• Journal of IKEEE
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• v.2 no.2 s.3
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• pp.309-315
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• 1998

This paper describes an 8b 52 MHz CMOS subranging analog-to-digital converter (ADC) for Integrated Services Digital Network (ISDN) applications. The proposed ADC based on the improved time-interleaved architecture removes the holding time which is typically observed in the conventional double-channel subranging ADCs to increase throughput rate. Moreover, the ADC employs the interpolation technique in the back-end subranging ADCs far residue signal processing to minimize die area and power consumption. The fabricated and measured prototype ADC in a 0.8 um n-well double-poly double-metal CMOS process typically shows a 52 MHz sampling rate at a 5 V supply voltage with 230 mW, and a 40 MHz sampling rate at a 3 V power supply with 60 mW power consumption.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.31-39
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• 2009

This paper presents the single supply power line communication(PLC) SoC ASIC with built-in analog frond-end circuit. To achieve the low power consumption along with low chip cost, this PLC SoC ASIC employs fully CMOS analog front-end(AFE) and several built-in Regulators(LDOs) powering for Core logic, ADC, DAC and IP Pad driver. The AFE includes RX of pre-amplifier, Programmable gain amplifier and 10 bit ADC and TX of 10bit Digital Analog Converter and Line driver. This PLC Soc was implemented with 0.18um 1 Poly 5 Metal CMOS process. The single power supply of 3.3V is required for the internal LDOs. The total power consumption is below 30mA at standby and 300mA at active which meets the eco-design requirement. The chips size is $3.686\;{\times}\;2.633\;mm^2$.

• Journal of Advanced Navigation Technology
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• v.12 no.6
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• pp.604-610
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• 2008

A 2.4 GHz CMOS RF front-end using for ZigBee application is described The front-end consists of a low noise amplifier and a down-mixer and uses a 2 MHz IF frequency. A common source with resistive feedback and an inductive degeneration are adopted for a low noise amplifier, and a 20 dB gain control step is digitally controlled. A passive mixer for low current consumption is employed. The RF front-end is implemented in 0.18 ${\mu}m$IP6M CMOS process. The measured performance is 4.44 dB NF and -6.5 dBm IIP3 while consuming 3.28 mA current from a 1.8 V supply.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.259-262
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• 2012

This paper describes a delay-locked loop (DLL) that generates a 64-phase clock with the operating frequency of 125MHz. The proposed DLL use a $4{\times}8$ matrix-based delay line to improve the linearity of a delay line. The output clock with 64-phase is generated by using a CMOS multiplex and a inverted-based interpolator from 32-phase clock which is the output clock of the $4{\times}8$ matrix-based delay line. The circuit for an initial phase lock, which is independent on the duty cycle ratio of the input clock, is used to prevent from the harmonic lock of a DLL. The proposed DLL is designed using a $0.18-{\mu}m$ CMOS process with a 1.8 V supply. The simulated operating frequency range is 40 MHz to 200 MHz. At the operating frequency of a 125 MHz, the worst phase error and jitter of a 64-phase clock are +11/-12 ps and 6.58 ps, respectively.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.500-505
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• 1997

Experimental amorphous photodiode is fabricated on CMOS IC using a-Si:H p-i-n structure. Amorphous photodiode is scuccessfully integrated on CMOS IC using amorphous Si produced by PECVD system. The PECVD system can deposit a-Si:H at low temperature so that photodiode can be integrated with CMOS IC structure without any process incompatibility. The fabricated amorphous photodiode has a breakdown voltage of below -20 V, a leakage current of about 1 $\mu\textrm{A}$, and turn-on voltage of 0.6~0.8 V. It is demonstrated that the photocurrent of optical signal can be turned on and off by a small voltage and the fabricated amorphous p-i-n photodiode can be used as an optical switch.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.7
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• pp.1442-1447
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• 2004

In this paper, a 6-Bit CMOS Folding and Interpolating AD Converter is presented. The converter is considered to be useful as an integrated part of a VLSI circuit handling both analog and digital signals as in the case of HDD or LAN applications. A built-in analog circuit for VLSI of a high-speed data communication requires a small chip area, low power consumption, and fast data processing. The proposed folding and interpolating AD Converter uses a very small number of comparators and interpolation resistors, which is achieved by cascading a couple of folders working in different principles. This reduced number of parts is a big advantage for a built-in AD converter design. The design is based on 0.25m double-poly 2 metal n-well CMOS process. In the simulation, with the applied 2.5V and a sampling frequency of 500MHz, the measurements are as follows: power consumption of 27mw, INL and DNL of $\pm$0.1LSB, $\pm$0.15LSB each, SNDR of 42dB with an input signal of 10MHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.412-415
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• 2015

This paper presents a MPPT(Maximum Power Point Tracking) control CMOS interface circuit for vibration energy harvesting. The proposed circuit consists of an AC-DC converter, MPPT Controller, DC-DC boost converter and PMU(Power Management Unit). The AC-DC converter rectifies the AC signals from vibration devices(PZT). MPPT controller is employed to harvest the maximum power from the PZT and increase efficiency of overall system. The DC-DC boost converter generates a boosted and regulated output at a predefined level and provides energy to load using PMU. A full-wave rectifier using active diodes is used as the AC-DC converter for high efficiency, and a schottky diode type DC-DC boost converter is used for a simple control circuitry. The proposed circuit has been designed in a 0.35um CMOS process. The chip area is $950um{\times}920um$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.6
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• pp.52-57
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• 2009

This paper presents a low-noise low-dropout linear regulator that is suitable for on-chip integration with RF transceiver ICs. In the bandgap reference, a stacked diode structure is adopted for saving silicon area as well as maintaining low output noise characteristic. Theoretical analysis for supporting the approach is also described. The linear regulator is fabricated in $0.18{\mu}m$ CMOS process. It operates with an input voltage range of 2.2 V - 5 V and provide the output voltage of 1.8 V and the output current up to 90 mA. The measured line and load regulation is 0.04%/V and 0.46%, respectively. The output noise voltage is measured to be 479 nV/$^\surd{Hz}$ and 186 nV/$^\surd{Hz}$ from 100 Hz and 1 kHz offset, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.826-832
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• 2004

A CMOS 8 bit folding and interpolating ADC for an embedded system inside VLSI is presented in this paper. This folding ADC uses the 2 stage architecture for improving of nonlinearity. repeating the folding and interpolating twice. At a proposed structure, a transistor differential pair operates on the second folder. A ADC with 2 stage architecture reduces the number of comparators and resisters. So it is possible to provide small chip size, low power consumption and high operating speed. The design technology is based on fully standard 0.25m double-Poly 2 metal n-well CMOS Process. The simulated Power consumption is 45mW with an applied voltage of 2.5V and sampling frequency of 250MHz. The INL and DNL are within <ㅆㄸㅌ>$\pm$0.2LSB, respectively. The SNDR is approximately 45dB for input frequency of 10MHz.

• Transactions on Electrical and Electronic Materials
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• v.12 no.6
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• pp.262-266
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• 2011

A simulation study of a current-mode direct current (DC)-DC boost converter is presented in this paper. This converter, with a fully-integrated power module, is implemented by using bipolar complementary metal-oxide semiconductor (BiCMOS) technology. The current-sensing circuit has an op-amp to achieve high accuracy. With the sense metal-oxide semiconductor field-effect transistor (MOSFET) in the current sensor, the sensed inductor current with the internal ramp signal can be used for feedback control. In addition, BiCMOS technology is applied to the converter, for accurate current sensing and low power consumption. The DC-DC converter is designed with a standard 0.35 ${\mu}m$ BiCMOS process. The off-chip inductor-capacitor (LC) filter is operated with an inductance of 1 mH and a capacitance of 12.5 nF. Simulation results show the high performance of the current-sensing circuit and the validity of the BiCMOS converter. The output voltage is found to be 4.1 V with a ripple ratio of 1.5% at the duty ratio of 0.3. The sensing current is measured to be within 1 mA and follows to fit the order of the aspect ratio, between sensing and power FET.