hyung (Integrated Circuit Design Laboratory Kookmin University) ;
  • Hwang Won Seok (Integrated Circuit Design Laboratory Kookmin University) ;
  • Ko Ju Hyun (Integrated Circuit Design Laboratory Kookmin University) ;
  • Kim Dong Myong (Integrated Circuit Design Laboratory Kookmin University) ;
  • Min Kyeong-Sik (Integrated Circuit Design Laboratory Kookmin University) ;
  • Kim Daejeong (Integrated Circuit Design Laboratory Kookmin University)
  • 김범수 (국민대학교 전자공학부 IC설계 연구실) ;
  • 조충현 (국민대학교 전자공학부 IC설계 연구실) ;
  • 황원석 (국민대학교 전자공학부 IC설계 연구실) ;
  • 고주현 (국민대학교 전자공학부 IC설계 연구실) ;
  • 김동명 (국민대학교 전자공학부 IC설계 연구실) ;
  • 민경식 (국민대학교 전자공학부 IC설계 연구실) ;
  • 김대정 (국민대학교 전자공학부 IC설계 연구실)
  • Published : 2004.06.01
Download PDF
⟨ Previous Next ⟩

Abstract

A sensing scheme for current-mode magneto-resistance random access memory (MRAM) with a 1T1MTJ cell structure is proposed. Magnetic tunnel junction (MTJ) resistance, which is HIGH or LOW, is converted to different cell currents during READ operation. The cell current is then amplified to be evaluated by the reference cell current. In this scheme, conventional bit line sense amplifiers are not required and the operation is less sensitive to voltage noise than that of voltage-mode circuit is. It has been confirmed with HSPICE simulations using a 0.35-${\mu}m$ 2-poly 4-metal CMOS technology.

Keywords